TWI247396B - Bump and the fabricating method thereof - Google Patents
Bump and the fabricating method thereof Download PDFInfo
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- TWI247396B TWI247396B TW93109016A TW93109016A TWI247396B TW I247396 B TWI247396 B TW I247396B TW 93109016 A TW93109016 A TW 93109016A TW 93109016 A TW93109016 A TW 93109016A TW I247396 B TWI247396 B TW I247396B
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- bump
- tin
- lead
- weight percentage
- bumps
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- 238000000034 method Methods 0.000 title claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 7
- -1 wrong Chemical compound 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 abstract description 35
- 239000000203 mixture Substances 0.000 abstract description 5
- 229910052745 lead Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 229910000765 intermetallic Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910018082 Cu3Sn Inorganic materials 0.000 description 1
- 229910018471 Cu6Sn5 Inorganic materials 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000008774 maternal effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- Wire Bonding (AREA)
Abstract
Description
1247396 _案號93109016 _年 β _§ 修正_ 五、發明說明（1) 【發明所屬之技術領域】 本發明是有關於一種凸塊及其製造方法，且特別是 有關於一種錫鉛凸塊及其製造方法。 【先前技術】 在積體電路（I C )封裝的技術領域中’第一層級封 裝（First Level Package)主要係將晶粒（chip)連接 到承載器（c a r r i e r )上，大致上有三種封裝型態’分別 為打線技術（w i r e b ο n d i n g )、貼帶自動接合技術 (Tape Automatic Bonding，TAB)及覆晶接合技術 (FI ip Chip，F/C )。其中，無論是貼帶自動接合技術 (TAB )或是覆晶接合技術（F/C )，在晶粒與承載器在 接合的過程中，均須在晶圓（wafer)的銲墊（pad)上 進行凸塊製作，並以凸塊（bump )作為晶粒與承載器之 間電性連接的媒介。習知之凸塊的種類繁多，較為常見 的有錫錯凸塊（Solder Bump)、金凸塊（Gold Bump)、導電膠凸塊（Conductive Polymer Bump)及高 分子凸塊（Polymer Bump)等四種，其中又以錫錯凸塊 的應用最為廣泛。 目前錫鉛凸塊之常見的製作方式係在晶圓之銲墊上 方，先以蒸鑛（Evaporation)、丨賤鏟（Sputter)或電 鍍（Plating)的方式，於預定位置上製作一球底金屬層 (Under Ball Metallurgy，UBM)。之後，再將一厚光 阻形成於晶圓之上，並對此厚光阻層進行曝光與顯影製 程，而在厚光阻層内形成多個開口 ，且球底金屬層分^ 耩由运些開口暴露於外。然後，使用蒸錢1247396 _Case No. 93190016 _Year β _§ Amendment _ V. Technical Description of the Invention (1) The present invention relates to a bump and a method of manufacturing the same, and more particularly to a tin-lead bump and Its manufacturing method. [Prior Art] In the technical field of integrated circuit (IC) packaging, 'First Level Package' mainly connects a chip to a carrier, and generally has three package types. 'Wireb ο nding, Tape Automatic Bonding (TAB) and flip chip bonding technology (FI ip Chip, F/C). Among them, whether it is tape bonding automatic bonding (TAB) or flip chip bonding technology (F/C), in the process of bonding the die and the carrier, the pad must be placed on the wafer. The bump is fabricated on the bump, and a bump is used as a medium for electrically connecting the die to the carrier. There are many types of bumps, such as Solder Bump, Gold Bump, Conductive Polymer Bump, and Polymer Bump. Among them, the use of tin bumps is the most widely used. At present, the common method of making tin-lead bumps is above the solder pads of the wafers. First, a ball-bottom metal is formed at a predetermined position by means of evaporation, sputter or plating. Under Ball Metallurgy (UBM). Then, a thick photoresist is formed on the wafer, and the thick photoresist layer is exposed and developed, and a plurality of openings are formed in the thick photoresist layer, and the metal layer of the ball is separated. The openings are exposed to the outside. Then, use steamed money
1247396 _案號93109016_年月曰 修正__ 五、發明說明（2) (evaporation )、電鍍或印刷(printing )等製作方 法，將錫鉛銲料（s ο 1 d e r p a s t e )填入開口内，並進行 一迴銲（reflow)製程。迴鋅之後，在球底金屬層上便 形成了具有類似球狀外貌的錫鉛凸塊。 承上所述，球底金屬層通常可分為黏著層 (adhesion layer )、阻障層(barrier layer )以及沾 錫層（wetting Layer)，其中黏著層之材質通常為鈦 (T i )，阻障層之材質通常為鎳釩合金（N i V )，而沾錫 層之材質通常為銅（Cu)。沾錫層與錫鉛凸塊連接，而 接著層與晶片的線路層連接。就錫錯凸塊而言，當錫錯 凸塊長時間處於高溫的環境下，在錫鉛凸塊與球底金屬 層之介面處容易產生銅錫的介金屬化合物 (Intermetallic Compound, IMC)例如Cu3Sn 與 Cu6Sn5，或錫鎳銅介金屬化合物（Sn-Ni_Cu IMC)等。 由於介金屬化合物中的銅金屬與鎳金屬大部分來自於球 底金屬層，因此，錫鉛凸塊在高溫及/或高電流密度的情 況下操作時，會產生球底金屬層消耗的問題。換言之’ 當球底金屬層之鎳或銅金屬被消耗殆盡時，凸塊中的錫 金屬便有可能侵入晶片内部，因而造成晶片失效。 此外，在高溫及/或高電流密度操作下所產生的電致 遷移效應（electromigration effect)常會在凸塊内部 造成微小空孔（vo i d )，當微小空孔聚集後就可能造成 電性連接中斷。上述兩種原因都是造成錫鉛凸塊與晶片 電性連接中斷的原因之一。 【發明内容】1247396 _ Case No. 93190016_Yearly revision __ V. Description of invention (2) (evaporation), electroplating or printing (printing), etc., filling tin-lead solder (s ο 1 derpaste) into the opening and performing A reflow process. After the zinc is returned, a tin-lead bump having a spherical appearance is formed on the metal layer of the ball. As mentioned above, the bottom metal layer can be generally divided into an adhesion layer, a barrier layer and a wetting layer, wherein the material of the adhesive layer is usually titanium (T i ), which is resistant. The material of the barrier layer is usually nickel vanadium alloy (N i V ), and the material of the tin-plated layer is usually copper (Cu). The tin-coated layer is connected to the tin-lead bumps, and the subsequent layers are connected to the wiring layers of the wafer. In the case of tin bumps, when a tin bump is exposed to a high temperature for a long period of time, an intermetallic compound (ICC) such as Cu3Sn is easily formed at the interface between the tin-lead bump and the bottom metal layer. And Cu6Sn5, or tin-nickel-copper intermetallic compound (Sn-Ni_Cu IMC). Since the copper metal and the nickel metal in the intermetallic compound are mostly derived from the bottom metal layer, when the tin-lead bump is operated under high temperature and/or high current density, the problem of the consumption of the ball-bottom metal layer occurs. In other words, when the nickel or copper metal of the bottom metal layer is consumed, the tin metal in the bump may intrude into the inside of the wafer, thereby causing the wafer to fail. In addition, the electromigration effect generated under high temperature and/or high current density operation often causes tiny voids (vo id ) inside the bumps, which may cause electrical connection interruption when tiny pores are collected. . Both of the above reasons are one of the reasons for the interruption of the electrical connection between the tin-lead bumps and the wafer. [Summary of the Invention]
12632twf2.ptc 第5頁 1247396 案號93109016 年 月 曰 修正 五、發明說明（3) 有鑒於此，本發明的目的就是在提供一種凸塊，以 改善介金屬化合物所引起的可靠度（r e 1 i a b i 1 i t y )問 題。 此外，本發明的再一目的是提供一種凸塊製作方 法，以改善介金屬化合物所產生的可靠度問題。 基於上述目的或其他目的，本發明提出一種凸塊， 其適於配置在一晶片上，而凸塊之材質例如包括錫、錯 以及銅，其中錫的重量百分比係介於6 1 . 5 % - 6 2 . 5 %之間， 而船的重量百分比係介於3 5. 5 % - 3 6 . 5 %之間，且銅的重量 百分比係介於1 . 5 2 . 5 %之間。 基於上述目的或其他目的，本發明提出一種凸塊製 作方法，其適於在一晶圓之多個焊墊上製作多個凸塊， 而凸塊製作方法例如包括下列步驟。首先，於晶圓之每 一焊墊上形成一焊料（solder paste)，而焊料之材質 包括錫、錯以及銅，其中錫的重量百分比係介於61. 5%-62. 5%之間，而船的重量百分比係介於35. 5%-36. 5%之 間，且銅的重量百分比係介於1 . 5 % - 2 . 5 %之間。隨後，對 這些焊料進行迴焊。 依照本發明較佳實施例所述之凸塊製作方法，上述 之焊料的形成方法例如為印刷（p r i n t i n g )。 基於上述，本發明之凸塊成分能夠減缓球底金屬層 的消耗速率，以改善凸塊與晶片之間的接合可靠度。 為讓本發明之上述和其他目的、特徵和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作 詳細說明如下。12632twf2.ptc Page 5 1247396 Case No. 93190016 Revision 5, Invention Description (3) In view of this, the object of the present invention is to provide a bump to improve the reliability caused by the intermetallic compound (re 1 iabi 1 ity ) problem. Further, it is still another object of the present invention to provide a bump manufacturing method for improving the reliability of a metal intermetallic compound. The present invention provides a bump that is suitable for being disposed on a wafer, and the material of the bump includes, for example, tin, aluminum, and copper, wherein the weight percentage of tin is between 6 1 . 5 % - Between 6 2 . 5 %, and the weight percentage of the ship is between 3 5. 5 % - 3 6 . 5 %, and the weight percentage of copper is between 1.5 and 2.5 %. Based on the above and other objects, the present invention provides a bump manufacturing method suitable for fabricating a plurality of bumps on a plurality of pads of a wafer, and the bump manufacturing method includes, for example, the following steps. First, a solder paste is formed on each of the pads of the wafer, and the material of the solder includes tin, aluminum, and copper, wherein the weight percentage of the tin is between 61.5% and 62.5%. The weight percentage of the copper is between 35.5% and 36.5%, and the weight percentage of copper is between 1.5% and 2.5%. These solders are then reflowed. According to the bump manufacturing method of the preferred embodiment of the present invention, the solder forming method is, for example, printing (p r i n t i n g ). Based on the above, the bump component of the present invention can slow the rate of consumption of the under-ball metal layer to improve the bonding reliability between the bump and the wafer. The above and other objects, features, and advantages of the present invention will be apparent from
12632twf2.ptc 第6頁 1247396 案號 93109016 五、發明說明（4) 實施方式 由於習知技術的凸塊組成成分主要為6 3 %的錫以及 3 7 %的鉛’但是’如此組成成分之凸塊並不能夠符合高溫 及/或高電流密度操作的需求，原因在於：錫鉛凸塊 (Sn6 3Pb37 )與晶片上的球底金屬層之間會反應生成介 金屬化合物，使得球底金屬層逐漸消耗而喪失功能，此 外，錫鉛凸塊（Sn63Pb37 )在高溫及/或高電流密度的情 ，下操作時，會有孔洞的產生，進而導致錫鉛凸塊與晶 二2連接”。本發明即針對上述現象進行凸塊成分 望1正，以確貫改善球底金屬層逐 等問題。 #、隹ΐ ί二ί Ϊ施例針對重量百分比為6 3 %錫3 7%錯之凸 :ί:::i二ΐ丄ΐ針對電流強度與凸塊溫度對於凸 塊與Β曰片連接的可罪度之影響進行評估。 請參考第1圖，其表歹丨丨h 凸塊之可靠度實驗數據圖J。出首重f 37%_鉛之 明。首次失效代表實驗母體樣 ，二==進仃說 時間，而6 3. 2 0%則代表累積矣 I ^ f現失j樣本的 63 泰日# Μ。= Ϊ ί積失樣本佔實驗母體樣本的 為1 50 t：的條件下進行測n日^作電/^為1 6〇mA且刼作溫度 广時，而到達63.2Π失效率之時間為5 了;=0 操作電流為1 6 0 m Α且操作、、田声盔】β η。广认/<r丄 田樣本在 時，首±1屮g c的條件下進行測試 J 失效出現守間則縮短為227小時，而到達63 ?n〇/ 失效率之時間僅為3 0 7小時。含援太^二从=12632twf2.ptc Page 6 1247396 Case No. 93190016 V. Description of the Invention (4) Embodiments The bump components of the prior art are mainly 63% tin and 37% lead 'but' the bumps of such composition It does not meet the requirements of high temperature and/or high current density operation because the tin-lead bump (Sn6 3Pb37 ) reacts with the bottom metal layer on the wafer to form a intermetallic compound, which causes the bottom metal layer to be gradually consumed. In addition, when the tin-lead bump (Sn63Pb37) is operated under high temperature and/or high current density, there is a hole, which leads to the connection of the tin-lead bump to the crystal 2". In view of the above phenomenon, the bump component is expected to be positive, so as to surely improve the problem of the metal layer of the ball bottom. #,隹ΐ ί 2ί Ϊ The example is for the weight percentage of 63% tin 3 7% wrong convex: ί: ::i II evaluates the effect of current intensity and bump temperature on the sinus of bump and splicing connections. Refer to Figure 1 for the reliability data of the 歹丨丨h bumps. Figure J. The first weight f 37% _ lead of the Ming. First failure Table test maternal sample, two == enter the time, while 6 3. 2 0% represents the cumulative 矣I ^ f is now missing j sample of 63 Thai day # Μ. = Ϊ 积 积 积 accumulation of samples accounted for the experimental sample Under the condition of 1 50 t:, the measurement is performed on the n-day ^^ electricity/^ is 16 mA and the temperature is wide, and the time to reach 63.2 Π is 5; the operating current is 1600 m Α And operation, Tiansheng helmet] β η. Wide recognition / <r丄田 samples in the first ±1屮gc test under the condition of J failure, the defensive interval is shortened to 227 hours, and reached 63 ?n〇 / The time for failure rate is only 307 hours.
且掉作、、田声兔1 ς n 0r A片 田7 在才呆作電 '々丨l為3 2 0 m A 铀作狐度為1 50 C的條件下進行測試時，首次失效出現And the work, the Tiansheng rabbit 1 ς n 0r A piece Tian 7 is in the power of ' 々丨 l for 3 2 0 m A uranium for 1 50 C when the test, the first failure occurs
1247396 --- ---案號 931090] fi _年月日__修正_ 五、發明說明（5) 時間則縮短為2 1 6小時，而到達6 3 · 2 0 %失效率之時間為 307小時。由上述實驗數據可推論，對於63%錫37%鉛之凸 塊而言，不論是操作溫度的提高或是電流密度的提高， 都會使得凸塊的壽命縮短，造成可靠度下降。 承上所述，本發明之較佳實施例提出一種凸塊，其 適於配置在一晶片上，而凸塊之材質例如包括錫、錯以 及銅，其中錫、鉛的重量百分比係介於9 7 . 5 % — 9 8 5 %之 間， 而銅的重量百分比係介於1 · 5 %- 2 · 5 %之間。然而，較佳之 錫的重量百分比係介於61. 5%-6 2· 5%之間，而錯的重量百 分比係介於35· 5%-3 6· 5%之間。以下將針對本實施例之錫 錯凸塊與其他不同錫鉛比例之錫鉛凸塊進行實驗，並分 別對各種組成成分之凸塊進行可靠度的評估。 凊參考第2圖’其表列出各種不同重量百分比例之錫 氣凸塊之可靠度實驗數據圖。當樣本在操作電流為32〇111 A 且操作溫度為150 °C的條件下進行測試時，就9 5%鉛5%錫 之凸塊、9 0 %鉛1 0 %錫之凸塊以及6 3 %錫3 7 %錯之凸塊而 言’首次失效時間分別為3150小時、1 7 2 8小時與2 ίβ小 ^ ’而到達63· 2%失效率的時間分別為3 9 2 9小時、、197〇小 時與3 07小時。由第2圖可清楚得知，高鉛凸塊的可靠度 較佳’較適用於高溫及/或高電流密度 卜然凸塊中鉛的重量百分比含量越高，其值可付靠主/壽的 itii，但是高鉛凸塊所需迴焊的溫度較高，而二： 此f藝者均能瞭解迴焊的溫度越高將會產生一系列的熱 問題’因此目前趨勢為迴焊溫度越低越好。 ’、 …1247396 --- --- Case No. 931090] fi _ year, month, day __ correction _ five, invention description (5) time is shortened to 2 16 hours, and the time to reach 6 3 · 2 0 % failure rate is 307 hour. From the above experimental data, it can be inferred that for the 63% tin 37% lead bump, whether the operating temperature is increased or the current density is increased, the life of the bump is shortened, resulting in a decrease in reliability. In view of the above, a preferred embodiment of the present invention provides a bump suitable for being disposed on a wafer, and the material of the bump includes, for example, tin, aluminum, and copper, wherein the weight percentage of tin and lead is between 9 Between 7 % and 9 8 5 %, and the weight percentage of copper is between 1 · 5 % - 2 · 5 %. Preferably, however, the weight percentage of tin is between 61.5% and 6%, and the weight percentage is between 35.5% and 6.55%. In the following, the tin bumps of this embodiment and other tin-lead bumps of different tin-lead ratios were tested, and the reliability of the bumps of various compositions was evaluated.凊 Refer to Figure 2 for a table showing the reliability test data for various tint bumps of various weight percentages. When the sample is tested at an operating current of 32〇111 A and an operating temperature of 150 °C, 9 5% lead 5% tin bumps, 90% lead 10% tin bumps, and 6 3 In the case of % tin 3 7 % wrong bumps, the first failure time was 3150 hours, 1 7 2 8 hours and 2 ίβ small ^ ', and the time to reach 63· 2% failure rate was 3 9 2 9 hours, respectively. 197 hours and 3 07 hours. It can be clearly seen from Fig. 2 that the reliability of high-lead bumps is better. 'It is more suitable for high temperature and/or high current density. The higher the weight percentage of lead in the bumps, the higher the value can be paid to the main/life. Itii, but the high-lead bumps require a higher temperature for reflow, and two: this one can understand that the higher the temperature of reflow will produce a series of thermal problems', so the current trend is the reflow temperature. The lower the better. ', ...
1247396 _案號 93109016_年月日_魅_ 五、發明說明（6) 請再參考第2圖，對於62%鉛36%錫2 %銅之凸塊，及 6 3 %錫3 7 %鉛之凸塊而言，首次失效時間分別為7 5 2小時與 2 1 6小時，而到達6 3 . 2 %之失效率的時間分別為1 3 6 9小時 與3 0 7小時。因此，本發明採用1. 5 %至2 . 5 %的銅便可大幅 地提高可靠度壽命。此外，由於本發明之凸塊成分組成 與6 3 %鉛3 7 %錫之凸塊組成成分相近，故兩種凸塊的迴焊 溫度相近。另外，對於本發明所提出之凸塊，其製作方 法詳述如後。 本發明提出一種凸塊製作方法，其適於在一晶圓之 多個焊墊上製作多個凸塊，而凸塊製作方法包括下列步 驟。首先，於晶圓之每一焊墊上形成一焊料，而焊料之 材質包括錫、鉛以及銅，其中錫、鉛的重量百分比係介 於9 7. 5%-98. 5%之間，而銅的重量百分比係介於1 . 5%-2. 5 %之間。值得注意的是，上述之錫與鉛的含量較佳為 錫的重量百分比介於61. 5%-62. 5%之間，而鉛的重量百分 比介於3 5. 5%-3 6. 5%之間，其中錫與鉛的含量亦可以是其 他比例。或者，錫與船的重量百分比係不小於9 8 %，而銅 的重量百分比係不大於2 %。隨後，對這些焊料進行迴 焊，而焊料的形成方法例如為印刷。值得一提的是，相 較於習知使用蒸鍍或電鍍製程形成銲料，本實施例之銲 料形成方法為印刷，因此本發明之凸塊製造方法具有成 本上的優勢。 綜上所述，本發明之凸塊及其製作方法具有下列優 點： 一、本發明之凸塊中除了錫鉛之外，更具有重量百1247396 _ Case No. 93190016_年月日日_魅_五、发明说明(6) Please refer to Figure 2 for 62% lead 36% tin 2% copper bump, and 63% tin 3 7 % lead For the bumps, the first failure time was 752 hours and 21.6 hours, respectively, and the time to failure of reaching 63. 2% was 136 hours and 307 hours, respectively. Therefore, the present invention can greatly improve the reliability life by using 1.5% to 2.5% of copper. In addition, since the bump composition of the present invention is similar to the bump composition of 63% lead 37% tin, the reflow temperatures of the two bumps are similar. Further, the manufacturing method of the bump proposed by the present invention will be described in detail later. The present invention provides a bump fabrication method suitable for fabricating a plurality of bumps on a plurality of pads of a wafer, and the bump fabrication method comprises the following steps. First, a solder is formed on each of the pads of the wafer, and the material of the solder includes tin, lead, and copper, wherein the weight percentage of tin and lead is between 97.5% and 98.5%, and copper. 5%之间之间。 The weight percentage is between 1. 5% - 2. 5%. It is to be noted that the tin and lead content of the tin is preferably between 61.5% and 62.5%, and the weight percentage of lead is between 3.5% and 3. 6 Between the %, the content of tin and lead can also be other ratios. Alternatively, the weight percentage of tin to the ship is not less than 98%, and the weight percentage of copper is not more than 2%. Subsequently, these solders are reflowed, and the solder is formed by, for example, printing. It is worth mentioning that the solder forming method of the present embodiment is printing as compared with the conventional method of forming solder using an evaporation or electroplating process, and therefore the bump manufacturing method of the present invention has a cost advantage. In summary, the bump of the present invention and the manufacturing method thereof have the following advantages: 1. The bump of the present invention has a weight in addition to tin-lead.
12632twf2.ptc 第9頁 1247396 _案號93109016_年月日 修正_ 五、發明說明（7) 分比係介於1 . 5 %- 2 . 5 %之間的銅金屬，所以相較於習知 6 3 %錫3 7 %錯之凸塊，本發明之凸塊具有較佳的可靠度。 二、 本發明之凸塊具有重量百分比係介於L 5 2 · 5 % 之間的銅金屬且錯的重量百分比係介於35·5%-36·5%之 間，所以迴焊的溫度與習知6 3 %錫3 7 %鉛之凸塊相近。 三、 相較於習知的凸塊製作方法，本發明之凸塊製 作方法採用印刷的方式形成銲料具有成本上的優勢。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍内，當可作些許之更動與潤飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。12632twf2.ptc Page 9 1247396 _ Case No. 93190016_年月日日 Revision _ V. Description of invention (7) The ratio is between 1.5% and 2.5% of copper metal, so compared with the conventional 6 3 % tin 3 7 % wrong bump, the bump of the invention has better reliability. 2. The bump of the present invention has a weight percentage of copper metal between L 5 2 · 5 % and the weight percentage of the error is between 35.5% and 36.5%, so the temperature of the reflow is Conventional 6 3 % tin 3 7 % lead bumps are similar. Third, the bump manufacturing method of the present invention has a cost advantage in forming solder by printing in comparison with the conventional bump manufacturing method. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
12632twf2.ptc 第10頁 1247396 _案號 93109016_年月日_iMz_ 圖式簡單說明 第1圖表列出重量百分比為6 3 %錫3 7 %鉛之凸塊之可靠 度實驗數據圖。 第2圖表列出各種不同重量百分比例之錫鉛凸塊之可 靠度實驗數據圖。 【圖式標示說明】 無12632twf2.ptc Page 10 1247396 _ Case No. 93109016_Year of the month _iMz_ Simple description of the diagram The first chart shows the experimental data of the reliability of the bumps with a weight percentage of 63% tin 3 7 % lead. The second chart shows the experimental data of the reliability of tin-lead bumps of various weight percentages. [Graphic indication] None
12632twf2.ptc 第11頁12632twf2.ptc Page 11
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