JPS59117151A - Ｍｏｓ集積回路 - Google Patents

Ｍｏｓ集積回路

Info

Publication number
JPS59117151A
JPS59117151A JP57232399A JP23239982A JPS59117151A JP S59117151 A JPS59117151 A JP S59117151A JP 57232399 A JP57232399 A JP 57232399A JP 23239982 A JP23239982 A JP 23239982A JP S59117151 A JPS59117151 A JP S59117151A
Authority
JP
Japan
Prior art keywords
contact
mos
type
region
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57232399A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6355869B2 (enrdf_load_stackoverflow
Inventor
Tadashi Nakai
正 中井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57232399A priority Critical patent/JPS59117151A/ja
Publication of JPS59117151A publication Critical patent/JPS59117151A/ja
Publication of JPS6355869B2 publication Critical patent/JPS6355869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57232399A 1982-12-23 1982-12-23 Ｍｏｓ集積回路 Granted JPS59117151A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57232399A JPS59117151A (ja) 1982-12-23 1982-12-23 Ｍｏｓ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57232399A JPS59117151A (ja) 1982-12-23 1982-12-23 Ｍｏｓ集積回路

Publications (2)

Publication Number Publication Date
JPS59117151A true JPS59117151A (ja) 1984-07-06
JPS6355869B2 JPS6355869B2 (enrdf_load_stackoverflow) 1988-11-04

Family

ID=16938629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57232399A Granted JPS59117151A (ja) 1982-12-23 1982-12-23 Ｍｏｓ集積回路

Country Status (1)

Country Link
JP (1) JPS59117151A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6355869B2 (enrdf_load_stackoverflow) 1988-11-04

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