JPS59193062A - 多結晶シリコン薄膜トランジスタ - Google Patents

多結晶シリコン薄膜トランジスタ

Info

Publication number
JPS59193062A
JPS59193062A JP58065470A JP6547083A JPS59193062A JP S59193062 A JPS59193062 A JP S59193062A JP 58065470 A JP58065470 A JP 58065470A JP 6547083 A JP6547083 A JP 6547083A JP S59193062 A JPS59193062 A JP S59193062A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
thin film
film transistor
electrode
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58065470A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554271B2 (enrdf_load_stackoverflow
Inventor
Seiji Kumada
熊田　政治
Hideo Tanabe
英夫 田辺
Kazuo Sunahara
砂原　和雄
Akira Misumi
三角　明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58065470A priority Critical patent/JPS59193062A/ja
Publication of JPS59193062A publication Critical patent/JPS59193062A/ja
Publication of JPH0554271B2 publication Critical patent/JPH0554271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP58065470A 1983-04-15 1983-04-15 多結晶シリコン薄膜トランジスタ Granted JPS59193062A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065470A JPS59193062A (ja) 1983-04-15 1983-04-15 多結晶シリコン薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065470A JPS59193062A (ja) 1983-04-15 1983-04-15 多結晶シリコン薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59193062A true JPS59193062A (ja) 1984-11-01
JPH0554271B2 JPH0554271B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=13288029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065470A Granted JPS59193062A (ja) 1983-04-15 1983-04-15 多結晶シリコン薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS59193062A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04130776A (ja) * 1990-09-21 1992-05-01 Casio Comput Co Ltd 薄膜トランジスタ
JPH04130777A (ja) * 1990-09-21 1992-05-01 Casio Comput Co Ltd 薄膜トランジスタの製造方法
KR100799824B1 (ko) 2005-08-17 2008-01-31 가부시키가이샤 고베 세이코쇼 소스/드레인 전극, 트랜지스터 기판 및 그의 제조 방법, 및표시 디바이스
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7915062B2 (en) 2006-06-22 2011-03-29 Mitsubishi Electric Corporation Method of manufacturing a TFT array substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140269A (enrdf_load_stackoverflow) * 1974-04-27 1975-11-10
JPS5821868A (ja) * 1981-08-03 1983-02-08 Hitachi Ltd 多結晶シリコン薄膜トランジスタの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50140269A (enrdf_load_stackoverflow) * 1974-04-27 1975-11-10
JPS5821868A (ja) * 1981-08-03 1983-02-08 Hitachi Ltd 多結晶シリコン薄膜トランジスタの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04130776A (ja) * 1990-09-21 1992-05-01 Casio Comput Co Ltd 薄膜トランジスタ
JPH04130777A (ja) * 1990-09-21 1992-05-01 Casio Comput Co Ltd 薄膜トランジスタの製造方法
KR100799824B1 (ko) 2005-08-17 2008-01-31 가부시키가이샤 고베 세이코쇼 소스/드레인 전극, 트랜지스터 기판 및 그의 제조 방법, 및표시 디바이스
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7915062B2 (en) 2006-06-22 2011-03-29 Mitsubishi Electric Corporation Method of manufacturing a TFT array substrate

Also Published As

Publication number Publication date
JPH0554271B2 (enrdf_load_stackoverflow) 1993-08-12

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