JPS59158546A - Complementary type metal oxide semiconductor integrated circuit device - Google Patents
Complementary type metal oxide semiconductor integrated circuit deviceInfo
- Publication number
- JPS59158546A JPS59158546A JP58034157A JP3415783A JPS59158546A JP S59158546 A JPS59158546 A JP S59158546A JP 58034157 A JP58034157 A JP 58034157A JP 3415783 A JP3415783 A JP 3415783A JP S59158546 A JPS59158546 A JP S59158546A
- Authority
- JP
- Japan
- Prior art keywords
- type
- bulk
- source
- dielectric resistance
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Abstract
Description
【発明の詳細な説明】
〔発明の技魯分野〕
この発明は相補形ＭＯ８衆種回路装置（０ＭＯ８ＩＣ）
に関するものである。[Detailed Description of the Invention] [Field of the Invention] This invention relates to a complementary MO8 type circuit device (0MO8IC).
It is related to.
ＣＭＯ６ＩＣは′ｉ自費電力か少なく、動作電源電圧範
囲が広いなどの利点をもっているので、近年急速に広く
用いられるようになった。第１図はＣＭ ＯＳ回路の最
小単位を示す回路図で、第２図はこの回路構成を実腺に
実現した０ＭＯ８ＩＣの従来例を示す断面図である。図
において、ＡはｐチャネルＭ ＯＳトランジスタ（ｐ−
ＭＯ８Ｔ）、’ＢはｎチャネルＭ ＯＳ Ｔ （ｎ−Ｍ
Ｏ８Ｔ）である。第２図において、（１）はｎ−形半導
体基板、（２１はｎ −ＭＯ８Ｔ Ｂを形成するための
ｐ−形アイランド、１′３）はｐ−ＭＯ８ＴＡのソース
、（４）は同じくドレイン、（５）はｎ−ＭＯｆＥＴ
Ｂのソース、（６）は同じくドレインで、（７）は電源
端子■３ｓへの接続のための′ｐ＋形コンタクト層でガ
ードリング層を兼ねている。（８）は電源端子■ＤＤへ
の接続のためのｎ形コンタクト層である。通常、第１図
に示すように、ｐ −Ｍ ＯＳ Ｔ Ａのソース（３）
は電源端子■ＤＤに、ｐ−ＭＯ８ＴＢのソース（６）は
電掠端子ｖＳ、に接続され、両ｂｉＯ８Ｔ人、Ｂのゲー
１・は共通Ｇこ入力端子１Ｎに接続され、両ＭＯ８Ｔ
Ａ−、Ｂのドレイン＋４＋ 、 ＋６＋苗は共通に出
力端子ＯＵＴに接続される。CMO6 ICs have advantages such as low self-power consumption and wide operating power supply voltage range, so they have rapidly become widely used in recent years. FIG. 1 is a circuit diagram showing the minimum unit of a CMOS circuit, and FIG. 2 is a cross-sectional view showing a conventional example of an 0MO8IC that actually realizes this circuit configuration. In the figure, A is a p-channel MOS transistor (p-
MO8T), 'B is n-channel MOST (n-M
O8T). In FIG. 2, (1) is an n-type semiconductor substrate, (21 is a p-type island for forming n-MO8T B, 1'3) is the source of p-MO8TA, (4) is also the drain, (5) is n-MOfET
B's source, (6) is also a drain, and (7) is a 'p+ type contact layer for connection to the power supply terminal 3s, which also serves as a guard ring layer. (8) is an n-type contact layer for connection to the power supply terminal DD. Usually, as shown in FIG.
is connected to the power supply terminal ■DD, the source (6) of p-MO8TB is connected to the electric terminal vS, and the gate 1 of both biO8T and B is connected to the common G input terminal 1N, and both MO8T
The drains of +4+ and +6+ of A- and B are commonly connected to the output terminal OUT.
さて、ＭＧＳＴの面、圧仁シャンクシＥンＷｄＥ３−と
ゲート電圧とによって大寸り、ゲーｔ−ｉｔ化喚の膜厚
は）ｈ常ｐ−ＭＧＳＴとｎ−ＭＧＳＴとで同一であるの
で、第１８図の構成では、ジャンクション配圧の低いｎ
−１、Ａ ＯＳ Ｔのソース°トレイン間耐圧がＣＭ
ＯＳ回路の耐圧となる。Now, since the surface of MGST, the thickness of the gate t-it is the same for both p-MGST and n-MGST, In the configuration shown in Figure 18, the junction pressure distribution is low n.
-1, A OS T source ° train breakdown voltage is CM
This becomes the withstand voltage of the OS circuit.
第３図Ｑこ、第１図の入力端子工Ｎの°電位をｖｓｓに
したときのｖＤＤ端子と■Ｓ８端子間の敵圧・電流特性
の一例を示す。この条件ではｐ −Ｍ ＯＳ ’ｉ″Ａ
は元金にＯＮ 状ｙにあり、ｎ−ＭＯ３ＴＢのソース・
ドレイン間に電、圧かかかっている。第３図の１点がｎ
−ＭＯ８ＴＢのソース・ドレイ７ ｆＭＪ ｉｉｔ圧（
ＢＶ、５）ｆ４す、この状態で電流を流すと図に示すよ
うにＹ点に振り込む。FIG. 3 shows an example of the pressure/current characteristics between the vDD terminal and the S8 terminal when the potential of the input terminal N in FIG. 1 is set to vss. Under this condition, p −M OS 'i″A
is in ON state y in the principal, and the source of n-MO3TB is
Electricity and pressure are applied between the drains. One point in Figure 3 is n
-MO8TB source/drain 7 fMJ iit pressure (
BV, 5) f4 When current is applied in this state, it is transferred to point Y as shown in the figure.
第２図Ｃコおいて、ｎ −Ｍ ＯＳ Ｔ Ｂには、ＱＢ
で示す寄生のラテラルｎｐｎｊ”ランジスタが存在して
おり、そのベース・エミッタ間は抵抗（１２）で接続さ
れている。従って、そのコレクタ・エミッタ間の配圧は
ＢＶＱＥＲ七なり、はぼ、ｎ″′・ｐ−間の耐圧に近い
。In Figure 2 C, n -M OST B has QB
There is a parasitic lateral npnj" transistor shown by , and its base and emitter are connected by a resistor (12). Therefore, the voltage distribution between its collector and emitter is BVQER7, which is n" It is close to the breakdown voltage between ' and p-.
従って、電流値が低い領域では、前に述べたジャンクシ
ョン制圧（こゲート電界が加わる表面部分（Ｍ ｏ ｓ
部分）での耐圧”ｖＳＤの方が低いので、それによって
ソース・ドレイン間の制圧がき丑る（１点）。しかしな
がら、１点でアバランシェが起こると、寄生ｎｐｈ ）
ランジスタ（ｕｊのベース領域にどんどん電子が注入さ
れるので、寄生ｎｐｎ、）ランジスタ（１１）の耐圧は
ＢＶＣＢＱに低下する。この点が第３図のＹ点である。Therefore, in the region where the current value is low, the junction suppression (the surface area to which the gate electric field is applied) (Mos
Since the withstand voltage "vSD" at the point ) is lower, the pressure between the source and drain becomes weaker (1 point). However, if an avalanche occurs at one point, the parasitic nph)
Since more and more electrons are injected into the base region of the transistor (uj), the breakdown voltage of the parasitic npn transistor (11) decreases to BVCBQ. This point is point Y in FIG.
以上説明し７たように、従来の０Ｍ０８回路の電源耐圧
は、擾り込み現象があり、定常電源電圧として、第３図
のＹ点に和尚する電圧以上の電圧を印加していると、サ
ージなどによって、第５図のＸＡ（二相労する定圧を越
えるこ七カ・あると、撮り込み現象によって〜、素子の
電源制圧がＹ点Ｇこ相当する′電圧１で下り、素子が破
壊するという問題があつた。また、ソース・ドレイン間
かアバランシェ・ブレークダウンすると、ゲート中に電
子や正孔か注入され光子か劣化するという問題がおった
。As explained above, the power supply breakdown voltage of the conventional 0M08 circuit has a sag phenomenon, and if a voltage higher than the voltage that is applied to the Y point in Figure 3 as a steady power supply voltage is applied, a surge will occur. If the constant pressure exceeds XA (two-phase pressure) in Figure 5, the power supply pressure of the element will drop at voltage 1 corresponding to point Y and G due to the capturing phenomenon, and the element will be destroyed. There was also the problem that when avalanche breakdown occurred between the source and drain, electrons and holes were injected into the gate and photons were degraded.
この発明は以−ヒのよりな点に鑑みてなされたもので、
ｎ−（ｐ−） ｆｉｌ板上に作るｐ（ｒ）−ＭｏＳＴの
バルクを高（低）電位に接続するためのｎ＋（ｐ＋）形
拡散域とｐ−（ｎ−）形アイランド上に作るｎ（ｐ）
−ＭＧＳＴのバルクを低（高）電位に接続するだめのｐ
″−（ｎｌ）形拡散域とを接触させてツェナーダイオー
ドを形成させ、このツェナー′（社）圧をｎ（ｐ）−Ｍ
ＧＳＴのソース・ドレイン耐圧（低電γにを域（こおけ
る）より低くして、振り込与現象をなくして、実菫、的
に↑ゼ源耐ｊＪＥの大きいｃｐＡｏｓ ＩＣを提供する
ものである。This invention was made in view of the following points,
An n+ (p+) type diffusion region to connect the bulk of p(r)-MoST made on the n-(p-) fil board to a high (low) potential and an n-type diffusion region made on the p-(n-) type island. (p)
-p for connecting the bulk of the MGST to a low (high) potential;
'-(nl) type diffusion region to form a Zener diode, and this Zener'(nl) pressure is n(p)-M
The GST source/drain breakdown voltage (low voltage γ) is lower than the range, eliminating the transfer phenomenon, and providing a cpAos IC with a high current breakdown voltage (JJE). .
第４図はこの発明の一実殊、例の構造を示す断面図で、
第２図の従来例と同等一部分は同一符号で示し、その説
明は省略する。FIG. 4 is a cross-sectional view showing the structure of an example of this invention.
Portions equivalent to those in the conventional example shown in FIG. 2 are designated by the same reference numerals, and their explanations will be omitted.
第４図において、（８ａ）はｐ−ＭＯ８ＴＡのベルクを
高電位を源端子■ＩＩＤに接続するための、従来例Ｏこ
おける（８］に対応するｎ″形コンタクト層であるか、
この実施列では、このｎ＋形コンタクト層（８ａ）は、
ｎ−ＭＯ８ＴＢのバルクを低電位電源端子ｖｓｓに接続
するためのｐ＋形コンタクト層（７）と接するように形
成されており、岡者間に形成されるツェナーダイオード
θ３）のツェナー電圧を、−ｎ、−ＭＧＳＴのソース・
ドレイン間のアバランシェ耐圧（第５図の１点）よ′り
低くしておくと、アバランシェ・ブレークダウン力）発
生しないので、従来例で述べた寄生ｎｐｎ ）ランジス
タ（１１）のＢＶＣＩＯに電源制圧が振り込ｐことはな
く、実買上の０Ｍ０６回路の電源制圧を上げることかで
きる。In FIG. 4, (8a) is an n'' type contact layer corresponding to (8) in the conventional example O for connecting the high potential of the p-MO8TA belt to the source terminal ■IID.
In this implementation, this n+ type contact layer (8a) is
It is formed so as to be in contact with the p+ type contact layer (7) for connecting the bulk of n-MO8TB to the low potential power supply terminal vss, and the Zener voltage of the Zener diode θ3) formed between the electrodes is set to -n , - MGST source
If the avalanche breakdown voltage is set lower than the avalanche breakdown voltage (point 1 in Figure 5) between the drains, avalanche breakdown force will not occur, so the power supply suppression will be applied to the BVCIO of the parasitic npn transistor (11) mentioned in the conventional example. There is no need to transfer money, and you can increase the power supply pressure of the 0M06 circuit actually purchased.
上記実施例ではｎ形基板にｐ−形アイランドを形成した
場合を示したか、ｐ形基板にｎ−形アイランドを形成し
た場合についても、同様にこの発明は適用できる。Although the above embodiments have shown the case where a p-type island is formed on an n-type substrate, the present invention can be similarly applied to a case where an n-type island is formed on a p-type substrate.
以上詳述したように、この発明になるＣＭＯ８工Ｃでは
ｐ −Ｍ ＯＳ Ｔ Ｃ７）バルクを高几７位点Ｇこ接
続するためのΩ１形領塚と、ｎ−ＭＧＳＴのバルクを低
電位点に接続するためのｐ＋形領領域を接触させ、その
ツェナー電圧をＭ ＯＳ Ｔのソース・ドレイン耐圧よ
り低くなるよう（こしたので、実質上の成諒耐圧を太き
ぐすることかで！Ｘ、ＭＯ８Ｔの劣化を防止できる。As described in detail above, in the CMO 8 construction according to the present invention, the Ω1 type region for connecting the p-MOST C7) bulk to the high voltage point G7 and the bulk of the n-MGST to the low potential point are used. The p+ type regions for connection are brought into contact, and the Zener voltage is lower than the source/drain breakdown voltage of the MOST. can prevent deterioration.
第１図はＣＭ ＯＳ回路の最小単位を示す回路図、第２
図はこの回路構成を実際（こ実現したＣＭＯ８工Ｃの従
来例を示す断面図、第３図はこの従来例におけるｖＤＤ
−７５９間の電圧・電流特性を示す図、第４図４ｊこ
の発明の一実施例の構造を示す断面図である。
図において、（］）はｎ−形基板、（２）はｐ−形アイ
ランド、（７）はｐ４−影領域、（８ａ）はｎ＋形領領
域（１３）はツェナーダイオード、Ａはｐ−ＭＯ６ＴＸ
Ｂはｎ−ＭＯ８Ｔである。
なお、図中同一符号は同一または相当部分を示す。
代理人 葛 野 信 −（外１名）
特許庁長官殿
１６事件の表示 １．１脩ｉ昭５８−３４１５７号
２ 発明の名称 相補形ＭＯ８集積回路装置３ 補
正をする者
代表者片山仁へ部
４代理人
５、補正の対象
明細書の発明の詳細な説明の欄および図面の第２図。
６、補正の内容
（１） 明細書の第２頁第１２行に「ｎチャネルＭＯ
８ＴＪとあるのを「ｎチャネルＭＯ８）シンジスタ」と
訂正する。
（２） 図面の渠２図を絵付図の通りに訂正する。
？、添添付部類目録
訂正後の第２図を示す図面 １通以上Figure 1 is a circuit diagram showing the minimum unit of a CMOS circuit;
The figure is a cross-sectional view showing a conventional example of CMO8-C that has actually realized this circuit configuration, and Figure 3 shows the vDD in this conventional example.
4j is a cross-sectional view showing the structure of an embodiment of the present invention. In the figure, (]) is an n-type substrate, (2) is a p-type island, (7) is a p4-shadow region, (8a) is an n+-type region (13) is a Zener diode, and A is a p-MO6TX.
B is n-MO8T. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Makoto Kuzuno - (1 other person) Director of the Japan Patent Office Indication of Case 16 1.1 Shui No. 1983-34157 2 Title of invention Complementary MO8 integrated circuit device 3 Representative of the person making the amendment Hitoshi Katayama Department 4 Agent 5, Detailed explanation column of the invention of the specification subject to amendment and FIG. 2 of the drawings. 6. Contents of amendment (1) In the 2nd page, line 12 of the specification, “n-channel MO
8TJ is corrected to ``n-channel MO8) synister.'' (2) Correct the culvert 2 on the drawing to match the illustrated drawing. ? , one or more drawings showing Figure 2 after the correction of the attached catalog of categories
Claims (1)
たｐ（またはｎ）チャネルＭＯ８）ランジスタと、上記
半導体基板内のｐ−（またはｎ−）形アイランドに形成
されたｎ（捷たはｐ）チャネルＭＯ８）ランジスタとを
直列に接続されてなるものにおいて、上記ｐ（ｔたはｎ
）チャネルＭＯ８）ランジスタのバルクを高（または低
）電位点に接続するためのｎ＋ｃ−）、たはｐ＋）影領
域と、上記ｎ （またはｐ）チャネルＭＯＳトランジス
タのバルクを低（′１：たは高）電位点に接続するため
のｐ＋（ｉたはｎ＋）影領域とを互いに接するように形
成してツェナーダイオードを構成せしめ、当該ツェナー
ダイオードのツェナー電圧を上記ｎ（−ｆ７こはｐ）チ
ャネルＭＯＳトランジスタのソース・ドレイン間耐圧よ
り低くなるようにしたことを特徴とする相補形ＭＯ８果
績回路装置。11) A p (or n) channel MO8) transistor formed on an n- (or p-) type semiconductor substrate, and an n (or n) channel MO8) transistor formed on a p- (or n-) type island in the semiconductor substrate. or p) channel MO8) transistor connected in series, the above p(t or n
) Channel MO8) An n+c-) or p+) shadow region for connecting the bulk of the transistor to a high (or low) potential point and a low ('1: A Zener diode is constructed by forming p+ (i or n+) shadow regions in contact with each other to connect to a potential point (high), and the Zener voltage of the Zener diode is set to the above n(-f7). A complementary MO8 circuit device characterized in that the breakdown voltage between the source and drain of a channel MOS transistor is lower than that of a channel MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58034157A JPS59158546A (en) | 1983-02-28 | 1983-02-28 | Complementary type metal oxide semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58034157A JPS59158546A (en) | 1983-02-28 | 1983-02-28 | Complementary type metal oxide semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59158546A true JPS59158546A (en) | 1984-09-08 |
| JPH0532908B2 JPH0532908B2 (en) | 1993-05-18 |
Family
ID=12406364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58034157A Granted JPS59158546A (en) | 1983-02-28 | 1983-02-28 | Complementary type metal oxide semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158546A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01122153A (en) * | 1987-11-05 | 1989-05-15 | Fuji Electric Co Ltd | Cmos semiconductor circuit device |
| JPH02369A (en) * | 1987-11-24 | 1990-01-05 | Nec Corp | Semiconductor device |
| EP0357410A2 (en) * | 1988-09-01 | 1990-03-07 | Fujitsu Limited | Semiconductor integrated circuit device |
| WO2011104773A1 (en) * | 2010-02-25 | 2011-09-01 | パナソニック株式会社 | Non-volatile semiconductor storage device |
-
1983
- 1983-02-28 JP JP58034157A patent/JPS59158546A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01122153A (en) * | 1987-11-05 | 1989-05-15 | Fuji Electric Co Ltd | Cmos semiconductor circuit device |
| JPH02369A (en) * | 1987-11-24 | 1990-01-05 | Nec Corp | Semiconductor device |
| JP2508826B2 (en) * | 1987-11-24 | 1996-06-19 | 日本電気株式会社 | Semiconductor device |
| EP0357410A2 (en) * | 1988-09-01 | 1990-03-07 | Fujitsu Limited | Semiconductor integrated circuit device |
| US5391904A (en) * | 1988-09-01 | 1995-02-21 | Fujitsu Limited | Semiconductor delay circuit device |
| WO2011104773A1 (en) * | 2010-02-25 | 2011-09-01 | パナソニック株式会社 | Non-volatile semiconductor storage device |
| JP2011176163A (en) * | 2010-02-25 | 2011-09-08 | Panasonic Corp | Nonvolatile semiconductor storage device |
| US8928056B2 (en) | 2010-02-25 | 2015-01-06 | Panasonic Intellectual Property Management Co., Ltd. | Nonvolatile semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0532908B2 (en) | 1993-05-18 |
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