JPH037149B2 - - Google Patents

Info

Publication number
JPH037149B2
JPH037149B2 JP57212823A JP21282382A JPH037149B2 JP H037149 B2 JPH037149 B2 JP H037149B2 JP 57212823 A JP57212823 A JP 57212823A JP 21282382 A JP21282382 A JP 21282382A JP H037149 B2 JPH037149 B2 JP H037149B2
Authority
JP
Japan
Prior art keywords
region
transistor
source
source region
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57212823A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58106872A (ja
Inventor
Jeemusu Koe Debitsudo
Roisu Roisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS58106872A publication Critical patent/JPS58106872A/ja
Publication of JPH037149B2 publication Critical patent/JPH037149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/156—LDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
JP57212823A 1981-12-07 1982-12-06 絶縁ゲート電界効果トランジスタ Granted JPS58106872A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08136819A GB2111745B (en) 1981-12-07 1981-12-07 Insulated-gate field-effect transistors
GB8136819 1981-12-07

Publications (2)

Publication Number Publication Date
JPS58106872A JPS58106872A (ja) 1983-06-25
JPH037149B2 true JPH037149B2 (en, 2012) 1991-01-31

Family

ID=10526418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57212823A Granted JPS58106872A (ja) 1981-12-07 1982-12-06 絶縁ゲート電界効果トランジスタ

Country Status (5)

Country Link
US (1) US4521795A (en, 2012)
EP (1) EP0081269B1 (en, 2012)
JP (1) JPS58106872A (en, 2012)
DE (1) DE3275887D1 (en, 2012)
GB (1) GB2111745B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3252533A1 (en) 2004-02-04 2017-12-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59158551A (ja) 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置及びその駆動方法
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
GB2150753B (en) * 1983-11-30 1987-04-01 Toshiba Kk Semiconductor device
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS60154552A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp 電力用半導体装置
JPS6149474A (ja) * 1984-08-17 1986-03-11 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
JPS6151879A (ja) * 1984-08-21 1986-03-14 Matsushita Electronics Corp 縦型ｍｏｓ・ｆｅｔ
US4694313A (en) * 1985-02-19 1987-09-15 Harris Corporation Conductivity modulated semiconductor structure
IT1185258B (it) * 1985-07-16 1987-11-04 Sgs Microelettronica Spa Elemento di pilotaggio per carichi induttivi
US4952992A (en) * 1987-08-18 1990-08-28 Siliconix Incorporated Method and apparatus for improving the on-voltage characteristics of a semiconductor device
JPH01220475A (ja) * 1988-02-29 1989-09-04 Shindengen Electric Mfg Co Ltd 絶縁ゲート型電界効果トランジスタ
JPH027571A (ja) * 1988-06-27 1990-01-11 Nissan Motor Co Ltd 半導体装置
US4969027A (en) * 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
US5111253A (en) * 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
JP2809826B2 (ja) * 1990-06-29 1998-10-15 三菱電機株式会社 半導体装置の製造方法
US5164802A (en) * 1991-03-20 1992-11-17 Harris Corporation Power vdmosfet with schottky on lightly doped drain of lateral driver fet
JPH0737711Y2 (ja) * 1991-05-23 1995-08-30 富士車輌株式会社 ごみ破砕機用の破砕ロータ
US5477077A (en) * 1992-04-17 1995-12-19 Fuji Electric Co., Ltd. Semiconductor device and a method for the manufacture thereof
KR0125113B1 (ko) * 1993-02-02 1997-12-11 모리시타 요이찌 불휘발성 반도체 메모리 집적장치 및 그 제조방법
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
FR2735617B1 (fr) * 1995-06-16 1997-08-22 Sgs Thomson Microelectronics Cellule fonctionnelle a transistor mos et diode rapide integree
US5886383A (en) * 1997-01-10 1999-03-23 International Rectifier Corporation Integrated schottky diode and mosgated device
DE69806484D1 (de) 1998-11-17 2002-08-14 St Microelectronics Srl Methode zur Herstellung von einem MOSFET mit einem vertikalen Kanal
US7229872B2 (en) * 2000-04-04 2007-06-12 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
EP1204145B1 (en) 2000-10-23 2011-12-28 Panasonic Corporation Semiconductor element
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
GB0118000D0 (en) * 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
GB0202437D0 (en) * 2002-02-02 2002-03-20 Koninkl Philips Electronics Nv Cellular mosfet devices and their manufacture
CN101019236A (zh) * 2004-07-15 2007-08-15 斯平内克半导体股份有限公司 金属源极功率晶体管及其制造方法
US7667264B2 (en) * 2004-09-27 2010-02-23 Alpha And Omega Semiconductor Limited Shallow source MOSFET
US8283723B2 (en) * 2005-02-11 2012-10-09 Alpha & Omega Semiconductor Limited MOS device with low injection diode
US7285822B2 (en) 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
US8362547B2 (en) 2005-02-11 2013-01-29 Alpha & Omega Semiconductor Limited MOS device with Schottky barrier controlling layer
US7948029B2 (en) 2005-02-11 2011-05-24 Alpha And Omega Semiconductor Incorporated MOS device with varying trench depth
US8093651B2 (en) * 2005-02-11 2012-01-10 Alpha & Omega Semiconductor Limited MOS device with integrated schottky diode in active region contact trench
US8803225B2 (en) * 2012-01-12 2014-08-12 Tsinghua University Tunneling field effect transistor having a lightly doped buried layer
KR101999407B1 (ko) 2013-05-23 2019-10-02 매그나칩 반도체 유한회사 쇼트키 다이오드 내장 반도체 소자 및 그 제조 방법
US9847233B2 (en) 2014-07-29 2017-12-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and formation thereof
EP3151283A1 (en) * 2015-09-29 2017-04-05 Nexperia B.V. Vertical dmos bjt semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590471A (en) * 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation
DK157272C (da) * 1978-10-13 1990-04-30 Int Rectifier Corp Mosfet med hoej effekt
FR2458907A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Transistor a effet de champ a tension de seuil ajustable
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4319144A (en) * 1980-05-22 1982-03-09 Bell Telephone Laboratories, Incorporated Single polarity circuit
DE3131914A1 (de) * 1981-08-12 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Leistungs-mos-feldeffekttransistor und verfahren zu seiner herstellung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3252533A1 (en) 2004-02-04 2017-12-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device

Also Published As

Publication number Publication date
DE3275887D1 (en) 1987-04-30
US4521795A (en) 1985-06-04
EP0081269B1 (en) 1987-03-25
GB2111745A (en) 1983-07-06
EP0081269A2 (en) 1983-06-15
JPS58106872A (ja) 1983-06-25
GB2111745B (en) 1985-06-19
EP0081269A3 (en) 1984-12-27

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