JPS59121848A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59121848A JPS59121848A JP22742882A JP22742882A JPS59121848A JP S59121848 A JPS59121848 A JP S59121848A JP 22742882 A JP22742882 A JP 22742882A JP 22742882 A JP22742882 A JP 22742882A JP S59121848 A JPS59121848 A JP S59121848A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- region
- groove
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 230000003071 parasitic effect Effects 0.000 abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- 239000011574 phosphorus Substances 0.000 abstract description 6
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- -1 boron ions Chemical class 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22742882A JPS59121848A (ja) | 1982-12-28 | 1982-12-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22742882A JPS59121848A (ja) | 1982-12-28 | 1982-12-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121848A true JPS59121848A (ja) | 1984-07-14 |
| JPH0451978B2 JPH0451978B2 (enrdf_load_stackoverflow) | 1992-08-20 |
Family
ID=16860692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22742882A Granted JPS59121848A (ja) | 1982-12-28 | 1982-12-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121848A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6323335A (ja) * | 1985-09-25 | 1988-01-30 | モノリシツク メモリ−ズ，インコ−ポレイテツド | 半導体装置及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149750A (en) * | 1981-03-12 | 1982-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Element isolating method |
-
1982
- 1982-12-28 JP JP22742882A patent/JPS59121848A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149750A (en) * | 1981-03-12 | 1982-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Element isolating method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6323335A (ja) * | 1985-09-25 | 1988-01-30 | モノリシツク メモリ−ズ，インコ−ポレイテツド | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0451978B2 (enrdf_load_stackoverflow) | 1992-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6114745A (ja) | 半導体構造体の製造方法 | |
| JPH0513566A (ja) | 半導体装置の製造方法 | |
| KR100366923B1 (ko) | 에스오아이 기판 및 이의 제조방법 | |
| JPH0351108B2 (enrdf_load_stackoverflow) | ||
| JP2021153163A (ja) | 半導体装置の製造方法、および半導体装置 | |
| KR100488099B1 (ko) | 쇼오트 채널 모오스 트랜지스터 및 그 제조 방법 | |
| JPH04276662A (ja) | 半導体装置の製造方法 | |
| JP2775765B2 (ja) | 半導体装置の製造法 | |
| JPS59121848A (ja) | 半導体装置の製造方法 | |
| JP2782781B2 (ja) | 半導体装置の製造方法 | |
| JPH05343680A (ja) | 半導体装置の製造方法 | |
| JPS5846648A (ja) | 半導体装置の製造方法 | |
| JPH09139382A (ja) | 半導体装置の製造方法 | |
| JPS5940563A (ja) | 半導体装置の製造方法 | |
| JPS59124142A (ja) | 半導体装置の製造方法 | |
| JPS6045037A (ja) | 半導体装置の基板構造およびその製造方法 | |
| JPH06244415A (ja) | 半導体装置およびその製造方法 | |
| JPH0334655B2 (enrdf_load_stackoverflow) | ||
| JP2674568B2 (ja) | 半導体装置の製造方法 | |
| JPH05166919A (ja) | 半導体装置及びその製造方法 | |
| JPS60226168A (ja) | 相補型ｍｏｓ半導体装置 | |
| JP2887902B2 (ja) | 半導体装置の製造方法 | |
| JPH01117066A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JP3312384B2 (ja) | ラテラルバイポーラトランジスタとその製造方法 | |
| JPS58197871A (ja) | 半導体装置およびその製造方法 |