JPS59181673A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59181673A
JPS59181673A JP58055840A JP5584083A JPS59181673A JP S59181673 A JPS59181673 A JP S59181673A JP 58055840 A JP58055840 A JP 58055840A JP 5584083 A JP5584083 A JP 5584083A JP S59181673 A JPS59181673 A JP S59181673A
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
region
film
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58055840A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0472383B2 (enExample
Inventor
Masahiko Takigawa
正彦 滝川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58055840A priority Critical patent/JPS59181673A/ja
Publication of JPS59181673A publication Critical patent/JPS59181673A/ja
Publication of JPH0472383B2 publication Critical patent/JPH0472383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58055840A 1983-03-31 1983-03-31 半導体装置 Granted JPS59181673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58055840A JPS59181673A (ja) 1983-03-31 1983-03-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58055840A JPS59181673A (ja) 1983-03-31 1983-03-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS59181673A true JPS59181673A (ja) 1984-10-16
JPH0472383B2 JPH0472383B2 (enExample) 1992-11-18

Family

ID=13010192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58055840A Granted JPS59181673A (ja) 1983-03-31 1983-03-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS59181673A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185042A (ja) * 1989-01-11 1990-07-19 Nec Corp 電界効果トランジスタ及びその製造方法
JPH08115925A (ja) * 1994-10-13 1996-05-07 Nec Corp 電界効果型トランジスタ及びその製造方法
US6144049A (en) * 1997-02-05 2000-11-07 Nec Corporation Field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128070A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect transistor
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128070A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect transistor
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185042A (ja) * 1989-01-11 1990-07-19 Nec Corp 電界効果トランジスタ及びその製造方法
JPH08115925A (ja) * 1994-10-13 1996-05-07 Nec Corp 電界効果型トランジスタ及びその製造方法
US6144049A (en) * 1997-02-05 2000-11-07 Nec Corporation Field effect transistor
US6184547B1 (en) 1997-02-05 2001-02-06 Nec Corporation Field effect transistor and method of fabricating the same
US6448119B1 (en) 1997-02-05 2002-09-10 Nec Corporation Field effect transistor and method of fabricating the same

Also Published As

Publication number Publication date
JPH0472383B2 (enExample) 1992-11-18

Similar Documents

Publication Publication Date Title
JP3716906B2 (ja) 電界効果トランジスタ
JPH08241983A (ja) 耐熱ゲート・ヘテロ構造電界効果トランジスタおよびその方法
JPS6353710B2 (enExample)
JP3377022B2 (ja) ヘテロ接合型電界効果トランジスタの製造方法
JP2689057B2 (ja) 静電誘導型半導体装置
JPS59181673A (ja) 半導体装置
JP3368449B2 (ja) 半導体装置及びその製造方法
JPS61147577A (ja) 相補型半導体装置
JP2701583B2 (ja) トンネルトランジスタ及びその製造方法
JPH0523497B2 (enExample)
JPH08264760A (ja) ヘテロ接合電界効果型トランジスタとその製造方法
JP3256941B2 (ja) 化合物半導体の表面処理方法
JP3343194B2 (ja) ヘテロ接合型電界効果トランジスタとその製造方法
JPH0194676A (ja) 半導体装置及びその製造方法
JPS6115375A (ja) ヘテロ接合電界効果トランジスタ
JPS6357946B2 (enExample)
JPH02237040A (ja) 半導体装置
JPS62200771A (ja) 半導体装置とその製造方法
JPH05283439A (ja) 半導体装置
JP2817726B2 (ja) トンネルトランジスタ及びその製造方法
JP3383057B2 (ja) 半導体装置
JPH03179782A (ja) 電界効果型トランジスタ
JP2002100640A (ja) 電界効果型化合物半導体装置
JPS6068661A (ja) 半導体装置
JPH05235057A (ja) 半導体装置