JPS59168659A - 集積回路用リ−ドフレ−ム - Google Patents

集積回路用リ−ドフレ−ム

Info

Publication number
JPS59168659A
JPS59168659A JP58042890A JP4289083A JPS59168659A JP S59168659 A JPS59168659 A JP S59168659A JP 58042890 A JP58042890 A JP 58042890A JP 4289083 A JP4289083 A JP 4289083A JP S59168659 A JPS59168659 A JP S59168659A
Authority
JP
Japan
Prior art keywords
lead frame
alloy
plating
less
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58042890A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6349382B2 (enrdf_load_html_response
Inventor
Shoji Shiga
志賀　章二
Akira Matsuda
晃 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP58042890A priority Critical patent/JPS59168659A/ja
Publication of JPS59168659A publication Critical patent/JPS59168659A/ja
Publication of JPS6349382B2 publication Critical patent/JPS6349382B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP58042890A 1983-03-15 1983-03-15 集積回路用リ−ドフレ−ム Granted JPS59168659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58042890A JPS59168659A (ja) 1983-03-15 1983-03-15 集積回路用リ−ドフレ−ム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58042890A JPS59168659A (ja) 1983-03-15 1983-03-15 集積回路用リ−ドフレ−ム

Publications (2)

Publication Number Publication Date
JPS59168659A true JPS59168659A (ja) 1984-09-22
JPS6349382B2 JPS6349382B2 (enrdf_load_html_response) 1988-10-04

Family

ID=12648623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58042890A Granted JPS59168659A (ja) 1983-03-15 1983-03-15 集積回路用リ−ドフレ−ム

Country Status (1)

Country Link
JP (1) JPS59168659A (enrdf_load_html_response)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0250146A1 (en) * 1986-06-16 1987-12-23 Texas Instruments Incorporated Palladium plated lead frame for integrated circuit
JPH04211153A (ja) * 1990-02-26 1992-08-03 Hitachi Ltd 半導体パッケージ及びそれに用いるリードフレーム
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
US6150712A (en) * 1998-01-09 2000-11-21 Sony Corporation Lead frame for semiconductor device, and semiconductor device
JP2001152122A (ja) * 1999-11-22 2001-06-05 Sumitomo Bakelite Co Ltd 導電性樹脂ペースト及びこれを用いた半導体装置
US6245448B1 (en) * 1988-03-28 2001-06-12 Texas Instruments Incorporated Lead frame with reduced corrosion
US6261402B1 (en) 1997-10-24 2001-07-17 Sony Corporation Planar type lens manufacturing method
US6521358B1 (en) * 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
US7285845B2 (en) 2005-04-15 2007-10-23 Samsung Techwin Co., Ltd. Lead frame for semiconductor package
DE4431847C5 (de) * 1994-09-07 2011-01-27 Atotech Deutschland Gmbh Substrat mit bondfähiger Beschichtung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057067A (ja) * 2003-08-05 2005-03-03 Renesas Technology Corp 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219076A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor package

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5219076A (en) * 1975-08-05 1977-01-14 Fujitsu Ltd Production method of semiconductor package

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0250146A1 (en) * 1986-06-16 1987-12-23 Texas Instruments Incorporated Palladium plated lead frame for integrated circuit
US6245448B1 (en) * 1988-03-28 2001-06-12 Texas Instruments Incorporated Lead frame with reduced corrosion
JPH04211153A (ja) * 1990-02-26 1992-08-03 Hitachi Ltd 半導体パッケージ及びそれに用いるリードフレーム
DE4431847C5 (de) * 1994-09-07 2011-01-27 Atotech Deutschland Gmbh Substrat mit bondfähiger Beschichtung
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
US6521358B1 (en) * 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
US6261402B1 (en) 1997-10-24 2001-07-17 Sony Corporation Planar type lens manufacturing method
US6150712A (en) * 1998-01-09 2000-11-21 Sony Corporation Lead frame for semiconductor device, and semiconductor device
JP2001152122A (ja) * 1999-11-22 2001-06-05 Sumitomo Bakelite Co Ltd 導電性樹脂ペースト及びこれを用いた半導体装置
US7285845B2 (en) 2005-04-15 2007-10-23 Samsung Techwin Co., Ltd. Lead frame for semiconductor package
KR100819800B1 (ko) 2005-04-15 2008-04-07 삼성테크윈 주식회사 반도체 패키지용 리드 프레임

Also Published As

Publication number Publication date
JPS6349382B2 (enrdf_load_html_response) 1988-10-04

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