JPS5481082A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5481082A
JPS5481082A JP14905777A JP14905777A JPS5481082A JP S5481082 A JPS5481082 A JP S5481082A JP 14905777 A JP14905777 A JP 14905777A JP 14905777 A JP14905777 A JP 14905777A JP S5481082 A JPS5481082 A JP S5481082A
Authority
JP
Japan
Prior art keywords
gate electrode
gate
hydrogen
heat treatment
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14905777A
Other languages
Japanese (ja)
Inventor
Nobuo Toyokura
Hiroshi Tokunaga
Hajime Ishikawa
Fumihiko Yanagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Fujitsu Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Nippon Telegraph and Telephone Corp filed Critical Fujitsu Ltd
Priority to JP14905777A priority Critical patent/JPS5481082A/en
Publication of JPS5481082A publication Critical patent/JPS5481082A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the movable ion quantity at the gate aera by giving a heat treatment in the atmosphere containing the hydrogen to the semiconductor wafer to which the gate electrode composed of the high fusing point metal.
CONSTITUTION: A heat treatment is given to the semiconductor wafer in the atmosphere containing the hydrogen after formation of the gate insulator film and the gate electrode. As a result, the unsteadiness due to the movable ion is dissolved, and the value of the proper resistance of the gate electrode becomes nearly identical to the bulk value. At the same time, both the fixed caharge for the MIS interface property and the interface level density are reduced greatly.
COPYRIGHT: (C)1979,JPO&Japio
JP14905777A 1977-12-12 1977-12-12 Manufacture of semiconductor Pending JPS5481082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14905777A JPS5481082A (en) 1977-12-12 1977-12-12 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14905777A JPS5481082A (en) 1977-12-12 1977-12-12 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5481082A true JPS5481082A (en) 1979-06-28

Family

ID=15466716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14905777A Pending JPS5481082A (en) 1977-12-12 1977-12-12 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5481082A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671973A (en) * 1979-11-16 1981-06-15 Nec Corp Preparation method of semiconductor system
JPS5931065A (en) * 1982-08-16 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPS59138333A (en) * 1983-01-28 1984-08-08 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671973A (en) * 1979-11-16 1981-06-15 Nec Corp Preparation method of semiconductor system
JPH0442833B2 (en) * 1979-11-16 1992-07-14 Nippon Electric Co
JPS5931065A (en) * 1982-08-16 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPH0478021B2 (en) * 1982-08-16 1992-12-10 Nippon Telegraph & Telephone
JPS59138333A (en) * 1983-01-28 1984-08-08 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
JPH0416952B2 (en) * 1983-01-28 1992-03-25 Nippon Telegraph & Telephone

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