JPS59198775A - 太陽電池 - Google Patents

太陽電池

Info

Publication number
JPS59198775A
JPS59198775A JP58073184A JP7318483A JPS59198775A JP S59198775 A JPS59198775 A JP S59198775A JP 58073184 A JP58073184 A JP 58073184A JP 7318483 A JP7318483 A JP 7318483A JP S59198775 A JPS59198775 A JP S59198775A
Authority
JP
Japan
Prior art keywords
electrode
edge
clear
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58073184A
Other languages
English (en)
Inventor
Yoshiyuki Umemoto
梅本　美之
Masao Iijima
飯島　正男
Masahide Miyagi
宮城　正英
Yoshihisa Muramatsu
村松　義久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP58073184A priority Critical patent/JPS59198775A/ja
Priority to US06/604,245 priority patent/US4570030A/en
Publication of JPS59198775A publication Critical patent/JPS59198775A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は共通透明基板上に透明電極、アモルファスシリ
コン（以下ａ−８＋と記す）層、金属電極を順次積層し
て複数の太陽電池素子を構成し、各素子を接続するため
に一つの素子の金属電極の端部がａ　−Ｓ　ｉ層の縁を
横切って隣接素子の透明電極の端部と接触せしめられる
太陽電池に関する。
〔従来技術とその問題点〕
第１図はそのような太陽電池の構造を示し、透明絶縁基
板、例えばガラス板１の上に、　例えばＩＴＯなどの透
明導電膜からなる透明電極２が分離された複数の区域に
被着し、その上に点を打って示したａ　ｓｉ層３、さら
にその上に斜線で示した金属電極４が積層されている。
このようにして構成された太陽電池素子を直列接続する
ため、あるいは端子形成のために、透明電極２にはａ−
８ｉ層に覆われない突出部２１あるいは分離部２２が設
けられ、隣接素子又は端部素子の金属１Ｔｔ極４の突出
部４１がその上に重なることにより電気的に接続される
。この場合金属電極の突出部４１がａ　　Ｓ＋層の縁を
超える区域５において、金属電極４と透明電極２とはａ
−８ｉ層３の僅かな幅Ｗで絶縁されているだけであるか
ら、両者間が短絡されやすい欠点があった。
〔発明の目的〕
本発明はこのような欠点を除去し、金属電極がａ−８ｉ
層を横切る区域において金属電極と透明電極が短絡しな
いような構造の太陽電池を提供することを目的とする。
〔発明の要点〕
本発明は上記の目的を達成するため、一つの素子の金属
電極の端部が透明電極の緑より張り出し４て形成された
ａ−８ｉ層の領域の縁を横切って隣接素子の透明電極の
露出した端部と接触するように太陽電池を構成する。
〔発明の実施例〕
第２図は本発明の実施例を示すもので、ガラス板１の上
に設けられた透明電極２を介して、例えばシランガスの
グロー放電分解により堆積されるａ　−Ｓ　４層３に透
明電極２より張り出した領域３１を形成する。隣接素子
の透明電極２の突出部２１と接続するための金属電極４
の突出部４１はとのａ　−８ｉ層領域３１の上に延び、
その縁３２を横切って透明電極の突出部２１に達する０
従ってこの縁３２においては金属電極の突出部４１と透
明電極２との距離はｌとなり、第１図のＷに比して遥か
に長（なるので短絡のおそれがな（なる。同様な構造は
第２図に示すように端子部の透明電極領域２２との接続
の際にも適用できる。
〔発明の効果〕
以上述べたように本発明による太陽電池においては、金
属電極が隣接素子との接続のためにａ　−８Ｉｆｄの縁
を横切る部分においてはａ　−Ｓ　１層を下側の透明電
極より張り出して設けられるため、金属篭筒と透明電極
との短絡が起こることがなく、信頼性高い太陽電池を得
ることができる。
【図面の簡単な説明】
第１図は従来の太陽電池の一例の平面図、第２図は本発
明の一実施例の平面図である０１・・・ガラス基板、２
・・・透明電極、２１・・・露出した透明′電極突出部
、３−　ａ　−８ｉ　Ｎｊ、　３１　・・ａ−８ｉ層の
張り出し領域、４・・・金属電極、４１・・・金川電極
突出部０

Claims (1)

    【特許請求の範囲】
  1. １）共通透明基板上に透明電極、アモルファスシリコン
    層、金属電極を順次積層して複数の太陽電池素子を構成
    し、各素子を接続するために一つの素子の金属電極の端
    部がアモルファスシリコン層の縁を横切って隣接素子の
    透明電極の露出した端部と接触せしめられるものにおい
    て、金属電極の端部が横切るアモルファス層の縁は透明
    電極より張り出して形成されたアモルファス層の領域に
    あることを特徴とする太陽電池。
JP58073184A 1983-04-26 1983-04-26 太陽電池 Pending JPS59198775A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58073184A JPS59198775A (ja) 1983-04-26 1983-04-26 太陽電池
US06/604,245 US4570030A (en) 1983-04-26 1984-04-26 Solar cell device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58073184A JPS59198775A (ja) 1983-04-26 1983-04-26 太陽電池

Publications (1)

Publication Number Publication Date
JPS59198775A true JPS59198775A (ja) 1984-11-10

Family

ID=13510792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58073184A Pending JPS59198775A (ja) 1983-04-26 1983-04-26 太陽電池

Country Status (2)

Country Link
US (1) US4570030A (ja)
JP (1) JPS59198775A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288253U (ja) * 1988-12-26 1990-07-12

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145504A (ja) * 2007-12-12 2009-07-02 Fujifilm Corp ウエブ状電極材料およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776882A (en) * 1980-10-30 1982-05-14 Seiko Epson Corp Thin film type solar battery

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281208A (en) * 1979-02-09 1981-07-28 Sanyo Electric Co., Ltd. Photovoltaic device and method of manufacturing thereof
JPS5623785A (en) * 1979-07-31 1981-03-06 Sanyo Electric Co Ltd Solar battery

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776882A (en) * 1980-10-30 1982-05-14 Seiko Epson Corp Thin film type solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288253U (ja) * 1988-12-26 1990-07-12

Also Published As

Publication number Publication date
US4570030A (en) 1986-02-11

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