JPH0226376B2 - - Google Patents

Info

Publication number
JPH0226376B2
JPH0226376B2 JP58066340A JP6634083A JPH0226376B2 JP H0226376 B2 JPH0226376 B2 JP H0226376B2 JP 58066340 A JP58066340 A JP 58066340A JP 6634083 A JP6634083 A JP 6634083A JP H0226376 B2 JPH0226376 B2 JP H0226376B2
Authority
JP
Japan
Prior art keywords
tin
semiconductor chip
copper alloy
semiconductor device
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58066340A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59193036A (ja
Inventor
Toshio Tetsuya
Hiroyuki Baba
Osamu Usuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58066340A priority Critical patent/JPS59193036A/ja
Priority to GB08409512A priority patent/GB2138633B/en
Priority to DE19843413885 priority patent/DE3413885A1/de
Publication of JPS59193036A publication Critical patent/JPS59193036A/ja
Publication of JPH0226376B2 publication Critical patent/JPH0226376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/24—
    • H10W20/40—
    • H10W70/417—
    • H10W72/073—
    • H10W72/07337—
    • H10W72/352—
    • H10W72/59—
    • H10W90/736—

Landscapes

  • Die Bonding (AREA)
JP58066340A 1983-04-16 1983-04-16 半導体装置の製造方法 Granted JPS59193036A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58066340A JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法
GB08409512A GB2138633B (en) 1983-04-16 1984-04-12 Bonding semiconductor chips to a lead frame
DE19843413885 DE3413885A1 (de) 1983-04-16 1984-04-12 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066340A JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59193036A JPS59193036A (ja) 1984-11-01
JPH0226376B2 true JPH0226376B2 (cg-RX-API-DMAC10.html) 1990-06-08

Family

ID=13313027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58066340A Granted JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JPS59193036A (cg-RX-API-DMAC10.html)
DE (1) DE3413885A1 (cg-RX-API-DMAC10.html)
GB (1) GB2138633B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008221290A (ja) * 2007-03-14 2008-09-25 Toshiba Corp 接合体および接合方法
JP2013099790A (ja) * 2013-02-04 2013-05-23 Toshiba Corp 接合体

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
JPS61156823A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体装置
JPH0783034B2 (ja) * 1986-03-29 1995-09-06 株式会社東芝 半導体装置
JPS63110765A (ja) * 1986-10-29 1988-05-16 Sumitomo Metal Mining Co Ltd Ｉｃ用リ−ドフレ−ム
US7776452B2 (en) 2004-08-10 2010-08-17 Neomax Materials Co. Ltd. Heat sink member and method of manufacturing the same
US7830001B2 (en) 2005-05-23 2010-11-09 Neomax Materials Co., Ltd. Cu-Mo substrate and method for producing same
WO2008041350A1 (en) 2006-09-29 2008-04-10 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint
JP5253794B2 (ja) * 2006-12-25 2013-07-31 山陽特殊製鋼株式会社 鉛フリー接合用材料およびその製造方法
JP5758242B2 (ja) * 2011-09-06 2015-08-05 山陽特殊製鋼株式会社 鉛フリー接合材料
JP2015056646A (ja) * 2013-09-13 2015-03-23 株式会社東芝 半導体装置及び半導体モジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB907734A (en) * 1959-06-06 1962-10-10 Teizo Takikawa Method of soldering silicon or silicon alloy
DE1298387C2 (de) * 1964-02-06 1973-07-26 Semikron Gleichrichterbau Halbleiter-Anordnung
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
US3821785A (en) * 1972-03-27 1974-06-28 Signetics Corp Semiconductor structure with bumps
DE2514922C2 (de) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Gegen thermische Wechselbelastung beständiges Halbleiterbauelement
JPS592175B2 (ja) * 1978-07-28 1984-01-17 株式会社東芝 半導体装置
JPS592174B2 (ja) * 1978-07-28 1984-01-17 株式会社東芝 半導体装置
DE2930789C2 (de) * 1978-07-28 1983-08-04 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung
JPS5521106A (en) * 1978-07-31 1980-02-15 Nec Home Electronics Ltd Method of forming ohmic electrode
JPS55107238A (en) * 1979-02-09 1980-08-16 Hitachi Ltd Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008221290A (ja) * 2007-03-14 2008-09-25 Toshiba Corp 接合体および接合方法
JP2013099790A (ja) * 2013-02-04 2013-05-23 Toshiba Corp 接合体

Also Published As

Publication number Publication date
DE3413885A1 (de) 1984-10-25
DE3413885C2 (cg-RX-API-DMAC10.html) 1990-02-22
GB2138633B (en) 1986-10-01
JPS59193036A (ja) 1984-11-01
GB2138633A (en) 1984-10-24

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