JPH0312461B2 - - Google Patents
Info
- Publication number
- JPH0312461B2 JPH0312461B2 JP57023063A JP2306382A JPH0312461B2 JP H0312461 B2 JPH0312461 B2 JP H0312461B2 JP 57023063 A JP57023063 A JP 57023063A JP 2306382 A JP2306382 A JP 2306382A JP H0312461 B2 JPH0312461 B2 JP H0312461B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- layer
- diffusion
- substrate
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H10W72/922—
-
- H10W72/983—
Landscapes
- Wire Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57023063A JPS58140134A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57023063A JPS58140134A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58140134A JPS58140134A (ja) | 1983-08-19 |
| JPH0312461B2 true JPH0312461B2 (enExample) | 1991-02-20 |
Family
ID=12099956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57023063A Granted JPS58140134A (ja) | 1982-02-16 | 1982-02-16 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58140134A (enExample) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4838101A (enExample) * | 1971-09-10 | 1973-06-05 | ||
| JPS5842271A (ja) * | 1981-09-07 | 1983-03-11 | Nec Corp | 半導体集積回路装置 |
-
1982
- 1982-02-16 JP JP57023063A patent/JPS58140134A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58140134A (ja) | 1983-08-19 |
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