JPS59147427A - シリコン半導体の製法 - Google Patents

シリコン半導体の製法

Info

Publication number
JPS59147427A
JPS59147427A JP58020960A JP2096083A JPS59147427A JP S59147427 A JPS59147427 A JP S59147427A JP 58020960 A JP58020960 A JP 58020960A JP 2096083 A JP2096083 A JP 2096083A JP S59147427 A JPS59147427 A JP S59147427A
Authority
JP
Japan
Prior art keywords
semiconductor
silicon
gas
cathode
glow discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58020960A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351089B2 (enExample
Inventor
Kazunobu Tanaka
田中　一宣
Akihisa Matsuda
彰久 松田
Masamichi Kohitsu
小櫃　正道
Takao Kaga
加賀　隆生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Nissan Chemical Corp filed Critical Agency of Industrial Science and Technology
Priority to JP58020960A priority Critical patent/JPS59147427A/ja
Publication of JPS59147427A publication Critical patent/JPS59147427A/ja
Publication of JPH0351089B2 publication Critical patent/JPH0351089B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP58020960A 1983-02-10 1983-02-10 シリコン半導体の製法 Granted JPS59147427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58020960A JPS59147427A (ja) 1983-02-10 1983-02-10 シリコン半導体の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58020960A JPS59147427A (ja) 1983-02-10 1983-02-10 シリコン半導体の製法

Publications (2)

Publication Number Publication Date
JPS59147427A true JPS59147427A (ja) 1984-08-23
JPH0351089B2 JPH0351089B2 (enExample) 1991-08-05

Family

ID=12041739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58020960A Granted JPS59147427A (ja) 1983-02-10 1983-02-10 シリコン半導体の製法

Country Status (1)

Country Link
JP (1) JPS59147427A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107551A (en) * 1980-01-30 1981-08-26 Fuji Photo Film Co Ltd Amorphous semiconductor having chemical modification
JPS57115558A (en) * 1981-01-09 1982-07-19 Canon Inc Photoconductive material

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107551A (en) * 1980-01-30 1981-08-26 Fuji Photo Film Co Ltd Amorphous semiconductor having chemical modification
JPS57115558A (en) * 1981-01-09 1982-07-19 Canon Inc Photoconductive material

Also Published As

Publication number Publication date
JPH0351089B2 (enExample) 1991-08-05

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