JPS59178763A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS59178763A
JPS59178763A JP58052915A JP5291583A JPS59178763A JP S59178763 A JPS59178763 A JP S59178763A JP 58052915 A JP58052915 A JP 58052915A JP 5291583 A JP5291583 A JP 5291583A JP S59178763 A JPS59178763 A JP S59178763A
Authority
JP
Japan
Prior art keywords
line
power supply
integrated circuit
circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58052915A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0441504B2 (enrdf_load_stackoverflow
Inventor
Haruyuki Tago
田胡　治之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58052915A priority Critical patent/JPS59178763A/ja
Publication of JPS59178763A publication Critical patent/JPS59178763A/ja
Publication of JPH0441504B2 publication Critical patent/JPH0441504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58052915A 1983-03-29 1983-03-29 半導体集積回路 Granted JPS59178763A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052915A JPS59178763A (ja) 1983-03-29 1983-03-29 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052915A JPS59178763A (ja) 1983-03-29 1983-03-29 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS59178763A true JPS59178763A (ja) 1984-10-11
JPH0441504B2 JPH0441504B2 (enrdf_load_stackoverflow) 1992-07-08

Family

ID=12928121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052915A Granted JPS59178763A (ja) 1983-03-29 1983-03-29 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS59178763A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143556A (ja) * 1988-11-25 1990-06-01 Nec Corp バッファ回路
US5153452A (en) * 1988-08-31 1992-10-06 Hitachi Ltd. Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153452A (en) * 1988-08-31 1992-10-06 Hitachi Ltd. Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator
JPH02143556A (ja) * 1988-11-25 1990-06-01 Nec Corp バッファ回路

Also Published As

Publication number Publication date
JPH0441504B2 (enrdf_load_stackoverflow) 1992-07-08

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