JPS59138333A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59138333A
JPS59138333A JP1141583A JP1141583A JPS59138333A JP S59138333 A JPS59138333 A JP S59138333A JP 1141583 A JP1141583 A JP 1141583A JP 1141583 A JP1141583 A JP 1141583A JP S59138333 A JPS59138333 A JP S59138333A
Authority
JP
Japan
Prior art keywords
film
alloy
electrode
gas
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1141583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0416952B2 (cg-RX-API-DMAC7.html
Inventor
Shinichi Ofuji
大藤　晋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1141583A priority Critical patent/JPS59138333A/ja
Publication of JPS59138333A publication Critical patent/JPS59138333A/ja
Publication of JPH0416952B2 publication Critical patent/JPH0416952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP1141583A 1983-01-28 1983-01-28 半導体装置の製造方法 Granted JPS59138333A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1141583A JPS59138333A (ja) 1983-01-28 1983-01-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1141583A JPS59138333A (ja) 1983-01-28 1983-01-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59138333A true JPS59138333A (ja) 1984-08-08
JPH0416952B2 JPH0416952B2 (cg-RX-API-DMAC7.html) 1992-03-25

Family

ID=11777406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1141583A Granted JPS59138333A (ja) 1983-01-28 1983-01-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59138333A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02281621A (ja) * 1989-03-22 1990-11-19 American Teleph & Telegr Co <Att> 半導体素子とその形成方法、金属堆積装置、金属源製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481082A (en) * 1977-12-12 1979-06-28 Fujitsu Ltd Manufacture of semiconductor
JPS5535868A (en) * 1978-09-05 1980-03-13 Matsushita Electric Ind Co Ltd Humidity controlling method for air conditioner

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481082A (en) * 1977-12-12 1979-06-28 Fujitsu Ltd Manufacture of semiconductor
JPS5535868A (en) * 1978-09-05 1980-03-13 Matsushita Electric Ind Co Ltd Humidity controlling method for air conditioner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02281621A (ja) * 1989-03-22 1990-11-19 American Teleph & Telegr Co <Att> 半導体素子とその形成方法、金属堆積装置、金属源製造方法

Also Published As

Publication number Publication date
JPH0416952B2 (cg-RX-API-DMAC7.html) 1992-03-25

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