JPH0595127A - Manufacture of photoelectric conversion device - Google Patents
Manufacture of photoelectric conversion deviceInfo
- Publication number
- JPH0595127A JPH0595127A JP3255348A JP25534891A JPH0595127A JP H0595127 A JPH0595127 A JP H0595127A JP 3255348 A JP3255348 A JP 3255348A JP 25534891 A JP25534891 A JP 25534891A JP H0595127 A JPH0595127 A JP H0595127A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- semiconductor substrate
- substrate
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、光電変換素子に関
し、特に、その素子の高効率化および低価格化の向上を
図る光電変換素子の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion element, and more particularly to a method of manufacturing a photoelectric conversion element for improving the efficiency and cost of the element.
【０００２】[0002]
【従来の技術】近年、光電変換素子である太陽電池の高
効率化、低価格化の向上を同時に図るための手段とし
て、太陽電池の薄型化が挙げられている。結晶シリコン
太陽電池における薄型化は、基板の厚さを減少させるこ
とにある。このように、基板の厚さを減少させること
で、材料のコストを低下させ、太陽電池としての価格の
低下を招来している。2. Description of the Related Art In recent years, thinning of solar cells has been mentioned as a means for simultaneously improving efficiency and cost reduction of solar cells which are photoelectric conversion elements. Thinning in crystalline silicon solar cells consists in reducing the thickness of the substrate. By reducing the thickness of the substrate as described above, the cost of the material is reduced and the price of the solar cell is reduced.
【０００３】ここで、シリコン基板中で、光起電力効果
により発生したキャリアは、シリコン基板中を拡散して
集められるため、シリコン基板の厚さはキャリアの拡散
長よりも薄くする必要がある。しかしながら、シリコン
基板の厚さの低減は、基板に入出力した光のうちで長波
長を有する光は拡散長が長くシリコン基板を透過し、光
起電力効果に寄与せず、入射した光のうち実際光起電力
効果に寄与し起電力を生じさせる効率が悪いという問題
点があった。そこで、シリコン基板の裏面側に、シリコ
ン基板を透過した光を再びシリコン基板内へ反射させ再
度光起電力効果に寄与させる反射膜を設け、光閉じ込め
構造を有する太陽電池が開発されている。Since carriers generated by the photovoltaic effect in the silicon substrate are diffused and collected in the silicon substrate, the thickness of the silicon substrate needs to be smaller than the diffusion length of the carriers. However, the reduction of the thickness of the silicon substrate is because light having a long wavelength out of the light input to and output from the substrate has a long diffusion length and penetrates the silicon substrate, does not contribute to the photovoltaic effect, and In fact, there is a problem in that the efficiency of generating electromotive force by contributing to the photovoltaic effect is poor. Therefore, a solar cell having a light confining structure has been developed in which a reflective film is provided on the back surface side of the silicon substrate to reflect the light transmitted through the silicon substrate again into the silicon substrate and contribute to the photovoltaic effect again.
【０００４】上記構造を有する太陽電池の構造は、図７
を参照して、ｐ型シリコン基板１の受光面側にｎ+ 型の
半導体層３が形成されている。また、ｎ+ 型の半導体層
３の受光面側には、Ｓｉ3 Ｎ4のパッシベーション膜４
および反射低減のための反射防止膜５が形成されてい
る。さらに、この反射防止膜５およびｎ+ 型の半導体層
３を貫通しｎ+ 型の半導体層３と接する所定の形状の受
光面電極７が形成されている。The structure of the solar cell having the above structure is shown in FIG.
Referring to, an n + type semiconductor layer 3 is formed on the light receiving surface side of the p type silicon substrate 1. On the light-receiving surface side of the n + type semiconductor layer 3, a passivation film 4 of Si 3 N 4 is formed.
And an antireflection film 5 for reducing reflection is formed. Further, a light-receiving surface electrode 7 having a predetermined shape is formed which penetrates the antireflection film 5 and the n + type semiconductor layer 3 and is in contact with the n + type semiconductor layer 3.
【０００５】また一方、ｐ型シリコン基板１の裏面側に
はｐ+ 型のＢＳＦ（バックサーフェイスフィールド）層
２が形成され、さらに、このＢＳＦ層２の裏面側にパッ
シベーション膜４が形成されている。また、光起電力効
果により得られる起電力を受光面電極７との間で取出す
ための裏面電極が、パッシベーション膜４を貫通し、Ｂ
ＳＦ層２に接して所定の形状に設けられている。さら
に、パッシベーション膜４および裏面電極６を覆うよう
に半導体基板内を透過してきた光を反射させるための反
射層９が形成されている。On the other hand, a p + type BSF (back surface field) layer 2 is formed on the back side of the p type silicon substrate 1, and a passivation film 4 is further formed on the back side of the BSF layer 2. . Further, a back surface electrode for taking out an electromotive force obtained by the photovoltaic effect with the light receiving surface electrode 7 penetrates the passivation film 4, and B
It is provided in a predetermined shape in contact with the SF layer 2. Further, a reflection layer 9 for reflecting the light transmitted through the semiconductor substrate is formed so as to cover the passivation film 4 and the back surface electrode 6.
【０００６】上記構成よりなる光電変換素子の製造方法
は、まずｐ型シリコン基板１の裏面側にＡｌなどをドー
ピングしｐ+ 型層からなるＢＳＦ層を形成する。In the method of manufacturing the photoelectric conversion element having the above structure, first, the back side of the p-type silicon substrate 1 is doped with Al or the like to form a BSF layer of a p + -type layer.
【０００７】次に、ｐ型シリコン基板１の受光面側にＳ
ｉ3 Ｎ4熱窒化リンやひ素をドーピングし、ｎ+ 型の半
導体層３を形成する。その後、基板の両側に酸化膜を約
１５０Å形成し、パッシベーション膜４を形成する。ま
た、受光面側のパッシベーション膜４の上には、熱酸化
によりＴｉＯ2 よりなる反射防止膜５が形成される。Next, S is formed on the light receiving surface side of the p-type silicon substrate 1.
i 3 N 4 thermal phosphorus nitride or arsenic is doped to form an n + type semiconductor layer 3. After that, an oxide film is formed on both sides of the substrate to a thickness of about 150 Å to form the passivation film 4. An antireflection film 5 made of TiO 2 is formed on the passivation film 4 on the light receiving surface side by thermal oxidation.
【０００８】その後、受光面電極７および裏面電極６を
Ａｇを主成分とする金属ペーストを印刷し、焼成によ
り、各電極６，７を形成する。Thereafter, the light-receiving surface electrode 7 and the back surface electrode 6 are printed with a metal paste containing Ag as a main component, and baked to form the electrodes 6 and 7.
【０００９】次に、裏面側には、光の高い反射率を有す
る金属材料からなる反射層（たとえば銀の薄膜）９を蒸
着法により形成する。ここに、蒸着法とは、高真空に排
気した釜の中で、金属を高温にして蒸発させ、この蒸気
をあてて金属を薄膜状に形成する方法をいう。Next, a reflective layer (for example, a silver thin film) 9 made of a metal material having a high light reflectance is formed on the back surface side by a vapor deposition method. Here, the vapor deposition method refers to a method in which a metal is evaporated at a high temperature in a kettle evacuated to a high vacuum, and the vapor is applied to form the metal into a thin film.
【００１０】上記製造方法により、裏面側に反射層を有
する光電変換素子が形成され、半導体基板１に入射した
光は、効率よく光起電力効果に起与させることが可能と
なる。By the above manufacturing method, the photoelectric conversion element having the reflective layer on the back surface side is formed, and the light incident on the semiconductor substrate 1 can be efficiently caused to the photovoltaic effect.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、上記光
電変換素子の製造方法においては、以下に述べる問題点
を有している。However, the above-mentioned method for manufacturing a photoelectric conversion element has the following problems.
【００１２】上記において、反射層９を形成する方法と
して蒸着法を用いている。しかし、蒸着法による金属薄
膜の形成には、高真空を作りだす必要がある。さらに、
装置構成も真空排気系、真空室、電子銃、冷却系、制御
系など複雑かつ大掛かりであり、非常に高価なものであ
る。また、作業性の面においても、蒸着という手法の性
質上、半導体基板の蒸着面を蒸着源に向けて並べる必要
があり、膜厚の分布を考慮すれば、１０ｃｍ×１０ｃｍ
の大きさの半導体基板の場合は１回に数枚の処理しかで
きず、非常に生産性が悪くコスト低下のための問題点と
なっている。In the above, the vapor deposition method is used as the method of forming the reflective layer 9. However, it is necessary to create a high vacuum for forming the metal thin film by the vapor deposition method. further,
The device configuration is complicated and large-scale such as a vacuum exhaust system, a vacuum chamber, an electron gun, a cooling system, and a control system, and is very expensive. Also in terms of workability, it is necessary to arrange the vapor deposition surface of the semiconductor substrate toward the vapor deposition source due to the nature of the vapor deposition method. Considering the film thickness distribution, 10 cm × 10 cm
In the case of a semiconductor substrate having a size of, only a few substrates can be processed at a time, which is very poor in productivity and is a problem for cost reduction.
【００１３】この発明は、上記問題点を解決するために
なされたもので、半導体基板の裏面に形成される反射膜
の形成のためのコストを低下させることにより、光電変
換素子のコストを低下させ、従来と同様の機能を有する
光電変換素子の製造方法を提供することを目的とする。The present invention has been made to solve the above problems, and reduces the cost of forming a reflective film formed on the back surface of a semiconductor substrate, thereby reducing the cost of a photoelectric conversion element. It is an object of the present invention to provide a method for manufacturing a photoelectric conversion element having the same function as conventional ones.
【００１４】[0014]
【課題を解決するための手段】この発明に基づいた光電
変換素子の製造方法においては、第１導電型の半導体基
板の受光面側に第２導電型の半導体層を形成する工程
と、この半導体層の受光面上に、受光面電極を形成する
工程と、上記半導体基板の上記半導体層と反対側の面
に、光起電力効果により得られる起電力を上記受光面電
極との間で取出すための裏面電極を形成する工程と、上
記半導体基板の上記半導体層と反対側の面および上記裏
面電極を覆うように無電界めっき法により上記半導体層
および上記半導体基板を透過した光を反射させるための
反射層を形成する工程とを備えている。In a method of manufacturing a photoelectric conversion element according to the present invention, a step of forming a second conductivity type semiconductor layer on a light receiving surface side of a first conductivity type semiconductor substrate, and the step of forming the semiconductor layer Forming a light-receiving surface electrode on the light-receiving surface of the layer, and extracting the electromotive force obtained by the photovoltaic effect between the light-receiving surface electrode and the surface of the semiconductor substrate opposite to the semiconductor layer. A step of forming a back electrode, and for reflecting light transmitted through the semiconductor layer and the semiconductor substrate by electroless plating so as to cover the surface of the semiconductor substrate opposite to the semiconductor layer and the back electrode. And a step of forming a reflective layer.
【００１５】[0015]
【作用】光電変換素子の裏面側に形成される反射膜を無
電界めっき法を用いて形成することにより、生産性の向
上をはかることができる。The productivity can be improved by forming the reflective film formed on the back surface side of the photoelectric conversion element by the electroless plating method.
【００１６】[0016]
【実施例】以下、この発明に基づいた実施例について図
面に基づいて説明する。なお、この実施例において製造
される光電変換素子の構造は、図１を参照して、従来技
術における光電変換素子と同じであるためこの実施例の
特徴である製造方法についてのみ以下言及する。Embodiments of the present invention will be described below with reference to the drawings. Since the structure of the photoelectric conversion element manufactured in this example is the same as that of the photoelectric conversion element in the prior art with reference to FIG. 1, only the manufacturing method which is the feature of this example will be described below.
【００１７】まず、図２を参照して、ｐ型シリコン基板
１の裏面側にＡｌなどをドーピングしてｐ+ 型層からな
るＢＳＦ層を形成する。First, referring to FIG. 2, the back side of p type silicon substrate 1 is doped with Al or the like to form a BSF layer of ap + type layer.
【００１８】次に、ｐ型シリコン基板１の受光面側にリ
ンやひ素をドーピングしｎ+ 型の半導体層を形成する。
その後、図３を参照して、基板の両側にＳｉ3 Ｎ4 熱窒
化膜を約１５０Å形成し、パッシベーション膜４を形成
する。Next, phosphorus or arsenic is doped on the light-receiving surface side of the p-type silicon substrate 1 to form an n + -type semiconductor layer.
Thereafter, referring to FIG. 3, a Si 3 N 4 thermal nitride film is formed on both sides of the substrate to a thickness of about 150 Å to form a passivation film 4.
【００１９】次に、図４を参照して、基板の受光面側に
熱酸化によりＴｉＯ2 よりなる反射防止膜５が形成され
る。その後、図５を参照して、受光面電極７および裏面
電極６をＡｇを主成分とする金属ペーストを印刷し、焼
成により各電極６，７を形成する。Next, referring to FIG. 4, an antireflection film 5 made of TiO 2 is formed on the light receiving surface side of the substrate by thermal oxidation. After that, referring to FIG. 5, a metal paste containing Ag as a main component is printed on light-receiving surface electrode 7 and back surface electrode 6, and each electrode 6, 7 is formed by firing.
【００２０】次に、図６を参照して、基板の表面側にめ
っきの保護膜となるレジスト膜８を全面印刷により形成
する。その後、基板の裏面側を不導体用前処理液にＨＦ
を２〜４ｗｔ％の割合で加えたものを用い、前処理を施
し、無電界めっき液を用いて、約３μｍの銅めっき膜か
らなる反射層９を形成する。Next, referring to FIG. 6, a resist film 8 serving as a protective film for plating is formed on the front surface of the substrate by printing on the entire surface. After that, the back side of the substrate is treated with HF as a pretreatment liquid for non-conductor.
Is added in a proportion of 2 to 4 wt%, pretreatment is performed, and a reflection layer 9 made of a copper plating film of about 3 μm is formed by using an electroless plating solution.
【００２１】次に、図７を参照して、基板を溶剤中にお
いて、超音波洗浄を行ないレジスト膜８を取除くことで
本実施例における光電変換素子が形成される。Next, referring to FIG. 7, the substrate is subjected to ultrasonic cleaning in a solvent to remove the resist film 8 to form the photoelectric conversion element of this embodiment.
【００２２】次に、基板の裏面に設けた反射層が銀薄膜
および銅薄膜の場合の光の波長に対する反射率を図８に
示す。Next, FIG. 8 shows the reflectance with respect to the wavelength of light when the reflection layer provided on the back surface of the substrate is a silver thin film and a copper thin film.
【００２３】図８より、裏面反射に寄与できる８００ｎ
ｍ以上の長波長領域において、蒸着法の代表例である銀
薄膜と、無電界めっきで使用した銅薄膜の反射率は同等
であることがわかる。From FIG. 8, 800n which can contribute to the back surface reflection
It can be seen that in the long wavelength region of m or more, the reflectance of the silver thin film, which is a typical example of the vapor deposition method, is the same as that of the copper thin film used in the electroless plating.
【００２４】また、無電界めっき法を用いることは、銅
薄膜の形成が基板をめっき液に浸漬することによって行
なわれるために大掛かりな装置を不要とし、１回に大量
の処理を可能としている。The use of the electroless plating method does not require a large-scale apparatus because the copper thin film is formed by immersing the substrate in a plating solution, and a large amount of processing can be performed at one time.
【００２５】なお、上記において基板の裏面に形成され
る反射層を銅薄膜としたが、これは、光の反射率および
めっき液の単価から最適として選ばれたものであり、め
っき液単価を問題としなければ、金、銀などにおいても
同様の作用効果が得ることができる。In the above description, the reflection layer formed on the back surface of the substrate is a copper thin film, but this is optimally selected from the light reflectance and the unit price of the plating solution. Otherwise, the same effect can be obtained with gold, silver, etc.
【００２６】[0026]
【発明の効果】この発明の製造方法に基づいた光電変換
素子においては、基板の裏面に形成される反射層を無電
界めっき法を用いて形成することにより、従来の蒸着法
によって形成された反射層と同等の反射率を備え、ま
た、１回に大量枚数の基板の処理が可能となるために、
工程の減少ひいては大幅なコストダウンを可能としてい
る。In the photoelectric conversion element based on the manufacturing method of the present invention, the reflection layer formed on the back surface of the substrate is formed by the electroless plating method so that the reflection layer formed by the conventional vapor deposition method is formed. Since it has the same reflectivity as a layer and can process a large number of substrates at one time,
This enables a reduction in the number of processes and thus a significant cost reduction.
【図１】この発明に基づいた製造方法を用いて形成され
た光電変換素子の構造を示す図である。FIG. 1 is a diagram showing a structure of a photoelectric conversion element formed by using a manufacturing method according to the present invention.
【図２】この発明に基づいた製造方法における光電変換
素子の第１の製造工程を示す図である。FIG. 2 is a diagram showing a first manufacturing process of the photoelectric conversion element in the manufacturing method based on the present invention.
【図３】この発明に基づいた製造方法における光電変換
素子の第２の製造工程を示す図である。FIG. 3 is a diagram showing a second manufacturing process of the photoelectric conversion element in the manufacturing method based on the present invention.
【図４】この発明に基づいた製造方法における光電変換
素子の第３の製造工程を示す図である。FIG. 4 is a diagram showing a third manufacturing step of the photoelectric conversion element in the manufacturing method based on the present invention.
【図５】この発明に基づいた製造方法における光電変換
素子の第４の製造工程を示す図である。FIG. 5 is a diagram showing a fourth manufacturing process of the photoelectric conversion element in the manufacturing method based on the present invention.
【図６】この発明に基づいた製造方法における光電変換
素子の第５の製造工程を示す図である。FIG. 6 is a diagram showing a fifth manufacturing step of the photoelectric conversion element in the manufacturing method based on the present invention.
【図７】この発明に基づいた製造方法における光電変換
素子の最終製造工程を示す図である。FIG. 7 is a diagram showing a final manufacturing process of a photoelectric conversion element in a manufacturing method according to the present invention.
【図８】半導体基板の裏面側に形成される反射膜の、銀
薄膜および銅薄膜における光反射の波長に対する反射率
を示す図である。FIG. 8 is a diagram showing the reflectance of a reflective film formed on the back surface side of a semiconductor substrate with respect to the wavelength of light reflection in a silver thin film and a copper thin film.
１ 半導体基板 ２ ＢＳＦ層 ３ 半導体層 ４ パッシベーション膜 ５ 反射防止膜 ６ 裏面電極 ７ 受光面電極 ９ 反射層 なお図中、同一符号は同一または相当部分を示す。 1 semiconductor substrate 2 BSF layer 3 semiconductor layer 4 passivation film 5 antireflection film 6 back surface electrode 7 light receiving surface electrode 9 reflection layer In the drawings, the same reference numerals indicate the same or corresponding portions.
Claims (1)
２導電型の半導体層を形成する工程と、 この半導体層の受光面上に、受光面電極を形成する工程
と、 前記半導体基板の前記半導体層と反対側の面に、光起電
力効果により得られる起電力を前記受光面電極との間で
取出すための裏面電極を形成する工程と、 前記半導体基板の前記半導体層と反対側の面および裏面
電極を覆うように無電界めっき法により前記半導体層お
よび半導体基板を透過した光を反射させるための反射層
を形成する工程と、 を備えた光電変換素子の製造方法。1. A step of forming a second conductive type semiconductor layer on the light receiving surface side of a first conductive type semiconductor substrate; a step of forming a light receiving surface electrode on the light receiving surface of the semiconductor layer; A step of forming a back surface electrode on the surface of the substrate opposite to the semiconductor layer for extracting an electromotive force obtained by a photovoltaic effect between the light receiving surface electrode and the semiconductor layer of the semiconductor substrate; A step of forming a reflective layer for reflecting light transmitted through the semiconductor layer and the semiconductor substrate by electroless plating so as to cover the side surface and the back surface electrode, and a method for manufacturing a photoelectric conversion element, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3255348A JPH0595127A (en) | 1991-10-02 | 1991-10-02 | Manufacture of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3255348A JPH0595127A (en) | 1991-10-02 | 1991-10-02 | Manufacture of photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0595127A true JPH0595127A (en) | 1993-04-16 |
Family
ID=17277543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3255348A Withdrawn JPH0595127A (en) | 1991-10-02 | 1991-10-02 | Manufacture of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0595127A (en) |
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1991
- 1991-10-02 JP JP3255348A patent/JPH0595127A/en not_active Withdrawn
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