JPS56107551A - Amorphous semiconductor having chemical modification - Google Patents

Amorphous semiconductor having chemical modification

Info

Publication number
JPS56107551A
JPS56107551A JP952680A JP952680A JPS56107551A JP S56107551 A JPS56107551 A JP S56107551A JP 952680 A JP952680 A JP 952680A JP 952680 A JP952680 A JP 952680A JP S56107551 A JPS56107551 A JP S56107551A
Authority
JP
Japan
Prior art keywords
conductivity
decreasing
amorphous semiconductor
amorphous
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP952680A
Other languages
Japanese (ja)
Other versions
JPH0219618B2 (en
Inventor
Masatoshi Tabei
Mitsuru Ikeda
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP952680A priority Critical patent/JPS56107551A/en
Publication of JPS56107551A publication Critical patent/JPS56107551A/en
Publication of JPH0219618B2 publication Critical patent/JPH0219618B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To provide an improved SN ratio by decreasing dark current conductivity and increasing electro-optical conductivity by a method wherein chalcogen element is added as a chemical modifier to amorphous semiconductor having amorphous Si containing element for decreasing a captive energy level in the energy gap. CONSTITUTION:Chalcogen element, for example, selenium of a small volume of less than 1atom% is applied as a chemical modifier to amorphous silicon containing fluorin or hydrogin for decreasing a captive energy level of electron and positive hole within an energy gap of amorphous silicon. Grow discharging resolution process shows that a mixed gas is applied as having silane 100%, celenium gas and argon gas. Thereby, a drak current conductivity of amorphous semiconductor may be decreased and a photoelectrical conductivity thereof may be increased.
JP952680A 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification Granted JPS56107551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP952680A JPS56107551A (en) 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP952680A JPS56107551A (en) 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification

Publications (2)

Publication Number Publication Date
JPS56107551A true JPS56107551A (en) 1981-08-26
JPH0219618B2 JPH0219618B2 (en) 1990-05-02

Family

ID=11722704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP952680A Granted JPS56107551A (en) 1980-01-30 1980-01-30 Amorphous semiconductor having chemical modification

Country Status (1)

Country Link
JP (1) JPS56107551A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122784A (en) * 1982-01-18 1983-07-21 Mitsui Toatsu Chem Inc Solar battery
JPS58191477A (en) * 1982-05-06 1983-11-08 Mitsui Toatsu Chem Inc Manufacture of solar battery
JPS5914680A (en) * 1982-07-16 1984-01-25 Mitsui Toatsu Chem Inc Amorphous silicon solar battery and manufacture thereof
JPS5989409A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Reactive gas for vapor phase reaction
JPS5989410A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Vapor phase reaction method
JPS59147427A (en) * 1983-02-10 1984-08-23 Agency Of Ind Science & Technol Novel silicon semiconductor and manufacture thereof
US8115203B2 (en) 2009-01-26 2012-02-14 Massachusetts Institute Of Technology Photoconductors for mid-/far-IR detection

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
D.E.CARLSON AND C.R.WRONSKI=1979 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122784A (en) * 1982-01-18 1983-07-21 Mitsui Toatsu Chem Inc Solar battery
JPH0472391B2 (en) * 1982-01-18 1992-11-18 Mitsui Toatsu Chemicals
JPS58191477A (en) * 1982-05-06 1983-11-08 Mitsui Toatsu Chem Inc Manufacture of solar battery
JPS5914680A (en) * 1982-07-16 1984-01-25 Mitsui Toatsu Chem Inc Amorphous silicon solar battery and manufacture thereof
JPS5989409A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Reactive gas for vapor phase reaction
JPS5989410A (en) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd Vapor phase reaction method
JPS59147427A (en) * 1983-02-10 1984-08-23 Agency Of Ind Science & Technol Novel silicon semiconductor and manufacture thereof
JPH0351089B2 (en) * 1983-02-10 1991-08-05 Kogyo Gijutsu Incho
US8115203B2 (en) 2009-01-26 2012-02-14 Massachusetts Institute Of Technology Photoconductors for mid-/far-IR detection

Also Published As

Publication number Publication date
JPH0219618B2 (en) 1990-05-02

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