JPS59163858A - GaAs論理集積回路 - Google Patents
GaAs論理集積回路Info
- Publication number
- JPS59163858A JPS59163858A JP58037501A JP3750183A JPS59163858A JP S59163858 A JPS59163858 A JP S59163858A JP 58037501 A JP58037501 A JP 58037501A JP 3750183 A JP3750183 A JP 3750183A JP S59163858 A JPS59163858 A JP S59163858A
- Authority
- JP
- Japan
- Prior art keywords
- gaasfet
- dfet
- source
- turned
- efet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- 230000000630 rising effect Effects 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 230000000295 complement effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 101710130024 1-aminocyclopropane-1-carboxylate oxidase Proteins 0.000 description 1
- 101710098417 1-aminocyclopropane-1-carboxylate oxidase 1 Proteins 0.000 description 1
- 101710098416 1-aminocyclopropane-1-carboxylate oxidase 2 Proteins 0.000 description 1
- 101710098415 1-aminocyclopropane-1-carboxylate oxidase 3 Proteins 0.000 description 1
- 101710098411 1-aminocyclopropane-1-carboxylate oxidase 4 Proteins 0.000 description 1
- 101710163931 2-oxoglutarate-dependent ethylene/succinate-forming enzyme Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58037501A JPS59163858A (ja) | 1983-03-09 | 1983-03-09 | GaAs論理集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58037501A JPS59163858A (ja) | 1983-03-09 | 1983-03-09 | GaAs論理集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59163858A true JPS59163858A (ja) | 1984-09-14 |
| JPH0347778B2 JPH0347778B2 (enExample) | 1991-07-22 |
Family
ID=12499269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58037501A Granted JPS59163858A (ja) | 1983-03-09 | 1983-03-09 | GaAs論理集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59163858A (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546760A (en) * | 1977-06-17 | 1979-01-19 | Fujitsu Ltd | Logic circuit |
| JPS55111179A (en) * | 1979-02-13 | 1980-08-27 | Thomson Csf | Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit |
-
1983
- 1983-03-09 JP JP58037501A patent/JPS59163858A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546760A (en) * | 1977-06-17 | 1979-01-19 | Fujitsu Ltd | Logic circuit |
| JPS55111179A (en) * | 1979-02-13 | 1980-08-27 | Thomson Csf | Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0347778B2 (enExample) | 1991-07-22 |
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