JPS5916346A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5916346A JPS5916346A JP57126418A JP12641882A JPS5916346A JP S5916346 A JPS5916346 A JP S5916346A JP 57126418 A JP57126418 A JP 57126418A JP 12641882 A JP12641882 A JP 12641882A JP S5916346 A JPS5916346 A JP S5916346A
- Authority
- JP
- Japan
- Prior art keywords
- film
- psg film
- flow
- psg
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126418A JPS5916346A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126418A JPS5916346A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5916346A true JPS5916346A (ja) | 1984-01-27 |
| JPS643343B2 JPS643343B2 (enExample) | 1989-01-20 |
Family
ID=14934676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57126418A Granted JPS5916346A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916346A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037132A (ja) * | 1983-08-09 | 1985-02-26 | Ushio Inc | 燐硅酸ガラスもしくは燐硼素硅酸ガラスの流動化法 |
| JPS61263159A (ja) * | 1985-03-15 | 1986-11-21 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | 集積回路用の高温相互接続方式 |
| EP0794563A3 (en) * | 1996-03-06 | 1997-09-17 | Nec Corporation | Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer and process of fabrication thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
| JPS5591872A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
-
1982
- 1982-07-19 JP JP57126418A patent/JPS5916346A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
| JPS5591872A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037132A (ja) * | 1983-08-09 | 1985-02-26 | Ushio Inc | 燐硅酸ガラスもしくは燐硼素硅酸ガラスの流動化法 |
| JPS61263159A (ja) * | 1985-03-15 | 1986-11-21 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | 集積回路用の高温相互接続方式 |
| EP0794563A3 (en) * | 1996-03-06 | 1997-09-17 | Nec Corporation | Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer and process of fabrication thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS643343B2 (enExample) | 1989-01-20 |
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