JPH0322690B2 - - Google Patents
Info
- Publication number
- JPH0322690B2 JPH0322690B2 JP57223058A JP22305882A JPH0322690B2 JP H0322690 B2 JPH0322690 B2 JP H0322690B2 JP 57223058 A JP57223058 A JP 57223058A JP 22305882 A JP22305882 A JP 22305882A JP H0322690 B2 JPH0322690 B2 JP H0322690B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- resist
- photoresist
- semiconductor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22305882A JPS59114824A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の平坦化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22305882A JPS59114824A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の平坦化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59114824A JPS59114824A (ja) | 1984-07-03 |
JPH0322690B2 true JPH0322690B2 (enrdf_load_stackoverflow) | 1991-03-27 |
Family
ID=16792169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22305882A Granted JPS59114824A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の平坦化方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59114824A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0727216B2 (ja) * | 1985-02-06 | 1995-03-29 | 株式会社日立製作所 | パタ−ン形成方法 |
JPS6170720A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | パタ−ン形成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55143035A (en) * | 1979-04-24 | 1980-11-08 | Nec Corp | Manufacture of pattern |
JPS6033307B2 (ja) * | 1979-07-23 | 1985-08-02 | 富士通株式会社 | 半導体装置の製造方法 |
JPS57149733A (en) * | 1981-03-11 | 1982-09-16 | Hitachi Ltd | Dry etching method |
-
1982
- 1982-12-21 JP JP22305882A patent/JPS59114824A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59114824A (ja) | 1984-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6245043A (ja) | 半導体構造における溝の充填方法 | |
JPH07120650B2 (ja) | スピンオンしたゲルマニウムガラス | |
US4499119A (en) | Method of manufacturing super-conductive tunnel junction devices with precise junction area control | |
JPH0434296B2 (enrdf_load_stackoverflow) | ||
JPH0322690B2 (enrdf_load_stackoverflow) | ||
US6448183B1 (en) | Method of forming contact portion of semiconductor element | |
JPH0669351A (ja) | 多層金属配線構造のコンタクトの製造方法 | |
KR100200297B1 (ko) | 반도체 소자의 콘택홀 형성방법 | |
JPS6362255A (ja) | 半導体装置の平坦化方法 | |
JPS59114823A (ja) | 半導体装置の平坦化方法 | |
KR0147648B1 (ko) | 반도체 장치의 층간절연층 평탄화방법 | |
KR0171316B1 (ko) | 반도체 소자의 층간 절연막의 평탄화 방법 | |
JPS627699B2 (enrdf_load_stackoverflow) | ||
JPH0226053A (ja) | 半導体装置の製造方法 | |
JP3021711B2 (ja) | 半導体集積回路の製造方法 | |
JPH10214892A (ja) | 半導体装置の製造方法 | |
KR100190191B1 (ko) | 반도체 소자의 저장전극 형성방법 | |
JP3041929B2 (ja) | 平坦化方法 | |
JPH0677182A (ja) | 凹凸のある絶縁膜の平坦化方法 | |
KR960008559B1 (ko) | 반도체 소자의 미세 콘택홀 형성방법 | |
JPH0231448A (ja) | 半導体装置の製造方法 | |
JPH1187310A (ja) | 緩やかな傾斜を有する酸化膜パターン形成のための半導体素子の製造方法 | |
JPS62216268A (ja) | 半導体装置の製造方法 | |
KR0155864B1 (ko) | 반도체 장치의 배선 방법 | |
JPH03254123A (ja) | 選択エッチング方法 |