JPS60171775A - Filter for light-emitting element - Google Patents
Filter for light-emitting elementInfo
- Publication number
- JPS60171775A JPS60171775A JP59027087A JP2708784A JPS60171775A JP S60171775 A JPS60171775 A JP S60171775A JP 59027087 A JP59027087 A JP 59027087A JP 2708784 A JP2708784 A JP 2708784A JP S60171775 A JPS60171775 A JP S60171775A
- Authority
- JP
- Japan
- Prior art keywords
- wavelengths
- filter
- different absorption
- amorphous silicon
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 229910020328 SiSn Inorganic materials 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 229910017875 a-SiN Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明はアモルファス・シリコンを用いた発光素子用フ
ィルタに関する、
〔背景技術〕
ディスプレイ用の可視発光ダイオードやプラスチックフ
ァイバ用発光ダイオード等の半導体発光素子においては
、いくつかの高度な特性、例えば高輝度であること、出
力が大きいこと、がめられており、特にファイバ用発光
ダイオードでは発光波長がファイバの低損失領域にあり
、かつ光検出器の高感度領域内にあること、そして発光
スペクトル幅は狭い方がよいことがめられている。[Detailed Description of the Invention] [Technical Field] The present invention relates to a filter for light emitting devices using amorphous silicon. [Background Art] In semiconductor light emitting devices such as visible light emitting diodes for displays and light emitting diodes for plastic fibers, Some advanced characteristics, such as high brightness and large output, are required, especially for fiber-use light-emitting diodes, where the emission wavelength is in the low-loss region of the fiber and within the high-sensitivity region of the photodetector. It is believed that the narrower the emission spectrum width, the better.
これらの問題を解決するために素子を構成する材料、例
えばＧａＡｌＡｓやＧａＰへの拡散不純物の種類や濃度
を変えることが種々試みられている。In order to solve these problems, various attempts have been made to change the type and concentration of the impurity diffused into the material constituting the device, such as GaAlAs or GaP.
このように素子自体の成分組成の変更以外に、発光素子
の発光面にフィルタを設けることにより、発光波長領域
の幅をコントロールしたり、不要な波長領域を削除する
ことが考えられる。In addition to changing the component composition of the element itself as described above, it is possible to control the width of the emission wavelength range or delete unnecessary wavelength ranges by providing a filter on the light-emitting surface of the light-emitting element.
しかし、従来の市販のフィルタは比較的に波長領域の広
い光源のために製造されたものであり、微妙なコントロ
ールを必要とする半導体発光素子用フィルタとしては必
ずしも適合しない。However, conventional commercially available filters are manufactured for light sources with a relatively wide wavelength range, and are not necessarily suitable as filters for semiconductor light emitting devices that require delicate control.
本Ｎ１１はα−８ｉ（アモルファスシリコン）ヲ利用す
ることにより、波長の選択的な吸収性がよ（、かの製造
に容易な半導体発光素子用フィルタを提供することにあ
る。The purpose of this N11 is to provide a filter for semiconductor light emitting devices that is easy to manufacture and has good wavelength selective absorption by utilizing α-8i (amorphous silicon).
本発明において開示される発明のうち代表的なものの概
要を簡単に説明すれば下記のとおりである。A brief overview of typical inventions disclosed in the present invention is as follows.
すなわち、透明基板又は発光ダイオードにおける透明層
の上に吸収波長の異なるαアモルファスシリコン膜を積
層して形成してフィルタとするもので、これにより発光
素子の波長領域をコントロールして良質の０１色光が得
られ、前記目的が達成できる。That is, a filter is formed by laminating α-amorphous silicon films with different absorption wavelengths on a transparent substrate or a transparent layer in a light-emitting diode, and this allows the wavelength range of the light-emitting element to be controlled to emit high-quality 01 color light. obtained, and the above objective can be achieved.
〔実施例１〕
第】図は本発明の一実施例を示すものであって、ガラス
基板の一生表面に反応性スパッタリング法にヨＩ’）、
アモルファスシリコン（α−８ｉ ） ヲ成長させる形
態を原理図で示すものである８すなわち、電極１，２に
電圧印加することよりつくられた電界中にガラス板３を
設置して通常２００〜３００℃加熱し、特定算囲気中で
シリコン（Ｓｉ）をスパッタすることによりガラス板上
に成長したアモルファスシリコン４膜を析出形成するも
ので、既存のスパック装Ｗ１をそのまま使用することが
できる。[Example 1] Figure 1 shows an example of the present invention, in which reactive sputtering was applied to the surface of a glass substrate.
This is a diagram showing the principle of growth of amorphous silicon (α-8i) 8. In other words, a glass plate 3 is placed in an electric field created by applying a voltage to electrodes 1 and 2, and the temperature is usually 200 to 300°C. By heating and sputtering silicon (Si) in a specific ambient atmosphere, four amorphous silicon films grown on a glass plate are deposited, and the existing sprocket W1 can be used as is.
スパッタ源とノＺろシリコン（Ｓｉ）には回転プレート
７上に異なる吸収波長をつくるための不純ｌ吻元素８を
含むシリコンを種々用意し、スパッタみ５を入れる炉６
中に適宜添加しなから回転プレート７を回転することに
より、ガラス板３上に吸収波長の異なる薄いアモルファ
スシリコン膜４を積層する。For silicon (Si), various types of silicon containing impurity elements 8 to create different absorption wavelengths are prepared on a rotating plate 7, and a sputtering source 5 is placed in a furnace 6.
Thin amorphous silicon films 4 having different absorption wavelengths are laminated on the glass plate 3 by adding them as appropriate and rotating the rotating plate 7.
上記光なる吸収波長をつくるための不純物は、たとえば
第２図に示すように窒素Ｎ１ゲルマニウム（Ｇｅ）、ス
ズ（Ｓｕ ）等があり、α−８ｉＮは５００ ｎ ｍ以
下の短い波長を吸収し、α−８ｉＧｅ。Impurities for creating the absorption wavelength of light include, for example, nitrogen, germanium (Ge), tin (Su), etc., as shown in Figure 2. α-8iN absorbs short wavelengths of 500 nm or less, α-8iGe.
α−８ｉ Ｓ ＋１はＦ＋ ００〜７００ ｎ ｍ以上
の長い波長を吸収する。α-8i S +1 absorbs long wavelengths from F+ 00 to 700 nm or more.
このようにして得られたアモルファスシリコン・フィル
タはたとえば高輝度可視発光ダイオードの発光面上に設
置し、不必要な波長を吸収し、必要な波長のみな通過さ
せる。The amorphous silicon filter thus obtained is placed, for example, on the light emitting surface of a high-intensity visible light emitting diode, absorbing unnecessary wavelengths and passing only the necessary wavelengths.
第３図はＧａＡｌＡｓ高輝度可視発光ダイオードにおけ
る発光スペクトルを示す。ピーク発光波長は６６０ ｎ
ｍであるが半値幅は６４０〜６８０ｎｍに及んでおり
、これを前記異なる吸収波長をもつフィルタを辿すこと
処よって適宜カットすることができる。FIG. 3 shows the emission spectrum of a GaAlAs high brightness visible light emitting diode. Peak emission wavelength is 660n
m, but the half-width ranges from 640 to 680 nm, and this can be appropriately cut by passing through filters having different absorption wavelengths.
〔実施例２〕
第３図はドーム状透明層からなる発光面を有する発光ダ
イオードのドーム状透明層上に直接にアモルファスシリ
コン膜を形成する場合の実施例を示す。同図ＶＣお（・
て、］０はドーム状透明層でＧ ａ Ａ、 ！Ｊ Ａ
ｓ液相エビｐ キ’／ −ｙ ル層（２ｏｏ〜３ｏ。[Example 2] FIG. 3 shows an example in which an amorphous silicon film is formed directly on a dome-shaped transparent layer of a light emitting diode having a light emitting surface made of a dome-shaped transparent layer. Same figure VC o(・
]0 is a dome-shaped transparent layer, G a A, ! J.A.
s liquid phase shrimp p k'/-y le layer (2oo to 3o.
μｍ）からなる。μm).
ｊ】はＺｎ拡散ｐ型層、１２は活性層でこの部分が発光
領域となる。１３はＴｅ拡敬■１型層、１４は中心′Ｃ
糺極取出し部となる高凸度Ｚｎ拡散ｐ＋型層でその周辺
に溝部１５を介して周辺部電極取出し部となる高鹸度Ｚ
ｏ拡散ｐ＋型層１６が形成される。１７はカソード′厄
極、１８はアノード電極である。j] is a Zn-diffused p-type layer, 12 is an active layer, and this portion becomes a light emitting region. 13 is Te expansion type 1 layer, 14 is center 'C
A highly convexity Zn-diffused p+ type layer which becomes the electrode extraction part, and a high saponity Z layer which becomes the peripheral electrode extraction part through the groove part 15 around it.
An o-diffused p+ type layer 16 is formed. 17 is a cathode electrode, and 18 is an anode electrode.
】９はアモルファスシリコン膜フィルタでドーム状透明
層１０の上妊前記実施例１で述べたスパッタリング法に
より、あるいはグロー放電法、ＣＶＤ法等により、異な
る吸収波長をもつ種々の不純物をトーンしたアモルファ
スシリコンを積層して薄膜として形成したものである。9 is an amorphous silicon film filter formed on the dome-shaped transparent layer 10. Amorphous silicon is coated with various impurities having different absorption wavelengths by the sputtering method described in Example 1, or by glow discharge method, CVD method, etc. It is formed by laminating layers to form a thin film.
このような構造をもつ発光ダイオードにおいて、活性層
で励起された光は矢印Ａに示すように透明層１０をｌ−
、アモルファスシリコン膜フィルタ】９を通して特定範
囲の波長をもつ光を射出判る。In a light emitting diode with such a structure, light excited in the active layer passes through the transparent layer 10 as shown by arrow A.
, amorphous silicon film filter] 9 to emit light having a wavelength within a specific range.
以上実施例で述べた本発明によれは下記の効果がもたら
される。The present invention described in the embodiments above provides the following effects.
（１１アモルファスシリコンは膜厚が薄くても光吸収効
果か大きく、ドープした不純物ｋＭぷことによって吸収
波長を任意Ｖこ変えることができる。したがって光源か
ら出る異なる波長をより分け、単色光又は特定範囲の波
長とすることができる。(11) Amorphous silicon has a large light absorption effect even if it is thin, and the absorption wavelength can be changed arbitrarily by V by adding kM of doped impurities. wavelength.
（２）アモルファスシリコンは比較的低い温度で透明基
板上に薄膜層を形成することができ、発光ダイオードに
おける発光面となる透明層上に直接に吸収フィルタとし
て形成することができる。(2) Amorphous silicon can be formed into a thin film layer on a transparent substrate at a relatively low temperature, and can be formed as an absorption filter directly on the transparent layer that becomes the light emitting surface of a light emitting diode.
本発明はディスプレイ用の可視発光ダイオード又はプラ
スチックファイバ用発光ダイオードのためのフィルタと
して直接的に又は間接の交換可能なフィルタとして利用
することができる。The invention can be used directly as a filter for visible light emitting diodes for displays or light emitting diodes for plastic fibers, or as an indirect replaceable filter.
第１図は本発明の一実施例を示すものであって、ガラス
板」二にアモルファスシリコン・フィルりＩｌｕを形成
する場合の原理説明図である１、第２図は各種不純物を
含むアモルファスシリコンの吸収効率−波長曲線図であ
る。
第３図はある発光素子における放射効率−波長曲線図で
あるー
第４図は本発明の他の一実施例を示すものであって、ア
モルファスシリコン・フィルタ膜を有する発光素子の拡
大断面図である。
１．２・・・電極、３・・・ガラス板、４・・・アモル
ファスシリコン膜、５・・・スパッタ源、６・・・炉、
７・・・回転プレート、８・・・不純物元素、１０・・
・ドーム状透明層、１１・・・ｐ型層、１２・・・活性
層、１３・・・ｎ型層、１４・・・ｐ＋型層、１５・・
・溝部、１６・・・ｐ＋型８４．１７． １８・・・電
極、１９・・・アモルファスシリコン膜フィルタ。
代理人 弁理士 高 橋 明 夫−＼
ノ
ー ２／
第 １ 図
第 ２ 図
入（ｙｔｍ＞Figure 1 shows an embodiment of the present invention, and is a diagram explaining the principle of forming an amorphous silicon fill Ilu on a glass plate. It is an absorption efficiency-wavelength curve diagram of. FIG. 3 is a radiation efficiency-wavelength curve diagram of a certain light emitting device. FIG. 4 is an enlarged sectional view of a light emitting device having an amorphous silicon filter film, showing another embodiment of the present invention. be. 1.2... Electrode, 3... Glass plate, 4... Amorphous silicon film, 5... Sputtering source, 6... Furnace,
7... Rotating plate, 8... Impurity element, 10...
・Dome-shaped transparent layer, 11...p type layer, 12...active layer, 13...n type layer, 14...p+ type layer, 15...
-Groove, 16...p+ type 84.17. 18... Electrode, 19... Amorphous silicon membrane filter. Agent Patent Attorney Akio Takahashi-\No 2/ Figure 1 Figure 2 (ytm>
Claims (1)
ァス・シリコン膜を積層してなる発光素子用フィルタ。 ２、上記透明基板はガラス薄板である特許請求の範囲第
１項に記載の発光素子用フィルタ。 ３、上記透明基板は発光ダイオードにおける発光面とな
る透明層である特許請求の範囲第１項に記載の発光素子
用フィルタ。[Claims] 1. A filter for a light emitting device, which is formed by laminating several amorphous silicon films having different absorption wavelengths on a transparent substrate. 2. The filter for a light emitting device according to claim 1, wherein the transparent substrate is a thin glass plate. 3. The filter for a light emitting device according to claim 1, wherein the transparent substrate is a transparent layer serving as a light emitting surface of a light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027087A JPS60171775A (en) | 1984-02-17 | 1984-02-17 | Filter for light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027087A JPS60171775A (en) | 1984-02-17 | 1984-02-17 | Filter for light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60171775A true JPS60171775A (en) | 1985-09-05 |
Family
ID=12211290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59027087A Pending JPS60171775A (en) | 1984-02-17 | 1984-02-17 | Filter for light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60171775A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463494A (en) * | 1992-07-13 | 1995-10-31 | Hughes Aircraft Company | Extrinsic semiconductor optical filter |
| EP1569281A2 (en) * | 2004-02-27 | 2005-08-31 | Osram Opto Semiconductors GmbH | Light emitting diode and method of manufacturing the same |
-
1984
- 1984-02-17 JP JP59027087A patent/JPS60171775A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463494A (en) * | 1992-07-13 | 1995-10-31 | Hughes Aircraft Company | Extrinsic semiconductor optical filter |
| EP1569281A2 (en) * | 2004-02-27 | 2005-08-31 | Osram Opto Semiconductors GmbH | Light emitting diode and method of manufacturing the same |
| EP1569281A3 (en) * | 2004-02-27 | 2011-03-23 | OSRAM Opto Semiconductors GmbH | Light emitting diode and method of manufacturing the same |
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