JPS58140134A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58140134A
JPS58140134A JP57023063A JP2306382A JPS58140134A JP S58140134 A JPS58140134 A JP S58140134A JP 57023063 A JP57023063 A JP 57023063A JP 2306382 A JP2306382 A JP 2306382A JP S58140134 A JPS58140134 A JP S58140134A
Authority
JP
Japan
Prior art keywords
diffusion layer
substrate
layer
bonding pad
diffused layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57023063A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312461B2 (enExample
Inventor
Chiharu Ueda
植田　千春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP57023063A priority Critical patent/JPS58140134A/ja
Publication of JPS58140134A publication Critical patent/JPS58140134A/ja
Publication of JPH0312461B2 publication Critical patent/JPH0312461B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]

Landscapes

  • Wire Bonding (AREA)
JP57023063A 1982-02-16 1982-02-16 半導体装置 Granted JPS58140134A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023063A JPS58140134A (ja) 1982-02-16 1982-02-16 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023063A JPS58140134A (ja) 1982-02-16 1982-02-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS58140134A true JPS58140134A (ja) 1983-08-19
JPH0312461B2 JPH0312461B2 (enExample) 1991-02-20

Family

ID=12099956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023063A Granted JPS58140134A (ja) 1982-02-16 1982-02-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS58140134A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838101A (enExample) * 1971-09-10 1973-06-05
JPS5842271A (ja) * 1981-09-07 1983-03-11 Nec Corp 半導体集積回路装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838101A (enExample) * 1971-09-10 1973-06-05
JPS5842271A (ja) * 1981-09-07 1983-03-11 Nec Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPH0312461B2 (enExample) 1991-02-20

Similar Documents

Publication Publication Date Title
KR950007059A (ko) 집적 회로
KR960032693A (ko) 반도체장치 및 그 본딩패드 구조
JPH0358185B2 (enExample)
KR970063592A (ko) 다층 패드를 구비하는 반도체장치 및 그 제조방법
KR100374456B1 (ko) 절연 트렌치 및 이의 제조 방법
JPS58140134A (ja) 半導体装置
KR880008441A (ko) 고주파 반도체 소자용 세라믹 패키지
KR100200687B1 (ko) 새로운 패드층을 구비하는 반도체장치
EP0134692A3 (en) Multilayer semiconductor devices with embedded conductor structure
JPH0418730A (ja) 半導体装置
JPS60214561A (ja) 半導体集積回路
JPH02126665A (ja) 半導体装置
JPS63164362A (ja) 半導体装置
JP2774220B2 (ja) 半導体装置
JPH0121566Y2 (enExample)
JPS62165362A (ja) 半導体集積回路装置
JP2996346B2 (ja) Ｍｏｓ集積回路
JPS58101462A (ja) 半導体装置
JPS63258056A (ja) 半導体装置
JPS58178574A (ja) 保護装置を備えた半導体装置
JPS62155548A (ja) 半導体集積回路の静電保護回路素子
JPS63239972A (ja) 半導体装置の入力保護回路
JPS63274177A (ja) 半導体装置の保護回路
JPH04225528A (ja) 半導体装置
JPH0130301B2 (enExample)