JPS5887862A - 長尺一次元薄膜センサ - Google Patents
長尺一次元薄膜センサInfo
- Publication number
- JPS5887862A JPS5887862A JP56185188A JP18518881A JPS5887862A JP S5887862 A JPS5887862 A JP S5887862A JP 56185188 A JP56185188 A JP 56185188A JP 18518881 A JP18518881 A JP 18518881A JP S5887862 A JPS5887862 A JP S5887862A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transparent electrode
- electrode
- light
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56185188A JPS5887862A (ja) | 1981-11-20 | 1981-11-20 | 長尺一次元薄膜センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56185188A JPS5887862A (ja) | 1981-11-20 | 1981-11-20 | 長尺一次元薄膜センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5887862A true JPS5887862A (ja) | 1983-05-25 |
JPS6314872B2 JPS6314872B2 (enrdf_load_stackoverflow) | 1988-04-01 |
Family
ID=16166385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56185188A Granted JPS5887862A (ja) | 1981-11-20 | 1981-11-20 | 長尺一次元薄膜センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5887862A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037161A (ja) * | 1983-08-09 | 1985-02-26 | Toshiba Corp | 光電変換素子 |
US4672221A (en) * | 1982-11-01 | 1987-06-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Photoelectric conversion element with light shielding conductive layer |
JPH01143150U (enrdf_load_stackoverflow) * | 1988-03-28 | 1989-10-02 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879756A (ja) * | 1981-11-06 | 1983-05-13 | Nec Corp | 非晶質シリコンイメ−ジセンサ− |
-
1981
- 1981-11-20 JP JP56185188A patent/JPS5887862A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879756A (ja) * | 1981-11-06 | 1983-05-13 | Nec Corp | 非晶質シリコンイメ−ジセンサ− |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4672221A (en) * | 1982-11-01 | 1987-06-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Photoelectric conversion element with light shielding conductive layer |
JPS6037161A (ja) * | 1983-08-09 | 1985-02-26 | Toshiba Corp | 光電変換素子 |
JPH01143150U (enrdf_load_stackoverflow) * | 1988-03-28 | 1989-10-02 |
Also Published As
Publication number | Publication date |
---|---|
JPS6314872B2 (enrdf_load_stackoverflow) | 1988-04-01 |
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