JPH0533187A - Method for controlling whisker in tinning - Google Patents

Method for controlling whisker in tinning

Info

Publication number
JPH0533187A
JPH0533187A JP20723691A JP20723691A JPH0533187A JP H0533187 A JPH0533187 A JP H0533187A JP 20723691 A JP20723691 A JP 20723691A JP 20723691 A JP20723691 A JP 20723691A JP H0533187 A JPH0533187 A JP H0533187A
Authority
JP
Japan
Prior art keywords
tin
plating
thickness
layer
whiskers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20723691A
Other languages
Japanese (ja)
Other versions
JP3014814B2 (en
Inventor
Hiroaki Kurihara
宏明 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to JP3207236A priority Critical patent/JP3014814B2/en
Publication of JPH0533187A publication Critical patent/JPH0533187A/en
Application granted granted Critical
Publication of JP3014814B2 publication Critical patent/JP3014814B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To control tin whiskers by a relatively low-cost means without introducing a metal other than tin as a plating film by preplating or alloy plating and to obtain a pure tin film having high reliability by tinning on a fine pattern. CONSTITUTION:When a fine Cu or Cu alloy pattern is tinned, it is first tinned in >=0.15mum thickness and all the resulting pure tin layer on the Cu base is converted into a Cu-Sn diffusion layer by heating. This diffusion layer is further tinned to form a pure tin layer of 0.15-0.8mum thickness.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、銅又は銅合金の微細パ
ターン上にスズメッキを施す場合にショートの原因とな
るスズメッキホイスカーを抑制する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for suppressing tin-plated whiskers that cause a short circuit when tin-plating a fine pattern of copper or copper alloy.

【0002】[0002]

【従来の技術及びその問題点】一般に、スズメッキ皮膜
は光沢のある外観を有し、耐食性及びハンダ付け性に優
れていることから、電子、電気機器等に広範に使用され
ている。これらスズメッキ皮膜にはいわゆる真正スズホ
イスカーが発生することが知られており、特に線幅及び
ギャップ幅が小さいフィルムキャリアーのインナーリー
ド部等の微細パターンでは、ホイスカーの発生がショー
トの原因となるため、従来から種々の対策が講じられて
いる。
2. Description of the Related Art In general, tin-plated coatings have a glossy appearance and are excellent in corrosion resistance and solderability, and are therefore widely used in electronic and electrical equipment. It is known that so-called genuine tin whiskers are generated in these tin-plated films, and particularly in fine patterns such as the inner lead portion of the film carrier having a small line width and gap width, the occurrence of whiskers causes a short circuit. Various measures have been taken conventionally.

【0003】スズホイスカーの抑制手段として、例え
ば、Cu,Ni,Pb,Sn−Pb,Sn−Ni,S
n−Cu等の下地メッキを施す、メッキ後にリフロー
処理を施す、メッキ後にアニール処理を施す、スズ
メッキを他の金属又は合金メッキに代える、スズメッ
キを鉛を数%以上含む半田メッキに代える、等が知られ
ている。
Examples of means for suppressing tin whiskers are Cu, Ni, Pb, Sn-Pb, Sn-Ni, S.
Substrate plating such as n-Cu, reflow treatment after plating, annealing treatment after plating, tin plating is replaced with other metal or alloy plating, tin plating is replaced with solder plating containing lead of several percent or more, etc. Are known.

【0004】しかしながら、の方法は下地メッキ処理
工程が付加されるので、その分工程が長くなり、コスト
アップとなる。の方法は最初に厚くメッキを施してお
かないと、銅−スズ拡散により、純スズのメッキ厚が減
ってしまい、最初に均一なメッキを施したとしても、リ
フロー後は、メッキ厚に偏りが生じてしまい、さらには
スズメッキ皮膜表面が酸化してしまうという問題点を有
する。の方法は短期間のホイスカー発生防止にはなる
が、2〜3ヶ月程度の長期間には完全なホイスカー発生
防止対策にはならない。及びの方法として金メッ
キ、半田メッキを行うことがあるが、金メッキは高価で
あり、またフィルムキャリアーの場合はICとのボンデ
イング温度、圧力をスズメッキより高く設定しなければ
ならず、半田メッキの場合は、メッキ皮膜の組成、膜厚
をコントロールすることが難しいという問題点を有す
る。
However, in the method (1), since an undercoating process is added, the process becomes longer and the cost increases. If you do not thicken the plating first, the plating thickness of pure tin will decrease due to copper-tin diffusion, and even if you uniformly plating first, there will be uneven plating thickness after reflow. However, there is a problem that the tin plating film surface is oxidized. Although the above method can prevent whiskers from being generated for a short period of time, it cannot be a complete measure to prevent whiskers from being generated in the long term of about 2 to 3 months. As a method of and, gold plating and solder plating may be performed, but gold plating is expensive, and in the case of a film carrier, the bonding temperature and pressure with IC must be set higher than that of tin plating. However, there is a problem that it is difficult to control the composition and thickness of the plating film.

【0005】本発明の目的は、下地メッキや合金メッキ
方法のようにスズ以外の金属をメッキ皮膜とすることな
く、安価で、しかも信頼性の高いスズメッキホイスカー
を抑制する方法を提供することにある。
An object of the present invention is to provide a method for suppressing tin plating whiskers which is inexpensive and highly reliable, without using a metal other than tin as a plating film unlike the undercoating or alloy plating method. ..

【0006】[0006]

【問題点を解決するための手段】本発明は、銅又は銅合
金の微細パターン上にスズメッキを施すに際し、まず厚
さ0.15μm以上のスズメッキを施し、次いで加熱処
理して該純スズ層をすべて銅素地とのCu−Sn拡散層
とし、その上にスズメッキを施し、純スズメッキ厚を
0.15〜0.8μmとすることにより、前記問題点を
解決したものである。
According to the present invention, when tin plating is applied on a fine pattern of copper or copper alloy, first, tin plating having a thickness of 0.15 μm or more is applied, and then heat treatment is performed to form the pure tin layer. The above problems are solved by forming a Cu-Sn diffusion layer with a copper base material, plating tin on the Cu-Sn diffusion layer, and setting the pure tin plating thickness to 0.15 to 0.8 [mu] m.

【0007】以下に本発明をその工程順に図面を参照し
て説明する。図1は本発明の工程説明図であり、この図
1において、(a)はポリイミド層1上に銅層2が形成
された銅素地フィルムキャリアーを示し、(b)はこの
フィルムキャリアー上に、スズメッキ層3をメッキ処理
により形成した状態を示す。このスズメッキ層3は厚さ
0.15μm以上とする。厚さが0.15μm未満であ
ると、ホイスカー抑制効果が不十分となる。次いで、7
0℃〜200℃で5分〜1時間の加熱処理を行い、スズ
メッキ層3を全て銅−スズ拡散層(合金層)4に変える
(c)。この後、(d)に示すように、このスズ拡散層
4の上に更に純スズ層5を施し、メッキ皮膜表面の純ス
ズ層5の厚さを0.15〜0.8μm(メッキ厚はコク
ール膜厚計により測定)とする。メッキ厚が0.15μ
mでボンディングが困難となり、0.8μm以上ではメ
ッキだれを生じ、短絡の原因となる。
The present invention will be described below in the order of steps with reference to the drawings. FIG. 1 is a process explanatory view of the present invention. In FIG. 1, (a) shows a copper base film carrier in which a copper layer 2 is formed on a polyimide layer 1, and (b) shows this film carrier. The state which formed the tin plating layer 3 by the plating process is shown. The tin plating layer 3 has a thickness of 0.15 μm or more. If the thickness is less than 0.15 μm, the whisker suppressing effect becomes insufficient. Then 7
Heat treatment is performed at 0 ° C. to 200 ° C. for 5 minutes to 1 hour, and all the tin plating layers 3 are changed to copper-tin diffusion layers (alloy layers) 4 (c). Thereafter, as shown in (d), a pure tin layer 5 is further applied on the tin diffusion layer 4, and the thickness of the pure tin layer 5 on the surface of the plating film is 0.15 to 0.8 μm (the plating thickness is Measured with a Coulter film thickness meter). Plating thickness is 0.15μ
When the thickness is 0.8 m or more, bonding becomes difficult, and when it is 0.8 μm or more, plating sagging occurs, which causes a short circuit.

【0008】このような本発明に係るメッキと通常のメ
ッキ、すなわちスズメッキをアニール処理しただけのス
ズメッキ皮膜とが区別できるかどうかを、x線回折、A
ES分析等で調べたところ、Cu3SnとCu6Sn5
x線回折強度比の値が、本発明に係るメッキでは1:
0.3〜0.5であるのに対し、通常のメッキでは1:
1〜1.5であった。さらに、本発明に係るメッキ表面
付近は純スズ層であるのに対し、通常メッキでは銅が表
面医付近まで拡散しており(AES分析)、両メッキ皮
膜は明瞭に区別できることが判明した。
Whether or not the plating according to the present invention can be distinguished from the ordinary plating, that is, the tin-plated film obtained by annealing the tin plating, is determined by x-ray diffraction and A
When examined by ES analysis or the like, the value of the x-ray diffraction intensity ratio of Cu 3 Sn and Cu 6 Sn 5 is 1: in the plating according to the present invention.
While it is 0.3 to 0.5, it is 1: in normal plating.
It was 1 to 1.5. Further, while the area around the plated surface according to the present invention is a pure tin layer, copper is diffused up to the area near the surface medicine in normal plating (AES analysis), and it was found that both plated films can be clearly distinguished.

【0009】本発明において、メッキ皮膜からスズホイ
スカーが発生しないのは次のような理由によるものと思
われる。すなわち、スズホイスカーの成長の駆動力の1
つは、銅−スズ拡散層(合金層)の成長(メッキ皮膜の
内部応力が増加する)であると言われている。しかる
に、本発明では、銅−スズ拡散層を積極的に形成したた
め、その上に再スズメッキ層をつけても、それ以上の銅
−スズ拡散が進まない、もしくは進み難いため、スズホ
イスカーが生長し難くなっているのだと考えられる。ま
た、再スズメッキによる下地メッキ表面の整面効果によ
り、スズホイスカーの芽が出難くなり、スズホイスカー
が発生し難くなっているのだと考えられる。
In the present invention, it is considered that the tin whiskers are not generated from the plating film for the following reason. That is, one of the driving forces for the growth of tin whiskers
One is said to be the growth of a copper-tin diffusion layer (alloy layer) (internal stress of the plating film increases). However, in the present invention, since the copper-tin diffusion layer is positively formed, even if a retin-plated layer is attached thereon, further copper-tin diffusion does not proceed or it is difficult to proceed, so tin whiskers grow. I think it's getting harder. It is also considered that tin whiskers are less likely to sprout due to the surface-regulating effect of the surface of the underplating due to re-tinning, and tin whiskers are less likely to occur.

【0010】本発明において、スズメッキは電解メッキ
及び無電解メッキのいずれの方法で形成してもよいが、
メッキ厚のバラツキが少ないことから無電解メッキとす
ることが好ましい。また、銅−スズ拡散層の形成は、ア
ニール処理で行っても、リフロー処理で行っても良い。
In the present invention, tin plating may be formed by either electrolytic plating or electroless plating.
It is preferable to use electroless plating because there is little variation in plating thickness. Further, the copper-tin diffusion layer may be formed by an annealing treatment or a reflow treatment.

【0011】[0011]

【発明の効果】以上のように本発明によれば、下地メッ
キや合金メッキ方法のように、スズ以外の金属をメッキ
皮膜として導入すること無く、比較的安価な手段でスズ
ホイスカーを抑制することができ、微細パターンにおけ
る信頼性の高いスズメッキのみのメッキ皮膜が得られ
る。
As described above, according to the present invention, it is possible to suppress tin whiskers by a relatively inexpensive means without introducing a metal other than tin as a plating film unlike the undercoating or alloy plating method. It is possible to obtain a plated film of only tin plating with high reliability in a fine pattern.

【0012】[0012]

【実施例1】フィルムキャリアー(IL数、152本)
上に無電解スズメッキ液として、TINPOSTjLT
−34(シプレイ・ファーイースト(株)製)を使用
し、60℃、7分間の下地無電解スズメッキを施した。
130℃〜200℃で1〜2時間のアニール処理を施し
た後に、再び無電解スズメッキを60℃で1分行い、サ
ンプルとした。これらスズメッキのアニール処理条件、
スズメッキ厚(螢光x線膜厚計、コクール膜厚計により
測定)等を表1に示し、1〜5ヶ月後にIL部(インナ
ーリード部)に発生したスズホイスカー数を表2に示
す。ここで、スズメッキ厚は螢光x線膜厚計を用い、こ
の場合Cu−Sn拡散層中のSnは測定値に入ることに
なる。また、純スズメッキ厚はコクール膜厚計を用い測
定したが、この場合Cu−Sn拡散層中のSnは測定値
に入らないことになる。
[Example 1] Film carrier (IL number: 152)
As an electroless tin plating solution on top, TINPOSTjLT
-34 (manufactured by Shipley Far East Co., Ltd.) was used, and electroless tin plating was performed at 60 ° C. for 7 minutes.
After annealing at 130 ° C. to 200 ° C. for 1 to 2 hours, electroless tin plating was performed again at 60 ° C. for 1 minute to obtain a sample. These tin plating annealing conditions,
Table 1 shows the tin plating thickness (measured with a fluorescent x-ray film thickness meter, Cocool film thickness meter) and the like, and Table 2 shows the number of tin whiskers generated in the IL part (inner lead part) after 1 to 5 months. Here, for the tin plating thickness, a fluorescent x-ray film thickness meter is used, and in this case, Sn in the Cu—Sn diffusion layer falls within the measured value. Further, the pure tin plating thickness was measured using a Cocool film thickness meter, but in this case, Sn in the Cu—Sn diffusion layer does not enter the measured value.

【0013】[0013]

【表1】 [Table 1]

【0014】[0014]

【表2】 [Table 2]

【0015】上表の結果より、下地スズメッキ後のアニ
ール処理により、メッキ皮膜中に純スズ層が残らないよ
うなメッキ皮膜を作製し(アニール温度180℃以
上)、さらにスズメッキを行ったサンプルからは、スズ
ホイスカーの発生は見られていない(メッキ後5ヶ月経
過)。また、2回目のスズメッキ後のCu−Sn拡散層
厚が厚ければ厚いほど、スズホイスカーの発生を抑える
傾向があることがわかる。これに対し、No.1〜5の
サンプルのように、アニール処理後に純スズ層が残って
しまうと、その後の再スズメッキ後に、ホイスカーが発
生してきていることがわかる。
From the results shown in the above table, a plating film was produced by the annealing treatment after the base tin plating so that the pure tin layer was not left in the plating film (annealing temperature of 180 ° C. or higher), and the tin-plated sample was obtained. No occurrence of tin whiskers (5 months after plating). Further, it is understood that the thicker the Cu—Sn diffusion layer thickness after the second tin plating is, the more the tendency of suppressing the generation of tin whiskers is. On the other hand, No. It can be seen that when the pure tin layer remains after the annealing treatment as in the samples 1 to 5, whiskers are generated after the subsequent retinning.

【0016】[0016]

【実施例2】フィルムキャリアー(IL数、152本)
上に無電解スズメッキ液として、TINPOSTjLT
−34(シプレイ・ファーイースト(株)製)を使用
し、60℃で0.5〜7分間の下地無電解スズメッキを
施した。110℃〜180℃で1時間のアニール処理を
施した後に、再び無電解スズメッキを60℃で1分行
い、サンプルとした。これらスズメッキのアニール処理
条件、スズメッキ厚(螢光x線膜厚計、コクール膜厚計
により測定)等を表3に示し、メッキ直後〜90日後に
IL部に発生したスズホイスカー数を表4に示す。
[Example 2] Film carrier (IL number: 152)
As an electroless tin plating solution on top, TINPOSTjLT
Using -34 (manufactured by Shipley Far East Co., Ltd.), electroless tin plating as a base material was performed at 60 ° C. for 0.5 to 7 minutes. After an annealing treatment at 110 ° C. to 180 ° C. for 1 hour, electroless tin plating was performed again at 60 ° C. for 1 minute to obtain a sample. Table 3 shows the annealing conditions for these tin platings, the tin plating thickness (measured by a fluorescent x-ray film thickness meter, a Cocool film thickness meter), etc. Show.

【0017】[0017]

【表3】 [Table 3]

【0018】[0018]

【表4】 [Table 4]

【0019】この結果、下地スズメッキの厚さが薄くて
も、アニール処理により、メッキ皮膜中に純スズ層が残
らないようなメッキ皮膜を作製し、再スズメッキを行え
ば、メッキ後90日後でもスズホイスカーの発生は見ら
れなかった。これに対し、No.8のサンプルのよう
に、アニール処理後に純スズ層が残ってしまうと、その
後の再スズメッキ後にホイスカーが発生してきているこ
とがわかる。
As a result, even if the thickness of the base tin plating is thin, an annealing treatment is performed to form a plating film that does not leave a pure tin layer in the plating film, and if tin plating is performed again, tin can be used even 90 days after plating. No outbreak of whiskers was seen. On the other hand, No. It can be seen that when the pure tin layer remains after the annealing treatment as in the sample of No. 8, whiskers are generated after the subsequent retinning.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るメッキ処理工程を示す説明図であ
る。
FIG. 1 is an explanatory view showing a plating process according to the present invention.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C25D 7/00 G 6919−4K ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location C25D 7/00 G 6919-4K

Claims (1)

【特許請求の範囲】 【請求項1】 銅又は銅合金の微細パターン上にスズメ
ッキを施すに際し、まず厚さ0.15μm以上のスズメ
ッキを施し、次いで加熱処理して該純スズ層をすべて銅
素地とのCu−Sn拡散層とし、その上にスズメッキを
施し、純スズメッキ厚を0.15〜0.8μmとするこ
とを特徴とするスズメッキホイスカーの抑制方法。
Claim: What is claimed is: 1. When tin plating is applied to a fine pattern of copper or copper alloy, first, tin plating having a thickness of 0.15 μm or more is applied, and then heat treatment is performed to completely convert the pure tin layer to a copper base material. And a tin-plated tin-plated layer having a pure tin plating thickness of 0.15 to 0.8 μm to suppress tin-plated whiskers.
JP3207236A 1991-07-25 1991-07-25 How to control tin plating whiskers Expired - Lifetime JP3014814B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3207236A JP3014814B2 (en) 1991-07-25 1991-07-25 How to control tin plating whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3207236A JP3014814B2 (en) 1991-07-25 1991-07-25 How to control tin plating whiskers

Publications (2)

Publication Number Publication Date
JPH0533187A true JPH0533187A (en) 1993-02-09
JP3014814B2 JP3014814B2 (en) 2000-02-28

Family

ID=16536481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3207236A Expired - Lifetime JP3014814B2 (en) 1991-07-25 1991-07-25 How to control tin plating whiskers

Country Status (1)

Country Link
JP (1) JP3014814B2 (en)

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WO2006008899A1 (en) * 2004-07-21 2006-01-26 Mitsui Mining & Smelting Co., Ltd. Coated copper, method for inhibiting generation of whisker, printed wiring board and semiconductor device
JP2006037227A (en) * 2004-06-25 2006-02-09 Ormecon Gmbh Tin-coated printed circuit board with low tendency to whisker formation
JP2006045665A (en) * 2004-07-08 2006-02-16 Fujikura Ltd Flexible printed wiring board terminal and flexible flat cable terminal
JP2006165426A (en) * 2004-12-10 2006-06-22 Ishihara Chem Co Ltd Method for manufacturing film carrier or the like
JP2007103586A (en) * 2005-10-03 2007-04-19 Nitto Denko Corp Method for manufacturing wiring circuit board
JP2007169759A (en) * 2005-12-26 2007-07-05 Fujikura Ltd Method of measuring residual tin plated layer, flexible printed wiring board terminal part or flexible flat cable terminal part
KR20070090708A (en) * 2006-03-02 2007-09-06 후지쯔 가부시끼가이샤 Plating coated member and plating processing method
US7488408B2 (en) * 2004-07-20 2009-02-10 Panasonic Corporation Tin-plated film and method for producing the same
JP2009141292A (en) * 2007-12-11 2009-06-25 Taiyo Kagaku Kogyo Kk Electronic part having external terminal electrode and electronic supplies material mounted with the same, and method of manufacturing electronic part having external terminal electrode
US7695605B2 (en) * 2003-05-12 2010-04-13 Rohm And Haas Electronic Materials Llc Tin plating method
JP2010126766A (en) * 2008-11-27 2010-06-10 Toyota Motor Corp PLATED BASE MATERIAL HAVING Sn PLATING LAYER AND METHOD OF MANUFACTURING THE SAME
JP2010531550A (en) * 2007-06-28 2010-09-24 アギア システムズ インコーポレーテッド Inhibiting copper dissolution of lead-free solder
US7999187B2 (en) 2008-03-24 2011-08-16 Fujikura Ltd. Plated flat conductor and flexible flat cable therewith
JP2016023347A (en) * 2014-07-23 2016-02-08 イビデン株式会社 Printed-wiring board
CN110592515A (en) * 2019-09-30 2019-12-20 凯美龙精密铜板带(河南)有限公司 Hot-dip tinned copper material and manufacturing method thereof

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135226A (en) * 1997-10-27 1999-05-21 Harness Syst Tech Res Ltd Manufacture of fitting type connecting terminal
US7695605B2 (en) * 2003-05-12 2010-04-13 Rohm And Haas Electronic Materials Llc Tin plating method
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