JPS59114824A - 半導体装置の平坦化方法 - Google Patents
半導体装置の平坦化方法Info
- Publication number
- JPS59114824A JPS59114824A JP22305882A JP22305882A JPS59114824A JP S59114824 A JPS59114824 A JP S59114824A JP 22305882 A JP22305882 A JP 22305882A JP 22305882 A JP22305882 A JP 22305882A JP S59114824 A JPS59114824 A JP S59114824A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- photoresist
- film
- semiconductor
- unevenness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 30
- 239000000758 substrate Substances 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract 10
- 239000010409 thin film Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22305882A JPS59114824A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の平坦化方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22305882A JPS59114824A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の平坦化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114824A true JPS59114824A (ja) | 1984-07-03 |
| JPH0322690B2 JPH0322690B2 (enrdf_load_stackoverflow) | 1991-03-27 |
Family
ID=16792169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22305882A Granted JPS59114824A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の平坦化方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114824A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170720A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | パタ−ン形成方法 |
| JPS61180241A (ja) * | 1985-02-06 | 1986-08-12 | Hitachi Ltd | パタ−ン形成方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55143035A (en) * | 1979-04-24 | 1980-11-08 | Nec Corp | Manufacture of pattern |
| JPS5617042A (en) * | 1979-07-23 | 1981-02-18 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57149733A (en) * | 1981-03-11 | 1982-09-16 | Hitachi Ltd | Dry etching method |
-
1982
- 1982-12-21 JP JP22305882A patent/JPS59114824A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55143035A (en) * | 1979-04-24 | 1980-11-08 | Nec Corp | Manufacture of pattern |
| JPS5617042A (en) * | 1979-07-23 | 1981-02-18 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57149733A (en) * | 1981-03-11 | 1982-09-16 | Hitachi Ltd | Dry etching method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170720A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | パタ−ン形成方法 |
| JPS61180241A (ja) * | 1985-02-06 | 1986-08-12 | Hitachi Ltd | パタ−ン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322690B2 (enrdf_load_stackoverflow) | 1991-03-27 |
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