JPS59143355A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS59143355A
JPS59143355A JP58016933A JP1693383A JPS59143355A JP S59143355 A JPS59143355 A JP S59143355A JP 58016933 A JP58016933 A JP 58016933A JP 1693383 A JP1693383 A JP 1693383A JP S59143355 A JPS59143355 A JP S59143355A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
filter capacitor
circuit device
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58016933A
Other languages
English (en)
Inventor
Susumu Oota
進 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58016933A priority Critical patent/JPS59143355A/ja
Publication of JPS59143355A publication Critical patent/JPS59143355A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49589Capacitor integral with or on the leadframe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体集積回路装置に関する。
従来、半導体集4*回路装置を機器に実装した場合、負
荷変動等による電源電圧の変動については機器側で配慮
すべきものとして、この変動を低減するフィルタコンデ
ンサは半導体集積回路装置内には実装されていない。
第1図は半導体集積回路装置を機器に実装した場合の回
路図である。
実際に機器を稼動する場合、半導体集積回路装置1は高
速で動作するため、パターン配線、電気部品のリード線
、ケーブル等によるインダクタンスLの作用が大きくあ
られれて、信号電流の戻りのグランド電流の変化に伴な
い、Ldi/dtによるスパイクノイズが発生し回路が
誤動作する。
このスパイクノイズを低減させ回路を安定動作させるた
め1通常半導体集積回路装置毎、又は数個の半導体集積
回路装置毎にフィルタコンデンサを実装している。
しかしながら、半導体集積回路装置が高速になればなる
ほど、を気配線パターン及びフィルタコンデンサのリー
ド線の物理的長さ等により発生ノイズを低減させること
が難かしく、更にフィルタコンデンサ実装のための物理
的スペースを要し小型化への大きな制約条件となる欠点
がある。
本発明の目的は、上記欠点を除去し、半導体集積回路素
子の入力端子にフィルタコンデンサを接続することによ
り負荷変動による嵯源篭圧のスパイクノイズを低減した
半導体集積回路装置を提供することにある。
本発明の半導体集積回路装置は、半導体集積回路素子と
、該半導体集積回路素子の入力端子に接続されたフィル
タコンデンサと、前記半導体集積回路素子とフィルタコ
ンデンサとを収納するパッケージとを含んで構成される
本発明の他の半導体集積回路装置は、半導体基板に形成
された半導体集積回路素子と、該半導体集積回路素子の
入力端子に接続しかつ前記半導体基板に形成されたフィ
ルタコンデンサとを含んで構成される。
次に本発明を実施例を用いて詳細に説明する。
第2図は第1の本発明の一実施例の断面図である。
半導体集積回路素子2及びフィルタコンデンサ3はセラ
ミック板又は金属板から成る基板4に固定されており、
半導体集積回路素子2の入力端子は金属細線7によりフ
ィルタコンデンサに連結されている。なお5はリード、
6はパッケージとしての封止樹脂である。
この様に構成した半導体集積回路装置においては、半導
体集積回路素子2で消費する電流は隣接したフィルタコ
ンデンサ3から供給されるので。
この間の金属細線の自己インダクタンスによるLdi/
dtが回路へのスパイクノイズとして影響するのみとな
る。
第3図は第2の本発明の一実施例の平面図である。
半導体基板10上に、半導体集積回路素子11とその入
力端子に接続するフィルタコンデンサ12とが形成しで
ある。フィルタコンデンサ12は半導体集積回路素子1
1の製造工程を利用し半導体集積回路素子11と一体的
に形成することができる。この様に形成された半導体集
積回路においては自己インダクタンスは極めて小さくな
りスパイクノイズ低減に大きな効果がある。従って。
半導体集積回路装置外へのクロストーク、反射等による
影響も低減できる。更にこの半導体集積回路装置を実装
する機器の小型化が可能となる。
以上詳細に説明した様に、本発明によれば、半導体集積
回路素子の入力端子にフィルタコンデンサを接続するこ
とにより負荷変動による電源電圧のスパイクノイズを低
減した半導体集積回路装置が得られるのでその効果は大
きい。
【図面の簡単な説明】
第1図は半導体集積回路装置を機器に実装した場合の回
路図、第2図は第1の本発明の一実施例の断面図、第3
図は第2の本発明の一実施例の平面図である。 1・・・・・・半導体集積回路装置、2・・・・・・半
導体集積回路素子、3・・・・・・フィルタコンデンサ
、4・・・・・・基板、5・・・・・・リード、6・・
・・・・封止樹脂、7・・・・・・金属細線、10・・
・・・・半導体基板、11・・・・・・半導体集積−ζ
 − 回路素子、12・・・・・・フィルタコンデンサ。 6一

Claims (2)

    【特許請求の範囲】
  1. (1)半導体集積回路素子と、該半導体集積回路素子の
    入力端子に接続されたフィルタコンデンサと、前記半導
    体集積回路素子とフィルタコンデンサとを収納するパッ
    ケージとを含むことを特徴とする半導体集積回路素子。
  2. (2)半導体基板に形成された半導体集積回路素子と、
    該半導体集積回路素子の入力端子に接続しかつ前記半導
    体基板に形成されたフィルタコンデンサとを含むことを
    特徴とする半導体集積回路装置。
JP58016933A 1983-02-04 1983-02-04 半導体集積回路装置 Pending JPS59143355A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58016933A JPS59143355A (ja) 1983-02-04 1983-02-04 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58016933A JPS59143355A (ja) 1983-02-04 1983-02-04 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS59143355A true JPS59143355A (ja) 1984-08-16

Family

ID=11929919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58016933A Pending JPS59143355A (ja) 1983-02-04 1983-02-04 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59143355A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194779B1 (en) * 1989-11-28 2001-02-27 Kabushiki Kaisha Toshiba Plastic mold type semiconductor device
KR100600202B1 (ko) * 1997-10-30 2006-09-22 애질런트 테크놀로지스, 인크. 저인덕턴스집적회로패키지

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515364B1 (ja) * 1971-04-17 1976-02-19
JPS5251879A (en) * 1975-10-24 1977-04-26 Hitachi Ltd Semiconductor integrated circuit
JPS5749259A (en) * 1980-09-09 1982-03-23 Mitsubishi Electric Corp Ic package containing capacitor
JPS5764953A (en) * 1980-10-09 1982-04-20 Oki Electric Ind Co Ltd Semiconductor device
JPS57113261A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device
JPS57157549A (en) * 1981-03-24 1982-09-29 Nec Corp Container for integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515364B1 (ja) * 1971-04-17 1976-02-19
JPS5251879A (en) * 1975-10-24 1977-04-26 Hitachi Ltd Semiconductor integrated circuit
JPS5749259A (en) * 1980-09-09 1982-03-23 Mitsubishi Electric Corp Ic package containing capacitor
JPS5764953A (en) * 1980-10-09 1982-04-20 Oki Electric Ind Co Ltd Semiconductor device
JPS57113261A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device
JPS57157549A (en) * 1981-03-24 1982-09-29 Nec Corp Container for integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194779B1 (en) * 1989-11-28 2001-02-27 Kabushiki Kaisha Toshiba Plastic mold type semiconductor device
KR100600202B1 (ko) * 1997-10-30 2006-09-22 애질런트 테크놀로지스, 인크. 저인덕턴스집적회로패키지

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