JPS59135749A - 層間絶縁膜の形成方法 - Google Patents
層間絶縁膜の形成方法Info
- Publication number
- JPS59135749A JPS59135749A JP1117283A JP1117283A JPS59135749A JP S59135749 A JPS59135749 A JP S59135749A JP 1117283 A JP1117283 A JP 1117283A JP 1117283 A JP1117283 A JP 1117283A JP S59135749 A JPS59135749 A JP S59135749A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- resist
- layer
- metal wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011229 interlayer Substances 0.000 title claims abstract description 42
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 239000010410 layer Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000007740 vapor deposition Methods 0.000 claims abstract description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 3
- 238000010894 electron beam technology Methods 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1117283A JPS59135749A (ja) | 1983-01-24 | 1983-01-24 | 層間絶縁膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1117283A JPS59135749A (ja) | 1983-01-24 | 1983-01-24 | 層間絶縁膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59135749A true JPS59135749A (ja) | 1984-08-04 |
| JPH0225251B2 JPH0225251B2 (enrdf_load_stackoverflow) | 1990-06-01 |
Family
ID=11770631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1117283A Granted JPS59135749A (ja) | 1983-01-24 | 1983-01-24 | 層間絶縁膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59135749A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187355A (ja) * | 1984-10-05 | 1986-05-02 | Nippon Telegr & Teleph Corp <Ntt> | 多層配線形成法 |
-
1983
- 1983-01-24 JP JP1117283A patent/JPS59135749A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187355A (ja) * | 1984-10-05 | 1986-05-02 | Nippon Telegr & Teleph Corp <Ntt> | 多層配線形成法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0225251B2 (enrdf_load_stackoverflow) | 1990-06-01 |
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