JPS59186326A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS59186326A
JPS59186326A JP58059232A JP5923283A JPS59186326A JP S59186326 A JPS59186326 A JP S59186326A JP 58059232 A JP58059232 A JP 58059232A JP 5923283 A JP5923283 A JP 5923283A JP S59186326 A JPS59186326 A JP S59186326A
Authority
JP
Japan
Prior art keywords
chamber
dry etching
plasma
dry
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58059232A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522379B2 (enExample
Inventor
Minoru Noguchi
稔 野口
Toru Otsubo
徹 大坪
Susumu Aiuchi
進 相内
Takashi Kamimura
隆 上村
Teru Fujii
藤井　輝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58059232A priority Critical patent/JPS59186326A/ja
Priority to US06/597,749 priority patent/US4487678A/en
Publication of JPS59186326A publication Critical patent/JPS59186326A/ja
Publication of JPH0522379B2 publication Critical patent/JPH0522379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP58059232A 1983-04-06 1983-04-06 プラズマ処理装置 Granted JPS59186326A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58059232A JPS59186326A (ja) 1983-04-06 1983-04-06 プラズマ処理装置
US06/597,749 US4487678A (en) 1983-04-06 1984-04-06 Dry-etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58059232A JPS59186326A (ja) 1983-04-06 1983-04-06 プラズマ処理装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP7280456A Division JP2701811B2 (ja) 1995-10-27 1995-10-27 プラズマ処理方法及びその装置
JP7280455A Division JP2701810B2 (ja) 1995-10-27 1995-10-27 プラズマ処理方法及びその装置

Publications (2)

Publication Number Publication Date
JPS59186326A true JPS59186326A (ja) 1984-10-23
JPH0522379B2 JPH0522379B2 (enExample) 1993-03-29

Family

ID=13107426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58059232A Granted JPS59186326A (ja) 1983-04-06 1983-04-06 プラズマ処理装置

Country Status (2)

Country Link
US (1) US4487678A (enExample)
JP (1) JPS59186326A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218032A (ja) * 1985-07-17 1987-01-27 Fujitsu Ltd 半導体装置の製造方法
JPS63233533A (ja) * 1987-03-23 1988-09-29 Anelva Corp プラズマ処理装置
JPH0382121A (ja) * 1989-08-25 1991-04-08 Nec Corp ドライエッチングの後処理方法
JPH03280535A (ja) * 1990-03-29 1991-12-11 Nec Corp ドライエッチング装置
JPH07254589A (ja) * 1995-01-30 1995-10-03 Hitachi Ltd 試料の後処理方法
US6486073B1 (en) 1986-05-29 2002-11-26 Fujitsu Limited Method for stripping a photo resist on an aluminum alloy

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4624728A (en) * 1985-06-11 1986-11-25 Tegal Corporation Pin lift plasma processing
DE3650697T2 (de) * 1985-10-24 1999-04-15 Texas Instruments Inc., Dallas, Tex. Wafertransferarm und Wafertransfermethode
US4902531A (en) * 1986-10-30 1990-02-20 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
US4861563A (en) * 1987-05-14 1989-08-29 Spectrum Cvd, Inc. Vacuum load lock
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
US6989228B2 (en) 1989-02-27 2006-01-24 Hitachi, Ltd Method and apparatus for processing samples
US6077788A (en) * 1989-02-27 2000-06-20 Hitachi, Ltd. Method and apparatus for processing samples
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
US5200017A (en) * 1989-02-27 1993-04-06 Hitachi, Ltd. Sample processing method and apparatus
JP2926798B2 (ja) * 1989-11-20 1999-07-28 国際電気株式会社 連続処理エッチング方法及びその装置
US5100502A (en) * 1990-03-19 1992-03-31 Applied Materials, Inc. Semiconductor wafer transfer in processing systems
US5462629A (en) * 1992-08-28 1995-10-31 Kawasaki Steel Corp. Surface processing apparatus using neutral beam
JP2836529B2 (ja) * 1995-04-27 1998-12-14 日本電気株式会社 半導体装置の製造方法
US5672239A (en) * 1995-05-10 1997-09-30 Tegal Corporation Integrated semiconductor wafer processing system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544794A (en) * 1978-09-25 1980-03-29 Ibm Method of stabilizing aluminum conductor circuit
JPS5713743A (en) * 1980-06-30 1982-01-23 Toshiba Corp Plasma etching apparatus and etching method
JPS5831532A (ja) * 1981-08-18 1983-02-24 Nec Corp プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331526A (en) * 1979-09-24 1982-05-25 Coulter Systems Corporation Continuous sputtering apparatus and method
JPS5729577A (en) * 1980-07-30 1982-02-17 Anelva Corp Automatic continuous sputtering apparatus
US4322277A (en) * 1980-11-17 1982-03-30 Rca Corporation Step mask for substrate sputtering
US4422916A (en) * 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544794A (en) * 1978-09-25 1980-03-29 Ibm Method of stabilizing aluminum conductor circuit
JPS5713743A (en) * 1980-06-30 1982-01-23 Toshiba Corp Plasma etching apparatus and etching method
JPS5831532A (ja) * 1981-08-18 1983-02-24 Nec Corp プラズマ処理装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218032A (ja) * 1985-07-17 1987-01-27 Fujitsu Ltd 半導体装置の製造方法
US6486073B1 (en) 1986-05-29 2002-11-26 Fujitsu Limited Method for stripping a photo resist on an aluminum alloy
JPS63233533A (ja) * 1987-03-23 1988-09-29 Anelva Corp プラズマ処理装置
JPH0382121A (ja) * 1989-08-25 1991-04-08 Nec Corp ドライエッチングの後処理方法
JPH03280535A (ja) * 1990-03-29 1991-12-11 Nec Corp ドライエッチング装置
JPH07254589A (ja) * 1995-01-30 1995-10-03 Hitachi Ltd 試料の後処理方法

Also Published As

Publication number Publication date
JPH0522379B2 (enExample) 1993-03-29
US4487678A (en) 1984-12-11

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