JPH0472383B2 - - Google Patents

Info

Publication number
JPH0472383B2
JPH0472383B2 JP58055840A JP5584083A JPH0472383B2 JP H0472383 B2 JPH0472383 B2 JP H0472383B2 JP 58055840 A JP58055840 A JP 58055840A JP 5584083 A JP5584083 A JP 5584083A JP H0472383 B2 JPH0472383 B2 JP H0472383B2
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
aluminum gallium
algaas
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58055840A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59181673A (ja
Inventor
Masahiko Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58055840A priority Critical patent/JPS59181673A/ja
Publication of JPS59181673A publication Critical patent/JPS59181673A/ja
Publication of JPH0472383B2 publication Critical patent/JPH0472383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58055840A 1983-03-31 1983-03-31 半導体装置 Granted JPS59181673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58055840A JPS59181673A (ja) 1983-03-31 1983-03-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58055840A JPS59181673A (ja) 1983-03-31 1983-03-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS59181673A JPS59181673A (ja) 1984-10-16
JPH0472383B2 true JPH0472383B2 (enExample) 1992-11-18

Family

ID=13010192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58055840A Granted JPS59181673A (ja) 1983-03-31 1983-03-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS59181673A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513290B2 (ja) * 1989-01-11 1996-07-03 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP2687897B2 (ja) * 1994-10-13 1997-12-08 日本電気株式会社 電界効果型トランジスタ及びその製造方法
JPH10223651A (ja) 1997-02-05 1998-08-21 Nec Corp 電界効果トランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128070A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect transistor
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Also Published As

Publication number Publication date
JPS59181673A (ja) 1984-10-16

Similar Documents

Publication Publication Date Title
US11031399B2 (en) Semiconductor device and manufacturing method of the same
EP1210736B1 (en) Method of forming a double recessed transistor
US6140169A (en) Method for manufacturing field effect transistor
WO2001061733A2 (en) Double recessed transistor
US10727312B2 (en) Nitride semiconductor device and method for manufacturing the same
JPH10223901A (ja) 電界効果型トランジスタおよびその製造方法
JPH03266439A (ja) ３―５族化合物半導体ヘテロ構造基板および３―５族化合物ヘテロ構造半導体装置
JP4134575B2 (ja) 半導体装置およびその製造方法
JP3951743B2 (ja) 半導体装置およびその製造方法
JPH08241983A (ja) 耐熱ゲート・ヘテロ構造電界効果トランジスタおよびその方法
JP3086748B2 (ja) 高電子移動度トランジスタ
JPS6353710B2 (enExample)
EP0151309B1 (en) High electron mobility field-effect transistor
JPH0324782B2 (enExample)
CN112582470A (zh) 一种常闭型高电子迁移率晶体管及制造方法
CN116581143A (zh) 一种增强型hemt器件及其制备方法和应用
JPH10308351A (ja) 化合物半導体装置及びその製造方法
JPH0472383B2 (enExample)
JPS6354228B2 (enExample)
JP7743873B2 (ja) 電界効果トランジスタの作製方法
JP3256941B2 (ja) 化合物半導体の表面処理方法
JP2668418B2 (ja) 半導体装置
TW202345402A (zh) 半導體裝置
JPH0817241B2 (ja) 細線電界効果トランジスタ及びその製造方法
JPH05283439A (ja) 半導体装置