JPS5918680A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5918680A JPS5918680A JP58115292A JP11529283A JPS5918680A JP S5918680 A JPS5918680 A JP S5918680A JP 58115292 A JP58115292 A JP 58115292A JP 11529283 A JP11529283 A JP 11529283A JP S5918680 A JPS5918680 A JP S5918680A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor device
- dopant
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims description 37
- 239000002019 doping agent Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 19
- 230000000903 blocking effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000013446 pixi Nutrition 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/394,346 US4494134A (en) | 1982-07-01 | 1982-07-01 | High voltage semiconductor devices comprising integral JFET |
| US394346 | 1982-07-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5918680A true JPS5918680A (ja) | 1984-01-31 |
| JPH0347593B2 JPH0347593B2 (en, 2012) | 1991-07-19 |
Family
ID=23558559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58115292A Granted JPS5918680A (ja) | 1982-07-01 | 1983-06-28 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4494134A (en, 2012) |
| EP (1) | EP0098383B1 (en, 2012) |
| JP (1) | JPS5918680A (en, 2012) |
| CA (1) | CA1200323A (en, 2012) |
| DE (1) | DE3368814D1 (en, 2012) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
| JPS5994453A (ja) * | 1982-10-25 | 1984-05-31 | ゼネラル・エレクトリック・カンパニイ | オン抵抗を低減した高圧半導体デバイス |
| US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
| US4573065A (en) * | 1982-12-10 | 1986-02-25 | At&T Bell Laboratories | Radial high voltage switch structure |
| US4862242A (en) * | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
| GB2174540B (en) * | 1985-05-02 | 1989-02-15 | Texas Instruments Ltd | Intergrated circuits |
| US4755697A (en) * | 1985-07-17 | 1988-07-05 | International Rectifier Corporation | Bidirectional output semiconductor field effect transistor |
| US4661838A (en) * | 1985-10-24 | 1987-04-28 | General Electric Company | High voltage semiconductor devices electrically isolated from an integrated circuit substrate |
| US4890150A (en) * | 1985-12-05 | 1989-12-26 | North American Philips Corporation | Dielectric passivation |
| US4733104A (en) * | 1985-12-06 | 1988-03-22 | General Electric Company | Integrated circuit for controlling power converter by frequency modulation and pulse width modulation |
| US4685040A (en) * | 1985-12-06 | 1987-08-04 | General Electric Company | Integrated circuit for controlling power converter by frequency modulation and pulse width modulation |
| US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
| US4868921A (en) * | 1986-09-05 | 1989-09-19 | General Electric Company | High voltage integrated circuit devices electrically isolated from an integrated circuit substrate |
| US4998160A (en) * | 1989-01-23 | 1991-03-05 | Motorola, Inc. | Substrate power supply contact for power integrated circuits |
| US5155568A (en) * | 1989-04-14 | 1992-10-13 | Hewlett-Packard Company | High-voltage semiconductor device |
| US5237262A (en) * | 1991-10-24 | 1993-08-17 | International Business Machines Corporation | Temperature compensated circuit for controlling load current |
| US5543632A (en) * | 1991-10-24 | 1996-08-06 | International Business Machines Corporation | Temperature monitoring pilot transistor |
| US5245261A (en) * | 1991-10-24 | 1993-09-14 | International Business Machines Corporation | Temperature compensated overcurrent and undercurrent detector |
| JPH06188372A (ja) * | 1992-07-20 | 1994-07-08 | Philips Electron Nv | 集積半導体回路 |
| US6242787B1 (en) * | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
| US6831331B2 (en) | 1995-11-15 | 2004-12-14 | Denso Corporation | Power MOS transistor for absorbing surge current |
| DE19917155C1 (de) * | 1999-04-16 | 2000-06-21 | Bosch Gmbh Robert | Schutzvorrichtung gegen elektrostatische Entladungen |
| DE10028008A1 (de) | 2000-06-06 | 2001-12-13 | Bosch Gmbh Robert | Schutzvorrichtung gegen elektrostatische Entladungen |
| US7888768B2 (en) * | 2006-01-09 | 2011-02-15 | Fairchild Korea Semiconductor, Ltd. | Power integrated circuit device having embedded high-side power switch |
| US7882902B2 (en) * | 2006-11-17 | 2011-02-08 | Weatherford/Lamb, Inc. | Top drive interlock |
| JP5764742B2 (ja) * | 2010-05-17 | 2015-08-19 | パナソニックＩｐマネジメント株式会社 | 接合型電界効果トランジスタ、その製造方法及びアナログ回路 |
| US9263438B2 (en) * | 2012-03-22 | 2016-02-16 | Fairchild Semiconductor Corporation | Apparatus related to a diode device including a JFET portion |
| US9006833B2 (en) * | 2013-07-02 | 2015-04-14 | Texas Instruments Incorporated | Bipolar transistor having sinker diffusion under a trench |
| EP3041052A1 (en) * | 2015-01-05 | 2016-07-06 | Ampleon Netherlands B.V. | Semiconductor device comprising a lateral drift vertical bipolar transistor |
| KR20170059706A (ko) | 2015-11-23 | 2017-05-31 | 페어차일드코리아반도체 주식회사 | 전력 반도체 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5224465A (en) * | 1975-08-20 | 1977-02-23 | Sanken Electric Co Ltd | Schottky barrier semiconductor device |
| JPS5320774A (en) * | 1976-08-09 | 1978-02-25 | Philips Nv | Semiconductor device |
| JPS562672A (en) * | 1979-06-20 | 1981-01-12 | Shindengen Electric Mfg Co Ltd | Schottky barrier diode |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
| US4003072A (en) * | 1972-04-20 | 1977-01-11 | Sony Corporation | Semiconductor device with high voltage breakdown resistance |
| US3812405A (en) * | 1973-01-29 | 1974-05-21 | Motorola Inc | Stable thyristor device |
| IT1063522B (it) * | 1976-06-25 | 1985-02-11 | Ates Componenti Elettron | Diodo a semiconduttore con anello collettore per circuito integrato monolitico |
| JPS5367368A (en) * | 1976-11-29 | 1978-06-15 | Sony Corp | Semiconductor device |
| JPS5596675A (en) * | 1979-01-19 | 1980-07-23 | Nec Corp | Semiconductor device |
| JPS568874A (en) * | 1979-07-04 | 1981-01-29 | Pioneer Electronic Corp | Bipolar transistor device |
-
1982
- 1982-07-01 US US06/394,346 patent/US4494134A/en not_active Expired - Lifetime
-
1983
- 1983-05-26 EP EP83105240A patent/EP0098383B1/en not_active Expired
- 1983-05-26 DE DE8383105240T patent/DE3368814D1/de not_active Expired
- 1983-06-24 CA CA000431145A patent/CA1200323A/en not_active Expired
- 1983-06-28 JP JP58115292A patent/JPS5918680A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5224465A (en) * | 1975-08-20 | 1977-02-23 | Sanken Electric Co Ltd | Schottky barrier semiconductor device |
| JPS5320774A (en) * | 1976-08-09 | 1978-02-25 | Philips Nv | Semiconductor device |
| JPS562672A (en) * | 1979-06-20 | 1981-01-12 | Shindengen Electric Mfg Co Ltd | Schottky barrier diode |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3368814D1 (en) | 1987-02-05 |
| EP0098383A1 (en) | 1984-01-18 |
| US4494134A (en) | 1985-01-15 |
| CA1200323A (en) | 1986-02-04 |
| EP0098383B1 (en) | 1986-12-30 |
| JPH0347593B2 (en, 2012) | 1991-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5918680A (ja) | 半導体装置 | |
| TW306056B (en, 2012) | ||
| CN103367412B (zh) | 反向导通绝缘栅双极型晶体管 | |
| JPS63127572A (ja) | 電導度変調形ｍｏｓｆｅｔ | |
| CN117096190A (zh) | 具有高dv/dt能力的功率开关装置及制造这种装置的方法 | |
| EP0338312B1 (en) | Insulated gate bipolar transistor | |
| US20220157976A1 (en) | Semiconductor device and semiconductor apparatus | |
| US5936267A (en) | Insulated gate thyristor | |
| US4982245A (en) | Compound diode assembly of reduced leakage current | |
| US6426266B1 (en) | Manufacturing method for an inverted-structure bipolar transistor with improved high-frequency characteristics | |
| JPS60263461A (ja) | 高耐圧縦形トランジスタ装置およびその製造方法 | |
| JP2001522540A (ja) | クロスカレント防止のための構造を有する半導体構成素子 | |
| JPS61123184A (ja) | 導電変調型ｍｏｓｆｅｔ | |
| JPH05136015A (ja) | 半導体装置 | |
| CN118522751B (zh) | 功率半导体器件及其制作方法 | |
| JPS62177968A (ja) | ゲ−トタ−ンオフサイリスタ | |
| JPH0281476A (ja) | Ｍｏｓ型半導体装置 | |
| JPH0416443Y2 (en, 2012) | ||
| JPS61187271A (ja) | ヘテロ接合型バイポ−ラトランジスタ | |
| JP2009141071A (ja) | 静電気保護用半導体素子 | |
| JPH02202063A (ja) | 半導体装置 | |
| JP3395282B2 (ja) | 定電圧発生装置 | |
| JPS6252967A (ja) | Ｇｔｏサイリスタ | |
| JPS621262B2 (en, 2012) | ||
| JPH06326300A (ja) | 半導体装置およびその製造方法 |