JPH0347593B2 - - Google Patents

Info

Publication number
JPH0347593B2
JPH0347593B2 JP58115292A JP11529283A JPH0347593B2 JP H0347593 B2 JPH0347593 B2 JP H0347593B2 JP 58115292 A JP58115292 A JP 58115292A JP 11529283 A JP11529283 A JP 11529283A JP H0347593 B2 JPH0347593 B2 JP H0347593B2
Authority
JP
Japan
Prior art keywords
region
layer
diode
semiconductor device
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58115292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5918680A (ja
Inventor
Josefu Uirudei Eritsuku
Suchuaato Adoraa Mitsusheru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5918680A publication Critical patent/JPS5918680A/ja
Publication of JPH0347593B2 publication Critical patent/JPH0347593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP58115292A 1982-07-01 1983-06-28 半導体装置 Granted JPS5918680A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/394,346 US4494134A (en) 1982-07-01 1982-07-01 High voltage semiconductor devices comprising integral JFET
US394346 1982-07-01

Publications (2)

Publication Number Publication Date
JPS5918680A JPS5918680A (ja) 1984-01-31
JPH0347593B2 true JPH0347593B2 (en, 2012) 1991-07-19

Family

ID=23558559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58115292A Granted JPS5918680A (ja) 1982-07-01 1983-06-28 半導体装置

Country Status (5)

Country Link
US (1) US4494134A (en, 2012)
EP (1) EP0098383B1 (en, 2012)
JP (1) JPS5918680A (en, 2012)
CA (1) CA1200323A (en, 2012)
DE (1) DE3368814D1 (en, 2012)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
JPS5994453A (ja) * 1982-10-25 1984-05-31 ゼネラル・エレクトリック・カンパニイ オン抵抗を低減した高圧半導体デバイス
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
GB2174540B (en) * 1985-05-02 1989-02-15 Texas Instruments Ltd Intergrated circuits
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4890150A (en) * 1985-12-05 1989-12-26 North American Philips Corporation Dielectric passivation
US4733104A (en) * 1985-12-06 1988-03-22 General Electric Company Integrated circuit for controlling power converter by frequency modulation and pulse width modulation
US4685040A (en) * 1985-12-06 1987-08-04 General Electric Company Integrated circuit for controlling power converter by frequency modulation and pulse width modulation
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
US5155568A (en) * 1989-04-14 1992-10-13 Hewlett-Packard Company High-voltage semiconductor device
US5237262A (en) * 1991-10-24 1993-08-17 International Business Machines Corporation Temperature compensated circuit for controlling load current
US5543632A (en) * 1991-10-24 1996-08-06 International Business Machines Corporation Temperature monitoring pilot transistor
US5245261A (en) * 1991-10-24 1993-09-14 International Business Machines Corporation Temperature compensated overcurrent and undercurrent detector
JPH06188372A (ja) * 1992-07-20 1994-07-08 Philips Electron Nv 集積半導体回路
US6242787B1 (en) * 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
DE19917155C1 (de) * 1999-04-16 2000-06-21 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
DE10028008A1 (de) 2000-06-06 2001-12-13 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
US7888768B2 (en) * 2006-01-09 2011-02-15 Fairchild Korea Semiconductor, Ltd. Power integrated circuit device having embedded high-side power switch
US7882902B2 (en) * 2006-11-17 2011-02-08 Weatherford/Lamb, Inc. Top drive interlock
JP5764742B2 (ja) * 2010-05-17 2015-08-19 パナソニックＩｐマネジメント株式会社 接合型電界効果トランジスタ、その製造方法及びアナログ回路
US9263438B2 (en) * 2012-03-22 2016-02-16 Fairchild Semiconductor Corporation Apparatus related to a diode device including a JFET portion
US9006833B2 (en) * 2013-07-02 2015-04-14 Texas Instruments Incorporated Bipolar transistor having sinker diffusion under a trench
EP3041052A1 (en) * 2015-01-05 2016-07-06 Ampleon Netherlands B.V. Semiconductor device comprising a lateral drift vertical bipolar transistor
KR20170059706A (ko) 2015-11-23 2017-05-31 페어차일드코리아반도체 주식회사 전력 반도체 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
US3812405A (en) * 1973-01-29 1974-05-21 Motorola Inc Stable thyristor device
JPS5935183B2 (ja) * 1975-08-20 1984-08-27 サンケイ電気 （株） シヨツトキバリア半導体装置
IT1063522B (it) * 1976-06-25 1985-02-11 Ates Componenti Elettron Diodo a semiconduttore con anello collettore per circuito integrato monolitico
GB1558506A (en) * 1976-08-09 1980-01-03 Mullard Ltd Semiconductor devices having a rectifying metalto-semicondductor junction
JPS5367368A (en) * 1976-11-29 1978-06-15 Sony Corp Semiconductor device
JPS5596675A (en) * 1979-01-19 1980-07-23 Nec Corp Semiconductor device
JPS562672A (en) * 1979-06-20 1981-01-12 Shindengen Electric Mfg Co Ltd Schottky barrier diode
JPS568874A (en) * 1979-07-04 1981-01-29 Pioneer Electronic Corp Bipolar transistor device

Also Published As

Publication number Publication date
DE3368814D1 (en) 1987-02-05
EP0098383A1 (en) 1984-01-18
US4494134A (en) 1985-01-15
CA1200323A (en) 1986-02-04
EP0098383B1 (en) 1986-12-30
JPS5918680A (ja) 1984-01-31

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