JPS59121848A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59121848A
JPS59121848A JP22742882A JP22742882A JPS59121848A JP S59121848 A JPS59121848 A JP S59121848A JP 22742882 A JP22742882 A JP 22742882A JP 22742882 A JP22742882 A JP 22742882A JP S59121848 A JPS59121848 A JP S59121848A
Authority
JP
Japan
Prior art keywords
substrate
groove
element isolation
isolation region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22742882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451978B2 (enrdf_load_stackoverflow
Inventor
Ryozo Nakayama
中山　良三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22742882A priority Critical patent/JPS59121848A/ja
Publication of JPS59121848A publication Critical patent/JPS59121848A/ja
Publication of JPH0451978B2 publication Critical patent/JPH0451978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP22742882A 1982-12-28 1982-12-28 半導体装置の製造方法 Granted JPS59121848A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22742882A JPS59121848A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22742882A JPS59121848A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59121848A true JPS59121848A (ja) 1984-07-14
JPH0451978B2 JPH0451978B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=16860692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22742882A Granted JPS59121848A (ja) 1982-12-28 1982-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59121848A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323335A (ja) * 1985-09-25 1988-01-30 モノリシツク　メモリ−ズ，インコ−ポレイテツド 半導体装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149750A (en) * 1981-03-12 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Element isolating method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149750A (en) * 1981-03-12 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Element isolating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323335A (ja) * 1985-09-25 1988-01-30 モノリシツク　メモリ−ズ，インコ−ポレイテツド 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0451978B2 (enrdf_load_stackoverflow) 1992-08-20

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