JPS59112655A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59112655A JPS59112655A JP57223614A JP22361482A JPS59112655A JP S59112655 A JPS59112655 A JP S59112655A JP 57223614 A JP57223614 A JP 57223614A JP 22361482 A JP22361482 A JP 22361482A JP S59112655 A JPS59112655 A JP S59112655A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- silicon film
- region
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 239000002699 waste material Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 description 19
- 150000004767 nitrides Chemical class 0.000 description 11
- 239000005360 phosphosilicate glass Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 210000001161 mammalian embryo Anatomy 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223614A JPS59112655A (ja) | 1982-12-18 | 1982-12-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57223614A JPS59112655A (ja) | 1982-12-18 | 1982-12-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59112655A true JPS59112655A (ja) | 1984-06-29 |
| JPH0254662B2 JPH0254662B2 (en, 2012) | 1990-11-22 |
Family
ID=16800954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57223614A Granted JPS59112655A (ja) | 1982-12-18 | 1982-12-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59112655A (en, 2012) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131562A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS61248556A (ja) * | 1985-04-26 | 1986-11-05 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62113470A (ja) * | 1985-10-16 | 1987-05-25 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体層内に形成された装置に対する端子を作る方法 |
| JPS62114268A (ja) * | 1985-11-13 | 1987-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US6476452B2 (en) | 1999-03-01 | 2002-11-05 | Nec Corporation | Bipolar/BiCMOS semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5563821A (en) * | 1978-11-06 | 1980-05-14 | Nec Corp | Semiconductor device |
-
1982
- 1982-12-18 JP JP57223614A patent/JPS59112655A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5563821A (en) * | 1978-11-06 | 1980-05-14 | Nec Corp | Semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131562A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS61248556A (ja) * | 1985-04-26 | 1986-11-05 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS62113470A (ja) * | 1985-10-16 | 1987-05-25 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体層内に形成された装置に対する端子を作る方法 |
| JPS62114268A (ja) * | 1985-11-13 | 1987-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US6476452B2 (en) | 1999-03-01 | 2002-11-05 | Nec Corporation | Bipolar/BiCMOS semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0254662B2 (en, 2012) | 1990-11-22 |
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