JPS6156467A - Photovoltaic generation plate - Google Patents
Photovoltaic generation plateInfo
- Publication number
- JPS6156467A JPS6156467A JP59179607A JP17960784A JPS6156467A JP S6156467 A JPS6156467 A JP S6156467A JP 59179607 A JP59179607 A JP 59179607A JP 17960784 A JP17960784 A JP 17960784A JP S6156467 A JPS6156467 A JP S6156467A
- Authority
- JP
- Japan
- Prior art keywords
- light
- solar cell
- photovoltaic
- film
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000005357 flat glass Substances 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010248 power generation Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 210000004907 gland Anatomy 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 241001164374 Calyx Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、光の透過性を何しつつ光発電を得ることが
できる光発電板の構成に関するものである・
〔従来技術〕
従来、窓ガラス等に入射する光の透過分を調姫するため
には、例え。ば表面にプラスチックフィルムをコーティ
ングしたり、ガラスにＩＩ′ｅ、ｃｖ等を添那し色ガラ
スにするなどしていたが、これらの方法では単に光を反
射、政乱させるのみで入射する尤のエネルギーｋｎ効に
活用することかで＠なかった。又、従来の単結晶や多結
晶の太陽′を池等では光を完全に両断してしまい、窓ガ
ラス等のコーテイング材としては不適でめったＯ
〔発明の概要〕
この発明に以上の点に鑑みなされたもので、ｄｅｌｌ［
の表向にアモルファスシリコン太陽′亀池等の所定量の
光を透過する光発電素子の腺を形成せしめることにより
、入射する元エネルギーをより有効に活用できる光発′
１板′ｆ、捉供すること金目的とするものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to the structure of a photovoltaic plate that can obtain photovoltaic power generation while maintaining light transmittance. [Prior Art] Conventionally, window glass For example, in order to adjust the transmitted amount of light incident on a light source, etc. For example, the surface was coated with a plastic film, or the glass was doped with II'e, CV, etc. to make colored glass, but these methods only reflected light and caused political turmoil. It wasn't about using the energy effectively. In addition, the light of conventional single crystal or polycrystalline sunlight is completely cut in two by ponds, etc., making it unsuitable and rare as a coating material for window glass, etc. [Summary of the Invention] In view of the above points, this invention In what was done, dell [
By forming a gland of a photovoltaic element on the surface of an amorphous silicon solar cell, which transmits a predetermined amount of light, a light-emitting device that can utilize incident source energy more effectively.
1 board'f, the purpose of which is to capture and provide.
アモルファスシリコン（以下ａ −Ｓｉと記す〕太陽電
池のような薄膜構造の太陽電池では、電池としての必要
膜厚は薄く、光の透過が可能でろりめＯ′ＩＮ厚は蒸着
量によって容易に変えられ、ガラス等の透明板のコーテ
イング材として使用できる。In a solar cell with a thin film structure such as an amorphous silicon (hereinafter referred to as a-Si) solar cell, the required film thickness for the battery is thin, allowing light to pass through, and the O'IN thickness can be easily changed depending on the amount of evaporation. It can be used as a coating material for transparent plates such as glass.
以下に傳暎としてａ −８１太錫電池を用いた場合の本
発明の一夫施例における元売電板につき詳述する。The following is a detailed description of the power supply board in the Kazuo embodiment of the present invention when an A-81 thick tin battery is used.
一般に地表にふシそそぐ太陽光線の分光特性は波長範囲
が０．８μｍ〜３μｍ程度であり、０．５μｍの波長に
おいてそのスペクトルの最高強度を示す。このうち我々
の目に感じとれる可視光唄Ｈ，ｒｃはぼ０．４μｍ〜０
．８μｍでるる、ＩＬ−８ｉ太陽電池の光吸収スペクト
ルは単結晶太陽電池のそれと比べ太陽ふく射スペクトル
が最大強度を示す０．５μｍにおいて約１０倍の特性を
もっており、可視光域では荷動に作用し、単結晶及及び
多結晶太陽電池においては７０〜１００μｍの膜厚が必
要であるがａ −８１太陽電池では〜１μｍであり、十
分に光を透過させることができる。Generally, the spectral characteristics of sunlight shining on the earth's surface have a wavelength range of about 0.8 μm to 3 μm, and the maximum intensity of the spectrum is shown at a wavelength of 0.5 μm. Of these, the visible light song H,rc that can be felt by our eyes is about 0.4μm~0
．． The light absorption spectrum of the 8 μm IL-8i solar cell is about 10 times that of a single crystal solar cell at 0.5 μm, where the solar radiation spectrum has its maximum intensity, and it does not affect loading in the visible light region. Although a film thickness of 70 to 100 μm is required for single crystal and polycrystalline solar cells, the film thickness is ~1 μm for an a-81 solar cell, which allows sufficient light to pass through.
また鏡面上に形成しｆｃａ −８１太陽電池の表面反射
率は８０−４０％であるが表面に凹凸を与えることによ
り１０〜２０％に減じることがでさ、さらに工Ｔ Ｏ、
ａｎ Ｏｌなどの反射防止ｆｉｌｌコーティングすると
０〜５％にでき、入射光は０→１００％の範囲で選択で
きる。以上の条件を考慮した構成の例を第１図に、恩ガ
ラスとして用いる場合の構成の例を第２図に示す。Furthermore, the surface reflectance of an FCA-81 solar cell formed on a mirror surface is 80-40%, but it can be reduced to 10-20% by providing unevenness to the surface.
If anti-reflection fill coating such as anOl is applied, it can be reduced to 0 to 5%, and the incident light can be selected from 0 to 100%. An example of a configuration that takes the above conditions into consideration is shown in FIG. 1, and an example of a configuration when used as a glass is shown in FIG. 2.
第１図において、ＩＩＩは表面に光発光素子としてのＩ
Ｌ −Ｓｉ太陽電池（２１をコーティングした透明板と
してのガラス基板でるる。ここで、”−Ｊ太陽電池（２
１ｒｉ、外表面から順次、透明４電腺（（２ａ）
”及び（Ｂｅ ） ） ｐ層（ｇｂ）、ｔＡｉ（２ｃ）
及びｎ４（２ｄ）で構成されている一七して、ガラス基
板 １＋１１とａ −８１太陽電池（２］とにより
元売電板（３）を構成する・
（４）は入射光、（５）は透過光である。In FIG. 1, III has I as a light emitting element on the surface.
A glass substrate as a transparent plate coated with L-Si solar cell (21).
1ri, transparent 4-electrode glands ((2a)
” and (Be)) p layer (gb), tAi (2c)
and n4 (2d), the glass substrate 1+11 and the a-81 solar cell (2) constitute the main electricity board (3). (4) is the incident light, (5) is the transmitted light.
第２図において、元売電板１３１は踵屋（６）の窓ガラ
スとして使用されている。In FIG. 2, the main electricity sales board 131 is used as a window glass of a heel shop (6).
（７）は＆ −Ｓｉ太陽電池（２）から電気を取シ出す
際の電極、（８）はその電極（７）ヲ悪の開閉に合わせ
て定食させるためのレール、もしくは伸緬自在憂体等の
萼猟都、（９）はバッテリ＋、ｔｌｏｌは辱猟部（８）
とバッテリー（９）とを接続するリード線である。(7) is the electrode used to extract electricity from the &-Si solar cell (2), and (8) is the rail or extendable body used to feed electricity according to the opening and closing of the electrode (7). etc.'s Calyx Hunting City, (9) is Battery +, tlol is Humiliating Hunting Club (8)
This is a lead wire that connects the battery (9) and the battery (9).
ａ −Ｓｉ太陽電池（２）を表向に形成した場合の尤の
透過５ｃ考えると、前述のよりに、表面反射率ｒｃ Ｏ
−４０％まで変化し、狡面、形状及び透明都電瞑（２ａ
）を適当に選べば、容易に必要な反射率が遍べる。また
、ａ−８ｉ太陽電池（２）の光吸収係数αは、入射する
元の波長が０．３μｍ〜１μｍの間ＩＣ１０〜１０ （
ｙｎ ）の範囲で変化する。Considering the expected transmission 5c when the a-Si solar cell (2) is formed facing up, the surface reflectance rc O
- Changes up to 40%, cunning, shape and transparent metropolitan area (2a
), the required reflectance can be easily obtained. In addition, the light absorption coefficient α of the a-8i solar cell (2) is IC10 to 10 (
yn).
−万、ａ−Ｂｌ太陽゛成池（２１の膜厚はそｎぞれ透明
１ｔｓ（２ａ）Ａび（２ｅ〕が〜ｏ、ａμｍｓｐｍ（２
ｂ）が〜ｏ、 １ μｍ 、 ｉ層（２Ｃ）が〜１．Ｏ
μｎ。-10,000, a-Bl solar growth pond (21) has a transparent film thickness of 1ts (2a) and (2e), respectively, ~o, aμmspm (2
b) is ~o, 1 μm, i-layer (2C) is ~1. O
μn.
ｎ旙（２ｄ）が〜０．１μｍの範囲にあり、ａ −８３
゜太陽１ＪＬ＠ ｉ２１として０．１μｍ以上の適当な
厚膜を選ぶことができる。可視光＠坂におけるａ −Ｓ
ｉ太陽゛域池ｆ２Ｊの膜厚と透過光の間係は０．４μｍ
の波長の尤に対する光吸収係数が８ ｘ １０ （ａｍ
）。n 旙(2d) is in the range of ~0.1 μm, a −83
゜Taiyo 1JL@i21 An appropriate thick film of 0.1 μm or more can be selected. Visible light @a-S on slope
The relationship between the film thickness of the solar field pond f2J and the transmitted light is 0.4 μm
The light absorption coefficient for the wavelength of 8 x 10 (am
).
０、５μｍの波長の光に対する光吸収係数が、８Ｘ １
Ｇ （（３））、Ｏ，Ｓμｍの波長の光に対する光吸収
係数が８ ｘ １０ Ｃｍ ）、 ０．７ ｐｍの波長
の光に対する光吸収係数が９ ｘ １０ （ｃ！ｎ）、
０．８ μｍの反灸の光に対する光吸収係数が２．６
Ｘ １０ （α ）でるることから、表面の反射率を
５％とした場合、薄膜の膜厚がＯ，Ｓμｍの時、入射エ
ネルギーの＃′］２５％が透過し、薄膜の膜厚が０．５
μｍの時、入射エネルギーの約２０％がａｍする・さら
に＃映の膜厚が１μｍＶＣなると入射光エネルギーの約
１０％が透過する。以上のデータを巣８図に示す。The light absorption coefficient for light with a wavelength of 0.5 μm is 8X 1
G ((3)), the optical absorption coefficient for light with a wavelength of O, S μm is 8 x 10 Cm), the optical absorption coefficient for light with a wavelength of 0.7 pm is 9 x 10 (c!n),
The light absorption coefficient for moxibustion light of 0.8 μm is 2.6
Since X 10 (α), when the surface reflectance is 5%, when the thickness of the thin film is O, S μm, 25% of the incident energy is transmitted, and the thickness of the thin film is 0. .5
When the film thickness is 1 μm, approximately 20% of the incident light energy is transmitted through the am. Further, when the film thickness of the film is 1 μm, approximately 10% of the incident light energy is transmitted. The above data are shown in Figure 8.
以上のように、ガラス基板Ｉｌｌ上に形成するａ−８１
太錫畦池（２）の膜厚を変化させることにより、発電効
果と共に〜２５％の透過光が得られ、元発亀巣子として
の他、恩ガラスとしても開用でき、入射光の利用効率が
著るしく改善され、さらに従来の太陽電池における問題
点であった設瞳面積の確保も窓ガラスのスペース全周い
ることで解決される。As described above, a-81 formed on the glass substrate Ill
By changing the film thickness of Taixiao Pond (2), ~25% of transmitted light can be obtained as well as a power generation effect, and it can be used not only as original Kamesuko but also as glass, making it possible to utilize incident light. Efficiency is significantly improved, and the problem of securing the pupil area, which was a problem with conventional solar cells, is solved by making the space around the window glass all the way around.
この発明は以上説明し次ように、透明板の表面にアモル
ファスシリコン太陽電池等の所定量の光を透過する光発
電素子の膜を形成せしめたので、入射する元エネルギー
を発電のみならずより有効に活用できる効果がある。As explained above, this invention forms a film of a photovoltaic element such as an amorphous silicon solar cell that transmits a predetermined amount of light on the surface of a transparent plate, so that the incident original energy can be used not only to generate power but also to be more effective. It has an effect that can be used for.
第１図はこの発明の一実施例における光発電板の構成図
、第２図は第１図の光発′亀板を窓ガラスに適用した場
合の構成図、第３図はａ−ＳＬ太陽延池の光吸収係数等
を示す特性図である。図において、ｔｌ）は透明板、（
２）は光発電素子からなる腺、（３１は光発電板である
。
なお、図中同一符号は同−又は相当部分を示′１ す
ＯFig. 1 is a block diagram of a photovoltaic plate according to an embodiment of the present invention, Fig. 2 is a block diagram of the photovoltaic plate shown in Fig. 1 applied to a window glass, and Fig. 3 is a block diagram of the a-SL solar panel. FIG. 3 is a characteristic diagram showing the optical absorption coefficient of Nobeike. In the figure, tl) is a transparent plate, (
2) is a gland consisting of a photovoltaic element, (31 is a photovoltaic plate. In addition, the same reference numerals in the figures indicate the same or corresponding parts.
Claims (5)
を透過する膜を形成せしめたことを特徴とする光発電板
。(1) A photovoltaic plate characterized in that a film made of a photovoltaic element and transmitting a predetermined amount of light is formed on the surface of a transparent plate.
ることを特徴とする特許請求の範囲第１項記載の光発電
板。(2) The photovoltaic board according to claim 1, wherein the photovoltaic element is an amorphous silicon solar cell.
許請求の範囲第１項又は第２項記載の光発電板。(3) The photovoltaic plate according to claim 1 or 2, wherein the transparent plate is made of a glass substrate.
許請求の範囲第３項記載の光発電板。(4) The photovoltaic board according to claim 3, wherein the glass substrate is a window glass.
特許請求の範囲第１項又は第２項記載の光発電板。(5) The photovoltaic plate according to claim 1 or 2, wherein the transparent plate is made of plastic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59179607A JPS6156467A (en) | 1984-08-28 | 1984-08-28 | Photovoltaic generation plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59179607A JPS6156467A (en) | 1984-08-28 | 1984-08-28 | Photovoltaic generation plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6156467A true JPS6156467A (en) | 1986-03-22 |
Family
ID=16068701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59179607A Pending JPS6156467A (en) | 1984-08-28 | 1984-08-28 | Photovoltaic generation plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6156467A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01110450U (en) * | 1988-01-20 | 1989-07-26 | ||
| JPH02162215A (en) * | 1988-12-16 | 1990-06-21 | Kimmon Mfg Co Ltd | Flowmeter |
| JP2006144538A (en) * | 2004-11-19 | 2006-06-08 | General Electric Co <Ge> | Building member including solar energy converter and roofing material |
-
1984
- 1984-08-28 JP JP59179607A patent/JPS6156467A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01110450U (en) * | 1988-01-20 | 1989-07-26 | ||
| JPH02162215A (en) * | 1988-12-16 | 1990-06-21 | Kimmon Mfg Co Ltd | Flowmeter |
| JP2006144538A (en) * | 2004-11-19 | 2006-06-08 | General Electric Co <Ge> | Building member including solar energy converter and roofing material |
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