JPS5471594A - Production of photo sensor array - Google Patents

Production of photo sensor array

Info

Publication number
JPS5471594A
JPS5471594A JP13778177A JP13778177A JPS5471594A JP S5471594 A JPS5471594 A JP S5471594A JP 13778177 A JP13778177 A JP 13778177A JP 13778177 A JP13778177 A JP 13778177A JP S5471594 A JPS5471594 A JP S5471594A
Authority
JP
Japan
Prior art keywords
wirings
common
electrodes
matrix
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13778177A
Other languages
Japanese (ja)
Other versions
JPS5441878B2 (en
Inventor
Kazumi Komiya
Toshio Yamashita
Masaru Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Panasonic System Solutions Japan Co Ltd
Panasonic Holdings Corp
Original Assignee
Matsushita Graphic Communication Systems Inc
Nippon Telegraph and Telephone Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Graphic Communication Systems Inc, Nippon Telegraph and Telephone Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Graphic Communication Systems Inc
Priority to JP13778177A priority Critical patent/JPS5471594A/en
Publication of JPS5471594A publication Critical patent/JPS5471594A/en
Publication of JPS5441878B2 publication Critical patent/JPS5441878B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To constitute matrix connections which are capable of reading a long- length original with a high resolution in correspondence to 1:1 without using any lens type optical systems and prevent the effect between each sensor by the matrix wirings by Te films.
CONSTITUTION: Electrode films for discrete 2 and common 4 are made in strip form in specified regions on a transparent glass plate 1 by In2O3. Next, two layer films of Cr and gold are evaporated in strip form in specified regions for wirings 3, 5 and are then photoetched to make discrete electrodes 2, 3 and first common wirings 4, 5. Next, islands 6 of copper-doped CdS are provided to the end of the electrodes 2 and heat treatment is performed in inert gas to provide photo conductivity. The islands 6 and wirings 4 are connected by selectively forming common electrodes 7 through vapor deposition of Te. The effect between each sensor by the matrix wirings is prevented by the rectifying characteristics of Te and CdS. Thereafafter, film leads 8 are provided and the common wirings 9 and L type wirings 3 are connected section by section by way of openings 10. There is a hole 13 in a base 11 for substrate reinforcement and device mounting and light is radiable from its back as well.
COPYRIGHT: (C)1979,JPO&Japio
JP13778177A 1977-11-18 1977-11-18 Production of photo sensor array Granted JPS5471594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13778177A JPS5471594A (en) 1977-11-18 1977-11-18 Production of photo sensor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13778177A JPS5471594A (en) 1977-11-18 1977-11-18 Production of photo sensor array

Publications (2)

Publication Number Publication Date
JPS5471594A true JPS5471594A (en) 1979-06-08
JPS5441878B2 JPS5441878B2 (en) 1979-12-11

Family

ID=15206682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13778177A Granted JPS5471594A (en) 1977-11-18 1977-11-18 Production of photo sensor array

Country Status (1)

Country Link
JP (1) JPS5471594A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848969A (en) * 1981-09-18 1983-03-23 Matsushita Electric Ind Co Ltd Photoelectric transducer
JPS5897860A (en) * 1981-12-08 1983-06-10 Ricoh Co Ltd Photosensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848969A (en) * 1981-09-18 1983-03-23 Matsushita Electric Ind Co Ltd Photoelectric transducer
JPS5897860A (en) * 1981-12-08 1983-06-10 Ricoh Co Ltd Photosensor

Also Published As

Publication number Publication date
JPS5441878B2 (en) 1979-12-11

Similar Documents

Publication Publication Date Title
JPS55108780A (en) Thin film solar cell
JPS6435421A (en) Thin film transistor array
JPS54116890A (en) Photoelectric converter
RU95120363A (en) THIN FILMED ELECTROLUMINESCENT DISPLAY WITH HIGH CONTRAST AND METHOD FOR ITS MANUFACTURE
JPS52137279A (en) Semiconductor device for optical coupling
JPS53112056A (en) Gas discharging panel of self shift type
JPS5471594A (en) Production of photo sensor array
JPS5471593A (en) Production of photo sensor array
JPS5437698A (en) Liquid crystal display unit of matrix type
CA2002305A1 (en) Method to produce a display screen with a matrix of transistors provided with an optical mask
JPS6327871B2 (en)
JPS5632774A (en) Thin film type photovoltaic element and manufacture thereof
JPS6431457A (en) Manufacture of thin film transistor
JPS61181158A (en) Contact type image sensor
JPS5686794A (en) Optical recording medium
JPS53143242A (en) Production of optical diffusing plate
JPS5713776A (en) Photovoltaic device
JPS5610944A (en) Division of semiconductor device
JPS5788044A (en) Manufacture of glass mask
JPS56148868A (en) Manufacture of semiconductor device
JPS6472555A (en) Photodiode array
KR890005918A (en) Amorphous Silicon Solar Cell Manufacturing Method
JPS60171775A (en) Filter for light-emitting element
JPS5284760A (en) Formation of electrode for liquid crystal display element
JPS57141956A (en) Optical conductive element