JPS59158546A - 相補形ｍｏｓ集積回路装置 - Google Patents

相補形ｍｏｓ集積回路装置

Info

Publication number
JPS59158546A
JPS59158546A JP58034157A JP3415783A JPS59158546A JP S59158546 A JPS59158546 A JP S59158546A JP 58034157 A JP58034157 A JP 58034157A JP 3415783 A JP3415783 A JP 3415783A JP S59158546 A JPS59158546 A JP S59158546A
Authority
JP
Japan
Prior art keywords
channel
voltage
type
transistor
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58034157A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0532908B2 (enrdf_load_stackoverflow
Inventor
Masaharu Taniguchi
谷口　正治
Yukio Miyazaki
行雄 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58034157A priority Critical patent/JPS59158546A/ja
Publication of JPS59158546A publication Critical patent/JPS59158546A/ja
Publication of JPH0532908B2 publication Critical patent/JPH0532908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58034157A 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置 Granted JPS59158546A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58034157A JPS59158546A (ja) 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58034157A JPS59158546A (ja) 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置

Publications (2)

Publication Number Publication Date
JPS59158546A true JPS59158546A (ja) 1984-09-08
JPH0532908B2 JPH0532908B2 (enrdf_load_stackoverflow) 1993-05-18

Family

ID=12406364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58034157A Granted JPS59158546A (ja) 1983-02-28 1983-02-28 相補形ｍｏｓ集積回路装置

Country Status (1)

Country Link
JP (1) JPS59158546A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01122153A (ja) * 1987-11-05 1989-05-15 Fuji Electric Co Ltd Ｃｍｏｓ半導体回路装置
JPH02369A (ja) * 1987-11-24 1990-01-05 Nec Corp 半導体装置
US5391904A (en) * 1988-09-01 1995-02-21 Fujitsu Limited Semiconductor delay circuit device
WO2011104773A1 (ja) * 2010-02-25 2011-09-01 パナソニック株式会社 不揮発性半導体記憶装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01122153A (ja) * 1987-11-05 1989-05-15 Fuji Electric Co Ltd Ｃｍｏｓ半導体回路装置
JPH02369A (ja) * 1987-11-24 1990-01-05 Nec Corp 半導体装置
US5391904A (en) * 1988-09-01 1995-02-21 Fujitsu Limited Semiconductor delay circuit device
WO2011104773A1 (ja) * 2010-02-25 2011-09-01 パナソニック株式会社 不揮発性半導体記憶装置
JP2011176163A (ja) * 2010-02-25 2011-09-08 Panasonic Corp 不揮発性半導体記憶装置
US8928056B2 (en) 2010-02-25 2015-01-06 Panasonic Intellectual Property Management Co., Ltd. Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JPH0532908B2 (enrdf_load_stackoverflow) 1993-05-18

Similar Documents

Publication Publication Date Title
JP2959528B2 (ja) 保護回路
JP3320872B2 (ja) Ｃｍｏｓ集積回路装置
JPS59158546A (ja) 相補形ｍｏｓ集積回路装置
JPH0653497A (ja) 入出力保護回路を備えた半導体装置
US6833590B2 (en) Semiconductor device
JPS6377155A (ja) オ−プンドレイン出力回路
US6583475B2 (en) Semiconductor device
JPH02238668A (ja) 半導体装置
JP2753191B2 (ja) 半導体装置
JPH06104721A (ja) 半導体集積回路
JPH03225952A (ja) 半導体集積回路
JPH0242759A (ja) 半導体入力保護回路
JPS60120569A (ja) 入力回路
JPH0669429A (ja) 半導体回路
JPH0494167A (ja) 半導体装置
JP2634362B2 (ja) 入出力保護回路
JP2509485Y2 (ja) 半導体集積回路
JP3070095B2 (ja) 入出力保護回路
JPH07176625A (ja) 半導体装置
JPH01297855A (ja) Ｃｍｏｓ半導体装置の出力回路
JPH06188377A (ja) 入出力保護装置
JPH0376153A (ja) 半導体入出力保護装置
JPH06177339A (ja) 半導体集積回路
JPH0449671A (ja) 半導体装置
JPH02277265A (ja) 半導体集積回路の入力保護回路