JP2801793B2 - Tin-plated copper alloy material and method for producing the same - Google Patents
Tin-plated copper alloy material and method for producing the sameInfo
- Publication number
- JP2801793B2 JP2801793B2 JP12673191A JP12673191A JP2801793B2 JP 2801793 B2 JP2801793 B2 JP 2801793B2 JP 12673191 A JP12673191 A JP 12673191A JP 12673191 A JP12673191 A JP 12673191A JP 2801793 B2 JP2801793 B2 JP 2801793B2
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- Prior art keywords
- tin
- layer
- plating
- thickness
- copper alloy
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Description
【0001】[0001]
【産業上の利用分野】本発明は、錫めっき銅合金材およ
びその製造方法に係り、より詳細には、例えば、端子・
コネクター等の電子材料部品に好適に用いられる半田付
け性に優れた錫めっき銅合金材およびその製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tin-plated copper alloy material and a method for manufacturing the same, and more particularly, to a tin-plated copper alloy material and
The present invention relates to a tin-plated copper alloy material having excellent solderability, which is suitably used for an electronic material component such as a connector, and a method for producing the same.
【0002】[0002]
【従来の技術】錫めっき銅合金材は、端子・コネクター
をはじめ様々な電子部品に用いられている。錫めっきを
施す目的は、耐食性、良好な半田付け性を付与するため
である。また、接点材では、接触抵抗値を低く安定に保
つ目的をも持っている。2. Description of the Related Art Tin-plated copper alloy materials are used for various electronic parts including terminals and connectors. The purpose of tin plating is to provide corrosion resistance and good solderability. Further, the contact material also has a purpose of keeping the contact resistance value low and stable.
【0003】従来、これらの錫めっき銅合金材の多く
は、銅合金材上に直接錫めっきを施すか、あるいは銅合
金材と錫めっきの間に銅下地めっきを施して製造されて
いた。Znを含む黄銅では、銅下地めっきが施される
が、これは、Znが錫めっき中を短時間に粒界拡散し、
錫めっき層の表面に濃縮して半田付け性を劣化させるこ
とを防ぐためである。Conventionally, most of these tin-plated copper alloy materials have been manufactured by directly tin-plating a copper alloy material or by plating a copper base between the copper alloy material and the tin plating. In brass containing Zn, a copper base plating is applied. This is because Zn diffuses at a grain boundary in tin plating in a short time,
This is to prevent the concentration on the surface of the tin plating layer from deteriorating the solderability.
【0004】しかし、銅下地めっき上に直接、錫めっき
を施すと、室温付近の温度においても、錫と銅が反応拡
散して、金属間化合物Cu6Sn5からなるη層ができ
る。また、約80℃以上の環境に置かれると金属間化合
物Cu3 Snからなるε層も成長する。これらの拡散は
非常に速く、100〜200℃で数時間から数十時間で
1〜2μm拡散する。However, tin plating is directly applied on copper base plating.
When tin is applied, tin and copper react and expand even at temperatures around room temperature.
Scattered, intermetallic compound Cu6SnFiveΗ layer consisting of
You. When placed in an environment of about 80 ° C or more,
Thing CuThree An ε layer made of Sn also grows. These spreads
Very fast, at 100-200 ° C for several hours to tens of hours
Spread 1-2 μm.
【0005】これら金属間化合物は錫めっき材の特性に
悪影響を及ぼす。例えば、錫めっきとCuが反応拡散し
て脆いε層を厚く形成すると、曲げ加工時のめっき層の
剥離の原因となる。また、錫めっき層全体が金属間化合
物となり、純錫層がなくなると、半田付けが不可能にな
ったり、錫めっき層の表面にCuが拡散して銅の酸化物
をつくり、接触抵抗値が高くなったりする。[0005] These intermetallic compounds adversely affect the properties of the tin plated material. For example, when tin plating and Cu react and diffuse to form a brittle ε layer thick, this causes peeling of the plated layer during bending. In addition, if the entire tin plating layer becomes an intermetallic compound and the pure tin layer disappears, soldering becomes impossible, or Cu diffuses into the surface of the tin plating layer to form copper oxide, and the contact resistance value decreases. Or get higher.
【0006】最近の、電気・電子部品の小型化、薄肉
化、および表面実装化の導入による半田付け方法の変化
によって、部品の受ける熱影響はさらに厳しいものにな
っている。そこで、従来の錫めっき銅合金材は、良好な
半田付け性や低く安定な接触抵抗値を満足できない場合
が発生するようになった。[0006] Recent changes in soldering methods due to the introduction of miniaturization, thinning, and surface mounting of electric and electronic components have made the thermal effects on components more severe. Therefore, the conventional tin-plated copper alloy material has come to have a case where satisfactory solderability and low and stable contact resistance cannot be satisfied.
【0007】これを避けるための1つの対策として、錫
めっきを厚く施し、拡散の時間をかせぐ方法があるが、
錫めっき材のコストを高くするという問題がある。ま
た、錫めっきが厚いとスタンピングの際に端面に錫のバ
リ(スタンピングのカス)が多く発生し、金型の寿命を
短くする問題があった。As a countermeasure to avoid this, there is a method in which tin plating is applied thickly to save time for diffusion.
There is a problem that the cost of the tin plating material is increased. Further, when the tin plating is thick, many burrs (stamps of stamping) of tin are generated on the end face during stamping, and there is a problem that the life of the mold is shortened.
【0008】そこで、従来通りの薄い錫めっき層で、熱
影響に対して半田付け性および接触抵抗値の変化が小さ
い錫めっき銅合金材が望まれていた。Accordingly, there has been a demand for a tin-plated copper alloy material having a conventional thin tin-plated layer and having a small change in solderability and contact resistance value under the influence of heat.
【0009】[0009]
【発明が解決しようとする課題】本発明は、熱影響後の
半田付け性に優れる錫めっき銅合金材およびその製造方
法を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a tin-plated copper alloy material having excellent solderability after thermal influence and a method for producing the same.
【0010】[0010]
【課題を解決するための手段】上記課題を解決するため
の本発明の第1の要旨は、表面に、銅下地めっき層、厚
さが0.1〜0.4μmの溶融して形成されたNi3S
n金属間化合物からなる中間層、錫めっき層が順次形成
されていることを特徴とする錫めっき銅合金材に存在す
る。A first gist of the present invention for solving the above-mentioned problems is that a copper base plating layer having a thickness of 0.1 to 0.4 μm is formed on a surface by melting. Ni 3 S
An intermediate layer made of n-intermetallic compound and a tin plating layer are sequentially formed, which is present in a tin-plated copper alloy material.
【0011】本発明の第2の要旨は、銅合金材の表面
に、銅下地めっき層、次いで厚さが0.08〜0.3μ
mのNi中間めっき層を施し、さらにその上に錫めっき
層を施した後、該錫めっき層を溶融(リフロー)させる
ことによって、銅下地めっき層と錫めっき層との中間に
0.1〜0.4μmのNi3Sn金属間化合物からなる
中間層を設けることを特徴とする錫めっき銅合金材の製
造方法に存在する。A second gist of the present invention is that a copper base plating layer is formed on a surface of a copper alloy material, and then a thickness of 0.08 to 0.3 μm.
m, a tin plating layer is further formed thereon, and then the tin plating layer is melted (reflowed) so that 0.1 to 0.1 mm is formed between the copper base plating layer and the tin plating layer. There is provided a method for manufacturing a tin-plated copper alloy material, comprising providing an intermediate layer made of a 0.4 μm Ni 3 Sn intermetallic compound.
【0012】本発明の第3の要旨は、銅合金材の表面
に、銅下地めっき層、次いで厚さが0.08〜0.3μ
mのNi中間めっき層を施した後、銅合金材を溶融した
錫中に浸漬し、溶融錫めっき層を形成すると同時に、銅
合金材と錫めっき層との中間に厚さが0.1〜0.4μ
mのNi3Sn金属間化合物からなる中間層を設けるこ
とを特徴とする錫めっき銅合金材の製造方法に存在す
る。A third gist of the present invention resides in that a copper base plating layer is formed on a surface of a copper alloy material, and then a thickness of 0.08 to 0.3 μm.
m, the copper alloy material is immersed in molten tin to form a molten tin plating layer, and the thickness between the copper alloy material and the tin plating layer is 0.1 to 0.4μ
An intermediate layer made of m 3 Ni 3 Sn intermetallic compound is provided.
【0013】[0013]
【作用】発明の作用を本発明の詳細な構成とともに説明
する。The operation of the present invention will be described together with the detailed structure of the present invention.
【0014】本発明では、銅下地めっきと錫めっき層と
の間に厚さが0.1〜0.4μmのNi3Sn層を設け
る。このNi3Sn層が錫めっき層中への銅の拡散を防
ぎ、ひいては錫めっき層が金属間化合物に変化するのを
抑制する。Ni3Sn金属間化合物層中のCuの拡散速
度が錫めっき層中の拡散速度に比べ、きわめて遅いこと
を知見し、かかる知見に基づきNi3Sn金属間化合物
を設ける構成としたものである。Ni3Sn金属間化合
物層層の存在によって、錫めっき層はCuとの金属間化
合物の生成を防ぎ純錫の部分を長期に保存することがで
きる。そして、純錫層を長期に渡って残存させること
が、良好な半田付け性、低い接触抵抗値を長期に保つこ
とになるのである。In the present invention, a Ni 3 Sn layer having a thickness of 0.1 to 0.4 μm is provided between the copper base plating and the tin plating layer. This Ni 3 Sn layer prevents copper from diffusing into the tin plating layer, and further suppresses the tin plating layer from changing to an intermetallic compound. The inventors found that the diffusion rate of Cu in the Ni 3 Sn intermetallic compound layer was extremely slower than the diffusion rate in the tin plating layer, and based on this finding, provided the Ni 3 Sn intermetallic compound. Due to the presence of the Ni 3 Sn intermetallic compound layer, the tin plating layer prevents the formation of an intermetallic compound with Cu and can preserve the pure tin portion for a long time. Then, leaving the pure tin layer for a long period of time will maintain good solderability and low contact resistance for a long period of time.
【0015】以下により詳細に本発明をなすに際して得
た知見とともに作用を明らかにする。The operation will be clarified in more detail below together with the knowledge obtained in carrying out the present invention.
【0016】従来、Ni3Sn層のような金属間化合物
ができると曲げ加工によってめっき層が金属間化合物の
層と銅合金材の界面から剥離すると言われていた。従っ
て、Ni3Sn金属間化合物の生成を極力抑えることが
従来から行われていた。しかし、経時的な拡散によって
できる金属間化合物の場合とは異なり、錫の融点以上で
溶融してできた金属間化合物の場合は、界面に拡散によ
る欠陥も少なく、密着性に優れていることを見い出し
た。Conventionally, it has been said that when an intermetallic compound such as a Ni 3 Sn layer is formed, the plating layer peels off from the interface between the intermetallic compound layer and the copper alloy material by bending. Therefore, it has been conventionally performed to minimize the generation of Ni 3 Sn intermetallic compound. However, unlike intermetallic compounds formed by diffusion over time, intermetallic compounds formed by melting at or above the melting point of tin have fewer defects due to diffusion at the interface and have excellent adhesion. I found it.
【0017】ただ、溶融してできた金属間化合物を銅下
地めっき層と錫めっき層との間に介在せしめた場合であ
っても必ずしも密着性に優れない場合もあり、その原因
を鋭意探求したところ、金属間化合物からなる層の厚み
が密着性に影響を与えていることをも突き止めた。However, even when the molten intermetallic compound is interposed between the copper base plating layer and the tin plating layer, the adhesion may not always be excellent, and the cause has been intensively investigated. However, they have also found that the thickness of the layer made of the intermetallic compound affects the adhesion.
【0018】このように、Ni3Snの金属間化合物か
らなる層は、それを錫の融点以上の温度で生成し、その
厚さを一定の範囲に制御した場合、めっき剥離の悪影響
を与えずに錫めっき層の合金化を防ぐという特徴をもつ
ことを明らかにした。これによって、熱的にもまた経時
的にも安定した半田付け性を有する錫めっき銅合金材及
びその製造方法を開発するにいたったのである。As described above, when the layer made of the intermetallic compound of Ni 3 Sn is formed at a temperature equal to or higher than the melting point of tin and its thickness is controlled within a certain range, it does not adversely affect the peeling of the plating. In addition, it was clarified that it has the feature of preventing alloying of the tin plating layer. This has led to the development of a tin-plated copper alloy material having stable solderability both thermally and over time, and a method for producing the same.
【0019】密着性に優れた金属間化合物とするには、
その厚さを0.1μm以上にする。Ni3Sn層の厚さ
を0.1μmとしたのは、銅の錫中への拡散を防ぐに
は、0.1μm以上のNi3Sn層が必要だからであ
る。また、0.4μm以下としたのは、それを越えても
銅の拡散防止の効果に大差は無いためである。また、
0.4μmを越えてNi3Sn層が成長すると、曲げ加
工時に曲げの応力が大きくなって、Ni3Sn層が銅合
金の界面から剥離する。さらに、0.4μmを越え錫め
っき層が薄いとその層の大部分が合金層になり純錫層が
薄くなり、ひいては半田付け性、接触抵抗性が悪くな
る。これは、加熱によって錫めっき層中にNiが拡散し
て錫めっき表面に達し、ニッケルの酸化物を生成する為
であると推定される。また、金属間化合物層が0.4μ
mを越えた厚さになるとめっき材をスタンピングする際
に、ダイスの寿命を短くする原因にもなる。よって、N
i3Sn層の厚さは0.1〜0.4μmとした。In order to obtain an intermetallic compound having excellent adhesion,
The thickness is set to 0.1 μm or more. The thickness of the Ni 3 Sn layer is set to 0.1 μm because a Ni 3 Sn layer of 0.1 μm or more is required to prevent copper from diffusing into tin. The reason why the thickness is set to 0.4 μm or less is that there is no great difference in the effect of preventing the diffusion of copper even if the thickness exceeds 0.4 μm. Also,
When the Ni 3 Sn layer grows beyond 0.4 μm, bending stress increases during bending, and the Ni 3 Sn layer peels off from the interface of the copper alloy. Furthermore, if the thickness of the tin plating layer exceeds 0.4 μm, most of the layer becomes an alloy layer, and the pure tin layer becomes thin, which results in poor solderability and contact resistance. It is presumed that this is because Ni diffuses into the tin plating layer by heating and reaches the tin plating surface to generate nickel oxide. In addition, the intermetallic compound layer is 0.4μ
When the thickness exceeds m, the life of the die is shortened when stamping the plating material. Therefore, N
The thickness of the i 3 Sn layer was 0.1 to 0.4 μm.
【0020】銅下地錫めっきの厚さは限定しないが、実
際には、0.3〜1.0μmが好ましい。素材からのZ
nの錫めっき層中への拡散を防ぎ、半田付け性を良好に
保つには、0.3μmの銅めっき層で十分だからであ
る。また、銅めっき層の厚さが1μm以上厚くても錫め
っき層中へのZnの拡散防止効果に大差がないからであ
る。Although the thickness of the tin plating on the copper base is not limited, in practice, it is preferably 0.3 to 1.0 μm. Z from material
This is because a 0.3 μm copper plating layer is sufficient to prevent n from diffusing into the tin plating layer and maintain good solderability. Also, even if the thickness of the copper plating layer is 1 μm or more, there is no great difference in the effect of preventing Zn from diffusing into the tin plating layer.
【0021】また、銅めっきの厚さは、コストやスタン
ピング時のバリやカスの発生を考慮すると薄い方が望ま
しい。しかし、一方、耐熱剥離性、半田付け性の観点か
らは厚い方が望ましい。詳細は、めっき材の用途に応じ
て決定すればよい。しかし、めっきを行なってから部品
に加工され、機器に実装される際の半田付けを行なうま
での期間をおよそ1年とすると、その期間、良好な半田
付け性を保持するためには、0.3μm以上とする事が
好ましい。The thickness of the copper plating is desirably thin in consideration of cost and generation of burrs and scum at the time of stamping. However, on the other hand, from the viewpoints of heat-peelability and solderability, a thicker one is desirable. The details may be determined according to the use of the plating material. However, assuming that the period from plating to processing into parts and soldering when mounted on equipment is about one year, in order to maintain good solderability during that period, it is necessary to use 0.1 mm. It is preferable that the thickness be 3 μm or more.
【0022】次に、製造方法について説明する。Next, the manufacturing method will be described.
【0023】本発明では、銅合金材の表面にまず銅下地
めっきを施し、この銅下地めっき上にニッケルめっきを
施し、さらに錫めっきを施す。錫めっきを施す方法は、
銅合金材に電気めっきを施した後にめっき層を溶融処
理するリフローめっき法、銅合金材を溶解錫の中に浸
漬して錫層を設ける溶融めっき法のいずれでもよい。前
者では、電気めっき皮膜を溶融させる時に溶融した錫め
っきとニッケルめっきとがNi3Sn層をつくる。溶融
めっきの場合も同様にNi3Sn層をつくる。すなわ
ち、リフローめっきでは、光沢を付与するリフロー工程
とニッケルめっきを化合物層に変化させる工程とを同時
に行なうものである。また、溶融めっきでは、錫層を設
ける工程をニッケルめっきを化合物層に変化させる工程
とを同時に行なうものである。In the present invention, first, a copper base plating is applied to the surface of the copper alloy material, a nickel plating is applied on the copper base plating, and a tin plating is applied. The method of applying tin plating is
Either a reflow plating method in which a plating layer is melt-processed after electroplating a copper alloy material, or a hot-dip plating method in which a copper alloy material is immersed in molten tin to form a tin layer may be used. In the former, the tin plating and the nickel plating that are melted when the electroplating film is melted form a Ni 3 Sn layer. In the case of hot-dip plating, a Ni 3 Sn layer is similarly formed. That is, in the reflow plating, a reflow step of giving gloss and a step of changing nickel plating to a compound layer are performed simultaneously. In the hot-dip plating, the step of providing a tin layer and the step of changing nickel plating to a compound layer are performed simultaneously.
【0024】ニッケルのめっきの厚さを0.08μm以
上としたのは、それよりも薄いと生成するNi3Sn層
の厚さが0.1μm未満となり、CuのSnめっき中へ
の拡散防止効果が不十分になるからである。また、0.
3μm以下としたのは、0.3μmを越えるとNi3S
n層の厚さが0.4μmを越え、上述した問題が生じる
からである。さらに、ニッケルめっき層が完全にはNi
3Sn金属間化合物層にならずに残存し、錫とニッケル
の反応拡散が進行して、欠陥が多く、脆い金属間化合物
層をつくる恐れがあるからである。よって、Niめっき
の厚さは0.08〜0.3μmとした。The reason why the thickness of the nickel plating is set to 0.08 μm or more is that if the thickness is smaller than that, the thickness of the Ni 3 Sn layer formed becomes less than 0.1 μm, and the effect of preventing Cu from diffusing into the Sn plating. Is insufficient. Also, 0.
The reason why the thickness is set to 3 μm or less is that the Ni 3 S
This is because the thickness of the n-layer exceeds 0.4 μm, and the above-described problem occurs. Furthermore, the nickel plating layer is completely Ni
This is because there is a possibility that the Sn intermetallic compound layer remains without being formed, and the reaction and diffusion of tin and nickel proceed to form a brittle intermetallic compound layer having many defects. Therefore, the thickness of the Ni plating is set to 0.08 to 0.3 μm.
【0025】なお、Ni3Sn層の厚さの制御は、リフ
ローめっきの場合は、Niめっきの厚さないしリフロー
温度及び時間を制御することにより、溶融めっきの場合
は、Niめっきの厚さないしめっき液の溶融温度及びめ
っき時間を制御することにより行えばよい。In the case of reflow plating, the thickness of the Ni 3 Sn layer is controlled by controlling the thickness of the Ni plating or the reflow temperature and time. In the case of hot-dip plating, the thickness of the Ni plating is controlled. It may be performed by controlling the melting temperature of the plating solution and the plating time.
【0026】なお、本発明では、母材としてZnを含む
銅合金(例えば、丹銅や黄銅)を用いた場合に特に顕著
な効果が得られるが、それ以外の銅あるいは銅合金を用
いることも可能である。In the present invention, a particularly remarkable effect is obtained when a copper alloy containing Zn (for example, copper or brass) is used as a base material, but other copper or copper alloys may be used. It is possible.
【0027】[0027]
【実施例】以下に本発明の実施例を説明する。Embodiments of the present invention will be described below.
【0028】本例では、母材として、丹銅のC2100
(5.1wt%Zn−Cu)、黄銅のC2600(3
0.5wt%Zn−Cu)、C2680(35.2wt
%zn−Cu)を用いた。In this example, as a base material, C2100
(5.1 wt% Zn-Cu), C2600 (3
0.5 wt% Zn-Cu), C2680 (35.2 wt%)
% Zn-Cu).
【0029】この銅合金の表面に、常法により銅下地め
っきを0.8μmの厚さに形成した。On the surface of the copper alloy, a copper base plating was formed to a thickness of 0.8 μm by a conventional method.
【0030】次いで、この銅下地めっき上に常法によ
り、ニッケルめっきを表1に示す厚さに形成した。Next, a nickel plating was formed on the copper base plating by a conventional method to a thickness shown in Table 1.
【0031】次に、表1のNo.1,No.6,No.
13〜No.15については溶融めっきを行い、それ以
外に付いてはリフローめっきを行った。Next, in Table 1, No. 1, No. 6, No.
13-No. For No. 15, hot-dip plating was performed, and for others, reflow plating was performed.
【0032】めっき条件は下記の通りである。The plating conditions are as follows.
【0033】 以上のようにして形成したしためっきにつき、錫めっ
きの厚さとNi3Sn層の厚さを測定した。その結果を
表1に示す。[0033] With respect to the plating formed as described above, the thickness of the tin plating and the thickness of the Ni 3 Sn layer were measured. Table 1 shows the results.
【0034】また、これらの錫めっき銅合金材を、22
0℃で5分および10分の熱処理を行った後、接触抵
抗、半田付け性及び密着性を評価した。評価方法は下記
の通りである。なお、上記熱処理条件は、最近のコネク
ターの表面実装化にともない増加しているリフロー半田
付け方法を考慮したものである。Further, these tin-plated copper alloy materials were
After performing heat treatment at 0 ° C. for 5 minutes and 10 minutes, contact resistance, solderability and adhesion were evaluated. The evaluation method is as follows. The above heat treatment conditions take into account the reflow soldering method that has been increasing with recent surface mounting of connectors.
【0035】(半田付け試験条件) 半田組成:Sn/Pb=6/4 半田温度:230±5℃ フラックス:ロジン系非活性フラックス 半田付けの評価は、半田付け後に半田の付着面積が85
%以上を“良好”とし、それ以下を“不良”とした。(Soldering Test Conditions) Solder composition: Sn / Pb = 6/4 Solder temperature: 230 ± 5 ° C. Flux: rosin-based inactive flux The evaluation of soldering was that the solder adhesion area was 85 after soldering.
% Or more was regarded as “good” and less than or equal to “poor”.
【0036】(接触抵抗測定条件) 荷重:50gf(測定時) 電流値:20mA 接触抵抗は、荷重を0〜50gfに変化させながら純金
のプローブを試料表面で往復スライドさせ、50gfの
荷重がかかった時の値を測定した。(Contact resistance measurement conditions) Load: 50 gf (at the time of measurement) Current value: 20 mA The contact resistance was such that a pure gold probe was reciprocated on the sample surface while changing the load from 0 to 50 gf, and a load of 50 gf was applied. The time value was measured.
【0037】(密着性試験)密着性は150℃で500
時間熱処理した後、これらの材料に90°繰り返し曲げ
を2回行い、曲げ部表面を実体顕微鏡で観察し、めっき
層の剥離の有無を確認した。(Adhesion test) Adhesion was 500 at 150 ° C.
After heat treatment for 90 hours, these materials were repeatedly bent twice at 90 °, and the surface of the bent portion was observed with a stereoscopic microscope to confirm the presence or absence of peeling of the plating layer.
【0038】半田付け性、接触抵抗の評価及び密着性試
験の結果を表1に示す。Table 1 shows the results of the evaluation of the solderability and the contact resistance and the results of the adhesion test.
【0039】その結果、金属間化合物Ni3Sn層の厚
さが0.1μm以上で0.4μm以下の時(NO.1〜
No.9、実施例)、半田付け性は良好で、接触抵抗値
が低く保たれた。これは、Ni3Sn層が、Cuの拡散
を抑制し、Cu6Sn5からなるη層、Cu3 Sn からな
るε層の成長を防止したためである。As a result, the intermetallic compound NiThreeSn layer thickness
Is 0.1 μm or more and 0.4 μm or less (NO.
No. 9, Example), good solderability, contact resistance
Was kept low. This is NiThreeSn layer diffuses Cu
And suppress Cu6SnFiveLayer composed of, CuThree Sn From
This is because the growth of the ε layer is prevented.
【0040】No.10〜No.18はいずれもNi3
Sn層の厚さが0.4μmを越えているため、密着性試
験でNi3Sn層の剥離が生じた。No. 10-No. 18 is Ni 3
Since the thickness of the Sn layer exceeded 0.4 μm, peeling of the Ni 3 Sn layer occurred in the adhesion test.
【0041】また、従来のように、金属間化合物Ni3
Sn層が無い場合(No.20,No.21)、あるい
はあっても0.1μmより薄い場合(No.19)は、
錫中にCu6Sn5からなるη層、Cu3 Sn からなるε
層が成長し、錫めっき層が早期に金属間化合物に変化し
てしまい密着性が悪かった。Further, as in the prior art, the intermetallic compound NiThree
When there is no Sn layer (No. 20, No. 21), or
However, when it is thinner than 0.1 μm (No. 19),
Cu in tin6SnFiveLayer composed of, CuThree Sn Ε consisting of
The layer grows and the tin-plated layer quickly changes to an intermetallic compound.
The adhesion was poor.
【0042】以上の実施例の結果から、金属間化合物N
i3Sn層の厚さは0.1〜0.4μmが必要であり、
その厚さの金属間化合物層を得るためには、Niめっき
層を0.08〜0.3μm施すことが必要であることが
明らかになった。From the results of the above examples, it can be seen that the intermetallic compound N
The thickness of the i 3 Sn layer needs to be 0.1 to 0.4 μm,
In order to obtain an intermetallic compound layer of that thickness, it became clear that it is necessary to apply a Ni plating layer of 0.08 to 0.3 μm.
【0043】[0043]
【発明の効果】本発明によって、優れた半田付け性、熱
的に安定な接触抵抗値を有する錫めっき黄銅あるいは丹
銅材を製造することができる。これらの錫めっき銅合金
材は、端子・コネクター等の電気・電子部品の半田付け
性および接触抵抗特性を向上させることになり、機器の
信頼性を高めるることに貢献できる。According to the present invention, tin-plated brass or copper material having excellent solderability and thermally stable contact resistance can be produced. These tin-plated copper alloy materials improve the solderability and contact resistance characteristics of electric and electronic components such as terminals and connectors, and can contribute to increasing the reliability of equipment.
【0044】[0044]
【表1】 [Table 1]
フロントページの続き (56)参考文献 特開 平4−323396(JP,A) 特開 昭61−166994(JP,A) 特開 平4−235292(JP,A) 特開 昭61−198507(JP,A) 特開 昭48−38247(JP,A) 特開 昭50−21272(JP,A) (58)調査した分野(Int.Cl.6,DB名) C25D 3/00 - 7/12Continuation of the front page (56) References JP-A-4-323396 (JP, A) JP-A-61-166994 (JP, A) JP-A-4-235292 (JP, A) JP-A-61-198507 (JP, A) , A) JP-A-48-38247 (JP, A) JP-A-50-21272 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C25D 3/00-7/12
Claims (3)
〜0.4μmの溶融して形成されたNi3Sn金属間化
合物からなる中間層、錫めっき層が順次形成されている
ことを特徴とする錫めっき銅合金材。1. A copper base plating layer having a thickness of 0.1
A tin-plated copper alloy material comprising an intermediate layer made of a molten Ni 3 Sn intermetallic compound having a thickness of up to 0.4 μm and a tin plating layer formed sequentially.
いで厚さが0.08〜0.3μmのNi中間めっき層を
施し、さらにその上に錫めっき層を施した後、該錫めっ
き層を溶融(リフロー)させることによって、銅下地め
っき層と錫めっき層との中間に0.1〜0.4μmのN
i3Sn金属間化合物からなる中間層を設けることを特
徴とする錫めっき銅合金材の製造方法。2. A copper base plating layer, a Ni intermediate plating layer having a thickness of 0.08 to 0.3 μm, and a tin plating layer thereon. By melting (reflowing) the plating layer, 0.1 to 0.4 μm of N is interposed between the copper base plating layer and the tin plating layer.
A method for producing a tin-plated copper alloy material, comprising providing an intermediate layer made of an i 3 Sn intermetallic compound.
いで厚さが0.08〜0.3μmのNi中間めっき層を
施した後、銅合金材を溶融した錫中に浸漬し、溶融錫め
っき層を形成すると同時に、銅合金材と錫めっき層との
中間に厚さが0.1〜0.4μmのNi3Sn金属間化
合物からなる中間層を設けることを特徴とする錫めっき
銅合金材の製造方法。3. After applying a copper base plating layer and then a Ni intermediate plating layer having a thickness of 0.08 to 0.3 μm on the surface of the copper alloy material, the copper alloy material is immersed in molten tin, Forming a hot-dip tinned layer and, at the same time, providing an intermediate layer made of a Ni 3 Sn intermetallic compound having a thickness of 0.1 to 0.4 μm between the copper alloy material and the tin plated layer; Manufacturing method of copper alloy material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12673191A JP2801793B2 (en) | 1991-04-30 | 1991-04-30 | Tin-plated copper alloy material and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12673191A JP2801793B2 (en) | 1991-04-30 | 1991-04-30 | Tin-plated copper alloy material and method for producing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04329891A JPH04329891A (en) | 1992-11-18 |
JP2801793B2 true JP2801793B2 (en) | 1998-09-21 |
Family
ID=14942489
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JP12673191A Expired - Lifetime JP2801793B2 (en) | 1991-04-30 | 1991-04-30 | Tin-plated copper alloy material and method for producing the same |
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JP (1) | JP2801793B2 (en) |
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JP2007231407A (en) * | 2006-03-03 | 2007-09-13 | Hitachi Cable Ltd | Solder plating conductor and its manufacturing method |
JP4626542B2 (en) * | 2006-03-03 | 2011-02-09 | 日立電線株式会社 | Method for producing solder-plated conductor |
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---|---|
JPH04329891A (en) | 1992-11-18 |
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