JPS59193036A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59193036A
JPS59193036A JP58066340A JP6634083A JPS59193036A JP S59193036 A JPS59193036 A JP S59193036A JP 58066340 A JP58066340 A JP 58066340A JP 6634083 A JP6634083 A JP 6634083A JP S59193036 A JPS59193036 A JP S59193036A
Authority
JP
Japan
Prior art keywords
chip
tin
brazing material
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58066340A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0226376B2 (cg-RX-API-DMAC10.html
Inventor
Toshio Tetsuya
鉄矢　俊夫
Hiroyuki Baba
博之 馬場
Osamu Usuda
修 薄田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58066340A priority Critical patent/JPS59193036A/ja
Priority to GB08409512A priority patent/GB2138633B/en
Priority to DE19843413885 priority patent/DE3413885A1/de
Publication of JPS59193036A publication Critical patent/JPS59193036A/ja
Publication of JPH0226376B2 publication Critical patent/JPH0226376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/24—
    • H10W20/40—
    • H10W70/417—
    • H10W72/073—
    • H10W72/07337—
    • H10W72/352—
    • H10W72/59—
    • H10W90/736—

Landscapes

  • Die Bonding (AREA)
JP58066340A 1983-04-16 1983-04-16 半導体装置の製造方法 Granted JPS59193036A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58066340A JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法
GB08409512A GB2138633B (en) 1983-04-16 1984-04-12 Bonding semiconductor chips to a lead frame
DE19843413885 DE3413885A1 (de) 1983-04-16 1984-04-12 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066340A JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59193036A true JPS59193036A (ja) 1984-11-01
JPH0226376B2 JPH0226376B2 (cg-RX-API-DMAC10.html) 1990-06-08

Family

ID=13313027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58066340A Granted JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JPS59193036A (cg-RX-API-DMAC10.html)
DE (1) DE3413885A1 (cg-RX-API-DMAC10.html)
GB (1) GB2138633B (cg-RX-API-DMAC10.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156823A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体装置
JPS62229848A (ja) * 1986-03-29 1987-10-08 Toshiba Corp 半導体装置
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
WO2006016479A1 (ja) * 2004-08-10 2006-02-16 Neomax Materials Co., Ltd. ヒートシンク部材およびその製造方法
JP2013052430A (ja) * 2011-09-06 2013-03-21 Sanyo Special Steel Co Ltd 鉛フリー接合材料

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
JPS63110765A (ja) * 1986-10-29 1988-05-16 Sumitomo Metal Mining Co Ltd Ｉｃ用リ−ドフレ−ム
US7830001B2 (en) 2005-05-23 2010-11-09 Neomax Materials Co., Ltd. Cu-Mo substrate and method for producing same
WO2008041350A1 (en) 2006-09-29 2008-04-10 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint
JP2008221290A (ja) * 2007-03-14 2008-09-25 Toshiba Corp 接合体および接合方法
JP5253794B2 (ja) * 2006-12-25 2013-07-31 山陽特殊製鋼株式会社 鉛フリー接合用材料およびその製造方法
JP5744080B2 (ja) * 2013-02-04 2015-07-01 株式会社東芝 接合体および半導体装置
JP2015056646A (ja) * 2013-09-13 2015-03-23 株式会社東芝 半導体装置及び半導体モジュール

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521106A (en) * 1978-07-31 1980-02-15 Nec Home Electronics Ltd Method of forming ohmic electrode
JPS55107238A (en) * 1979-02-09 1980-08-16 Hitachi Ltd Semiconductor device and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB907734A (en) * 1959-06-06 1962-10-10 Teizo Takikawa Method of soldering silicon or silicon alloy
DE1298387C2 (de) * 1964-02-06 1973-07-26 Semikron Gleichrichterbau Halbleiter-Anordnung
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps
DE2514922C2 (de) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Gegen thermische Wechselbelastung beständiges Halbleiterbauelement
JPS592175B2 (ja) * 1978-07-28 1984-01-17 株式会社東芝 半導体装置
JPS592174B2 (ja) * 1978-07-28 1984-01-17 株式会社東芝 半導体装置
DE2930789C2 (de) * 1978-07-28 1983-08-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521106A (en) * 1978-07-31 1980-02-15 Nec Home Electronics Ltd Method of forming ohmic electrode
JPS55107238A (en) * 1979-02-09 1980-08-16 Hitachi Ltd Semiconductor device and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156823A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体装置
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
JPS62229848A (ja) * 1986-03-29 1987-10-08 Toshiba Corp 半導体装置
WO2006016479A1 (ja) * 2004-08-10 2006-02-16 Neomax Materials Co., Ltd. ヒートシンク部材およびその製造方法
US7776452B2 (en) 2004-08-10 2010-08-17 Neomax Materials Co. Ltd. Heat sink member and method of manufacturing the same
JP2013052430A (ja) * 2011-09-06 2013-03-21 Sanyo Special Steel Co Ltd 鉛フリー接合材料

Also Published As

Publication number Publication date
DE3413885A1 (de) 1984-10-25
DE3413885C2 (cg-RX-API-DMAC10.html) 1990-02-22
JPH0226376B2 (cg-RX-API-DMAC10.html) 1990-06-08
GB2138633B (en) 1986-10-01
GB2138633A (en) 1984-10-24

Similar Documents

Publication Publication Date Title
US5234149A (en) Debondable metallic bonding method
JP4609296B2 (ja) 高温半田及び高温半田ペースト材、及びそれを用いたパワー半導体装置
US8334598B2 (en) Power semiconductor device and manufacturing method therefor
US7863741B2 (en) Semiconductor chip and manufacturing method thereof
JP4431606B2 (ja) 半導体装置、半導体装置の実装方法、および半導体装置の実装構造
JPS59193036A (ja) 半導体装置の製造方法
JPH02123685A (ja) 金を含むワイヤを半田に接着する方法
US7838335B2 (en) Manufacturing method of semiconductor device with a mold resin having a mold release agent
JP2011023631A (ja) 接合構造体
JPH10180480A (ja) 無鉛半田材料及びそれを用いた電子部品
TW457662B (en) Fabrication method and structure of a chip size package
JP3191684B2 (ja) 電気めっきリードを有する半導体素子の製造方法
JPS62163335A (ja) 半導体装置
US3115694A (en) Method of producing a silicon semiconductor device
JPS5944834A (ja) 電子回路素子のダイボンデイング方法
JPS61156825A (ja) 半導体装置
JP2846181B2 (ja) 複合リードフレームの製造方法
JPH0525182B2 (cg-RX-API-DMAC10.html)
EP0219812A2 (en) Packaged semiconductor device having solderable external leads and process for its production
JP2503776B2 (ja) 半導体装置用基板
JPS60143636A (ja) 電子部品
JPH01205551A (ja) はんだバンプ電極形成方法
JPS6233747B2 (cg-RX-API-DMAC10.html)
JPH0118580B2 (cg-RX-API-DMAC10.html)
JPS58161355A (ja) 半導体整流素子