JPH0629562A - Solar battery and its manufacture - Google Patents

Solar battery and its manufacture

Info

Publication number
JPH0629562A
JPH0629562A JP4182267A JP18226792A JPH0629562A JP H0629562 A JPH0629562 A JP H0629562A JP 4182267 A JP4182267 A JP 4182267A JP 18226792 A JP18226792 A JP 18226792A JP H0629562 A JPH0629562 A JP H0629562A
Authority
JP
Japan
Prior art keywords
antireflection film
layer
grooves
silicon substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4182267A
Other languages
Japanese (ja)
Other versions
JP3238945B2 (en
Inventor
Makoto Nishida
誠 西田
Takayuki Minamimori
孝幸 南森
Toshihiro Machida
智弘 町田
Tadashi Tonegawa
正 利根川
Yoshihiko Takeda
喜彦 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP18226792A priority Critical patent/JP3238945B2/en
Publication of JPH0629562A publication Critical patent/JPH0629562A/en
Application granted granted Critical
Publication of JP3238945B2 publication Critical patent/JP3238945B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To form an antireflection film with low reflectance without lowering an open circuit voltage to improve an element efficiency by using a transparent body having many grooves as the antireflection film in stead of providing the surface of a silicon substrate with many grooves. CONSTITUTION:N<+>-diffused layer 2, passivation film 4 and antireflection film 5 are laminated on the surface of P-type polycrystalline silicon substrate 1, which is provided with a transparent resin layer 7 having many grooves in its surface. An electrode 6 is provided in the manner of passing through the layer 7 and BSF layer 3 is provided in the rear face of the electrode. Then, a liquid transparent epoxy resin is applied to the light-receiving face side of an element by the use of a spinner and solidified and deposited, and many minute grooves are formed on the surface of the resin by the use of a dicing device. Thus, it is possible to raise the open circuit voltage of the element and also to raise the efficiency of a solar battery.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、2層の反射防止膜を有
する太陽電池およびその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell having a two-layer antireflection film and a method for manufacturing the same.

【0002】[0002]

【従来の技術】太陽電池の反射防止のため、その表面に
テクスチャ構造が用いられている。しかし、多結晶太陽
電池に用いられる多結晶シリコン基板は、結晶粒ごとに
面方位が異なるため、単結晶に用いられるテクスチャエ
ッチングでは、基板全体を均一な低反射率の表面にはで
きない。そこで、従来のテクスチャ表面処理方法に代
え、ダイシング装置等を用いて、多結晶シリコン基板表
面全体に多数の溝を形成した低反射率構造により、特性
向上を実現している。さらに反射損失を低減し、特性を
向上させるために、従来のTiO2 膜等の単層反射防止
膜に代えて、MgF 2 /TiO2 等の二層反射防止膜が
用いられている。
2. Description of the Related Art To prevent the reflection of solar cells,
A texture structure is used. But the polycrystalline sun
The polycrystalline silicon substrate used for the battery is
Since the plane orientation is different, the texture texture used for single crystals
In etching, the entire substrate is exposed to a uniform low reflectance surface.
I can't come. Therefore, instead of the conventional texture surface treatment method,
, Using a dicing machine, etc.
Due to the low reflectance structure with many grooves formed on the entire surface, the characteristics
Has realized an improvement. Further reduce the reflection loss and improve the characteristics
Conventional TiO to improve2Anti-reflection of single layer such as film
Instead of a film, MgF 2/ TiO2Such as a two-layer antireflection film
It is used.

【0003】図3は、従来の一例の略断面図である。P
型多結晶シリコン基板1の表面は、多数の溝が形成さ
れ、その表面にN+ 拡散層2が形成され、さらにその上
に、パッシベーション膜4,たとえばTiO2 による第
1の反射防止膜5,たとえばMgF2 による第2の反射
防止膜5−1等が積層され、これらの層を貫いてN+拡
散層2に至る電極6が設けられている。裏面にはBSF
層3が設けられている。裏面電極は省略してある。
FIG. 3 is a schematic sectional view of a conventional example. P
A large number of grooves are formed on the surface of the type polycrystalline silicon substrate 1, an N + diffusion layer 2 is formed on the surface, and a passivation film 4, a first antireflection film 5 made of TiO 2 , for example, is further formed thereon. For example, a second antireflection film 5-1 made of MgF 2 and the like are stacked, and an electrode 6 that penetrates these layers and reaches the N + diffusion layer 2 is provided. BSF on the back
Layer 3 is provided. The back surface electrode is omitted.

【0004】[0004]

【発明が解決しようとする課題】多結晶シリコン基板表
面全体に多数の溝を形成することは、表面反射率の低減
には有効であるが、PN接合面積が増加するために開放
電圧が低下するという欠点がある。
Forming a large number of grooves on the entire surface of the polycrystalline silicon substrate is effective in reducing the surface reflectance, but the open circuit voltage is lowered because the PN junction area is increased. There is a drawback that.

【0005】[0005]

【課題を解決するための手段】本発明の太陽電池におい
ては、シリコン基板の表面に多数の溝を設ける代わり
に、第2の反射防止膜として多数の溝を有する透明体を
用いた。
In the solar cell of the present invention, a transparent body having a large number of grooves is used as the second antireflection film instead of providing a large number of grooves on the surface of the silicon substrate.

【0006】[0006]

【作用】本発明によれば、シリコン基板自身には溝が形
成されていないから、PN接合面積が増加せず、多結晶
太陽電池の開放電圧を低下させることなく、低反射率の
反射防止膜を形成することができ、素子効率を改善する
ことができる。
According to the present invention, since no groove is formed in the silicon substrate itself, the PN junction area does not increase, the open circuit voltage of the polycrystalline solar cell is not lowered, and the antireflection film having a low reflectance is obtained. Can be formed, and the device efficiency can be improved.

【0007】[0007]

【実施例】図1は、本発明による太陽電池の略断面図で
ある。P型多結晶シリコン基板1の表面には、N+ 拡散
層2,パッシベーション膜4,第1の反射防止膜5が積
層され、その表面に多数の溝7−1,7−1,…を有す
る透明樹脂層7が設けられている。これらの層を貫い
て、電極6が設けられ裏面にはBSF層3が設けられて
いる。裏面電極は省略している。
1 is a schematic sectional view of a solar cell according to the present invention. An N + diffusion layer 2, a passivation film 4, and a first antireflection film 5 are laminated on the surface of the P-type polycrystalline silicon substrate 1, and a large number of grooves 7-1, 7-1, ... Are provided on the surface thereof. A transparent resin layer 7 is provided. An electrode 6 is provided through these layers, and a BSF layer 3 is provided on the back surface. The back surface electrode is omitted.

【0008】以下はその製法の一例である。まず、図2
(a)に示すように、P型多結晶シリコン基板1の表面
にN+ 拡散層2を形成後、酸性雰囲気中でN+ 拡散層2
の表面にパッシベーション膜4となるSiO2 膜を約1
50Å形成した。その後、第1層の反射防止膜5とし
て、TiO2 を常圧CVDで形成した。次に、裏面にB
SF層3となるP+ 層を形成し、受光面側には銀ペース
トを焼成貫通させ、さらにはんだディップを行ない電極
6を形成した。
The following is an example of the manufacturing method. First, FIG.
(A), the following form N + diffusion layer 2 on the surface of the P-type polycrystalline silicon substrate 1, N + diffusion layer in an acid atmosphere 2
Approximately 1 SiO 2 film to be the passivation film 4 on the surface of
50 Å formed. After that, TiO 2 was formed as the first layer antireflection film 5 by atmospheric pressure CVD. Next, B on the back
A P + layer to be the SF layer 3 was formed, a silver paste was fired and penetrated on the light-receiving surface side, and further solder dipping was performed to form the electrode 6.

【0009】次に、この素子の受光面側に、液状透明エ
ポキシ樹脂を、スピンナを用いて塗布し、これを130
℃で3時間乾燥,固化して約200μm堆積させた。こ
の樹脂は屈折率1.5程度の透明樹脂であれば他の樹脂
を用いてもよく、または、その他の物質を用いても構わ
ない。そして、この樹脂表面にタイシング装置を用い微
細な多数の溝を形成する。
Next, a liquid transparent epoxy resin is applied to the light receiving surface side of this element by using a spinner, and this is applied to
It was dried at 3 ° C. for 3 hours and solidified to deposit about 200 μm. As this resin, another resin may be used as long as it is a transparent resin having a refractive index of about 1.5, or another substance may be used. Then, a large number of fine grooves are formed on the resin surface by using a tying device.

【0010】図2(b)は溝の形成方法を示す側面図で
ある。この加工には、円形の金属板の周囲にダイヤモン
ドの微粒子を付着させた円板状のブレード8を用い、約
30000rpm程度の高速度で回転させて形成した。
ブレードの形状は、図に示すように、溝の斜面の傾斜角
θ1 が55°となるように、ブレード8の刃先角θ2
70°のものを使用し、また、溝の深さdは約70μm
とした。傾斜角θ1 は、45°以上であれば反射率を低
減することができる。
FIG. 2B is a side view showing the method of forming the groove. For this processing, a disk-shaped blade 8 having diamond fine particles attached to the periphery of a circular metal plate was used and rotated at a high speed of about 30,000 rpm.
As for the shape of the blade, as shown in the figure, the blade 8 has a cutting edge angle θ 2 of 70 ° so that the inclination angle θ 1 of the groove is 55 °, and the depth d of the groove is Is about 70 μm
And If the inclination angle θ 1 is 45 ° or more, the reflectance can be reduced.

【0011】なお、液状透明樹脂を塗布乾燥後溝を形成
する代わりに、多数の溝を形成した透明体を貼付けるこ
ともできる。
Instead of forming the grooves after applying and drying the liquid transparent resin, a transparent body having a large number of grooves may be attached.

【0012】単結晶シリコン基板にも応用できる。It can also be applied to a single crystal silicon substrate.

【0013】[0013]

【発明の効果】下記の表1は、本発明による素子特性と
従来の素子の特性との比較を示す。
The following Table 1 shows a comparison between the characteristics of the device according to the present invention and the characteristics of the conventional device.

【0014】[0014]

【表1】 この表から、本発明により従来の構造と同等の低反射率
で、より開放電圧の高い素子を作成することができるこ
とがわかる。これにより太陽電池の高効率化が図れる。
[Table 1] From this table, it is understood that the present invention makes it possible to fabricate a device having a low reflectance equivalent to that of the conventional structure and a higher open circuit voltage. As a result, the efficiency of the solar cell can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による一実施例の略断面図である。FIG. 1 is a schematic cross-sectional view of an embodiment according to the present invention.

【図2】(a)は第2の反射防止膜を形成する前の太陽
電池の断面図であり、(b)は溝の形成方法を示す側面
図である。
FIG. 2A is a cross-sectional view of a solar cell before forming a second antireflection film, and FIG. 2B is a side view showing a method of forming a groove.

【図3】従来の太陽電池の一例の略断面図である。FIG. 3 is a schematic cross-sectional view of an example of a conventional solar cell.

【符号の説明】[Explanation of symbols]

1 P型多結晶シリコン基板 2 N+ 拡散層 3 BSF層 4 パッシベーション膜 5 反射防止膜 6 電極 7 透明樹脂層1 P-type polycrystalline silicon substrate 2 N + diffusion layer 3 BSF layer 4 passivation film 5 antireflection film 6 electrode 7 transparent resin layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 利根川 正 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 (72)発明者 竹田 喜彦 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Tadashi Tonegawa 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Within Sharp Corporation (72) Yoshihiko Takeda 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Within the corporation

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板の受光面側に形成したPN接合と、
PN接合の表面に形成された第1の反射防止膜と、第1
の反射防止膜の表面に設けた反射低減用の多数の溝を有
する透明層とを有することを特徴とする太陽電池。
1. A PN junction formed on the light receiving surface side of a substrate,
A first antireflection film formed on the surface of the PN junction;
And a transparent layer having a large number of grooves for reducing reflection provided on the surface of the antireflection film.
【請求項2】 PN接合を形成した基板の表面に第1の
反射防止膜を形成し、その表面に形成した第2の反射防
止膜となる透明層に反射低減用の多数の溝を形成するこ
とを特徴とする太陽電池の製造方法。
2. A first antireflection film is formed on the surface of a substrate on which a PN junction is formed, and a large number of grooves for reducing reflection are formed on a transparent layer formed on the surface and serving as a second antireflection film. A method of manufacturing a solar cell, comprising:
【請求項3】 PN接合を形成した基板の表面に第1の
反射防止膜を形成し、その表面に反射低減用の多数の溝
を有する第2の反射防止膜となる透明体を貼付けること
を特徴とする太陽電池の製造方法。
3. A first antireflection film is formed on a surface of a substrate having a PN junction, and a transparent body serving as a second antireflection film having a large number of grooves for reducing reflection is attached to the surface. A method for manufacturing a solar cell, comprising:
JP18226792A 1992-07-09 1992-07-09 Solar cell and method of manufacturing the same Expired - Fee Related JP3238945B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18226792A JP3238945B2 (en) 1992-07-09 1992-07-09 Solar cell and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18226792A JP3238945B2 (en) 1992-07-09 1992-07-09 Solar cell and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH0629562A true JPH0629562A (en) 1994-02-04
JP3238945B2 JP3238945B2 (en) 2001-12-17

Family

ID=16115273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18226792A Expired - Fee Related JP3238945B2 (en) 1992-07-09 1992-07-09 Solar cell and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3238945B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0911884A3 (en) * 1997-10-27 1999-07-21 Sharp Kabushiki Kaisha Photoelectric converter and method of manufacturing the same
WO2005083799A1 (en) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
WO2010083120A3 (en) * 2009-01-16 2010-10-21 Genie Lens Technologies, Llc Photovoltaic (pv) enhancement films for enhancing optical path lengths and methods of manufacturing pv enhancement films
US7904871B2 (en) 2009-01-16 2011-03-08 Genie Lens Technologies, Llc Computer-implemented method of optimizing refraction and TIR structures to enhance path lengths in PV devices
US7968790B2 (en) 2009-01-16 2011-06-28 Genie Lens Technologies, Llc Photovoltaic (PV) enhancement films for enhancing optical path lengths and for trapping reflected light
US8198115B2 (en) 2008-04-25 2012-06-12 Ulvac, Inc. Solar cell, and method and apparatus for manufacturing the same
US8338693B2 (en) 2009-01-16 2012-12-25 Genie Lens Technology, LLC Solar arrays and other photovoltaic (PV) devices using PV enhancement films for trapping light

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0911884A3 (en) * 1997-10-27 1999-07-21 Sharp Kabushiki Kaisha Photoelectric converter and method of manufacturing the same
US6107563A (en) * 1997-10-27 2000-08-22 Sharp Kabushiki Kaisha Photoelectric converter having light diffusion layer
WO2005083799A1 (en) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
US8198115B2 (en) 2008-04-25 2012-06-12 Ulvac, Inc. Solar cell, and method and apparatus for manufacturing the same
WO2010083120A3 (en) * 2009-01-16 2010-10-21 Genie Lens Technologies, Llc Photovoltaic (pv) enhancement films for enhancing optical path lengths and methods of manufacturing pv enhancement films
US7904871B2 (en) 2009-01-16 2011-03-08 Genie Lens Technologies, Llc Computer-implemented method of optimizing refraction and TIR structures to enhance path lengths in PV devices
US7968790B2 (en) 2009-01-16 2011-06-28 Genie Lens Technologies, Llc Photovoltaic (PV) enhancement films for enhancing optical path lengths and for trapping reflected light
US8048250B2 (en) 2009-01-16 2011-11-01 Genie Lens Technologies, Llc Method of manufacturing photovoltaic (PV) enhancement films
CN102356473A (en) * 2009-01-16 2012-02-15 吉尼透镜技术有限责任公司 Photovoltaic (pv) enhancement films for enhancing optical path lengths and methods of manufacturing pv enhancement films
US8338693B2 (en) 2009-01-16 2012-12-25 Genie Lens Technology, LLC Solar arrays and other photovoltaic (PV) devices using PV enhancement films for trapping light
US8921681B2 (en) 2009-01-16 2014-12-30 Glt Future, Llc Photovoltaic (PV) enhancement films or protective covers for enhancing solar cell efficiences

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