JPH0945945A - Solar cell element and fabrication thereof - Google Patents
Solar cell element and fabrication thereofInfo
- Publication number
- JPH0945945A JPH0945945A JP7192859A JP19285995A JPH0945945A JP H0945945 A JPH0945945 A JP H0945945A JP 7192859 A JP7192859 A JP 7192859A JP 19285995 A JP19285995 A JP 19285995A JP H0945945 A JPH0945945 A JP H0945945A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- back surface
- silicon nitride
- silicon
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 22
- 235000012431 wafers Nutrition 0.000 claims 6
- 230000000694 effects Effects 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池素子および
その製造方法に関し、特にシリコンウェハ内にＰ−Ｎ接
合部を形成した太陽電池素子およびその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell element and a method for manufacturing the same, and more particularly to a solar cell element having a P-N junction formed in a silicon wafer and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来の太陽電池素子の構造を図２に示
す。例えば厚さ０．５ｍｍ程度の単結晶又は多結晶のシ
リコンなどから成るＰ型シリコンウェハ２１の一主面側
に０．２〜０．５μｍの深さにリン（Ｐ）等を拡散させ
たＮ層２２を設け、このＮ層２２の表面に、銀、アルミ
ニウム、ニッケル等から成るグリッド状の表面電極２３
及びこの表面電極２３の間隙に窒化シリコン膜や酸化シ
リコン膜などから成る反射防止膜２４を設けて構成され
ている。またシリコンウェハ２１の他の主面側には、
銀、アルミニウム、ニッケル等から成る裏面電極２６を
設けている。そして表面電極２３及び裏面電極２６上に
は、外部リード線が容易に接続できるように半田層（不
図示）などを設けている。なお、反射防止膜２４はプラ
ズマＣＶＤ法などで形成され、表面電極２３及び裏面電
極２６はスクリーン印刷法などの厚膜手法で形成され
る。2. Description of the Related Art The structure of a conventional solar cell element is shown in FIG. For example, N having phosphorus (P) or the like diffused to a depth of 0.2 to 0.5 μm on one main surface side of the P-type silicon wafer 21 made of single crystal or polycrystalline silicon having a thickness of about 0.5 mm. A layer 22 is provided, and a grid-like surface electrode 23 made of silver, aluminum, nickel or the like is provided on the surface of the N layer 22.
Further, an antireflection film 24 made of a silicon nitride film or a silicon oxide film is provided in the gap between the surface electrodes 23. On the other main surface side of the silicon wafer 21,
A back electrode 26 made of silver, aluminum, nickel or the like is provided. A solder layer (not shown) or the like is provided on the front surface electrode 23 and the back surface electrode 26 so that external lead wires can be easily connected. The antireflection film 24 is formed by a plasma CVD method or the like, and the front surface electrode 23 and the back surface electrode 26 are formed by a thick film method such as a screen printing method.
【０００３】また、シリコンウェハ２１の裏面側にアル
ミニウムなどを高濃度に拡散させたＰ+ 高濃度領域２５
を設け、シリコンウェハ２１裏面側の内部電界によっ
て、少数キャリア（電子）の再結合速度を遅くさせて短
絡電流を向上させ、もって太陽電池の変換効率を高める
ことも提案されている。A P + high concentration region 25 in which aluminum or the like is diffused at a high concentration on the back surface side of the silicon wafer 21.
It is also proposed that the internal electric field on the back surface side of the silicon wafer 21 slows down the recombination rate of minority carriers (electrons) to improve the short-circuit current, thereby increasing the conversion efficiency of the solar cell.
【０００４】このＰ+ 高濃度領域２５は通常はシリコン
ウェハ２１の裏面側全面に形成されるが、この部分での
キャリアの再結合をさらに減少させるために、このＰ+
高濃度領域２５を点在させて設けることも提案されてい
る。Ｐ+ 高濃度領域２５を点在させて設ける方法として
は、シリコンウェハ２１の裏面側にフォトレジストで
微細なパターンを形成し、このフォトレジスト上に真空
蒸着法などでアルミニウム層を形成した後に、このフォ
トレジストを剥離して、このフォトレジストが塗布され
た領域以外のアルミニウムを残すように形成する方法、
アルミニウム層をスクリーン印刷法などでドット状に
印刷・焼成する方法（特開平４−４４２７７号）、シ
リコンウェハ２１の裏面側にフォトレジストのパターン
を形成し、二酸化チタン（ＴｉＯ2 ）あるいは酸化錫
（ＳｎＯ2 ）をプラズマＣＶＤ法で堆積した後にリフト
オフし、その上からアルミニウムペーストを印刷・焼成
する方法（特公平５−７３３５７号）などがある。[0004] For this P + high concentration region 25 but is usually formed over the entire surface on the back side of the silicon wafer 21, which further reduces the carrier recombination at this portion, the P +
It has also been proposed to provide the high concentration regions 25 in a scattered manner. As a method for providing the P + high-concentration regions 25 in a scattered manner, a fine pattern is formed with a photoresist on the back surface side of the silicon wafer 21, and an aluminum layer is formed on the photoresist by a vacuum deposition method or the like, A method of peeling off this photoresist so as to leave aluminum in a region other than the region where this photoresist is applied,
A method of printing and baking the aluminum layer in a dot shape by a screen printing method or the like (JP-A-4-44277), a photoresist pattern is formed on the back surface side of the silicon wafer 21, and titanium dioxide (TiO 2 ) or tin oxide ( SnO 2 ) is deposited by a plasma CVD method, lifted off, and an aluminum paste is printed / fired on the lifted-off method (Japanese Patent Publication No. 5-73357).
【０００５】[0005]
【発明が解決しようとする問題点】ところが上記の方
法では、シリコンウェハ２１の裏面側にフォトレジスト
パターンを形成して、アルミニウムなどを真空蒸着法な
どで形成した後に，剥離することから、製造コストが高
コストになると共に、シリコンウェハ２１裏面側のパシ
ベーション効果が得られないという問題があった。However, in the above method, a photoresist pattern is formed on the back surface side of the silicon wafer 21 and aluminum or the like is formed by a vacuum deposition method or the like, and then peeled off. However, there is a problem that the cost becomes high and the passivation effect on the back surface side of the silicon wafer 21 cannot be obtained.
【０００６】またの方法では、アルミニウムペースト
をスクリーン印刷法で印刷することから、微細な印刷が
不可能であると共に、シリコンウェハ２１裏面側のパシ
ベーション効果が得られないという問題があった。[0006] In the other method, since the aluminum paste is printed by the screen printing method, there is a problem that fine printing is impossible and the passivation effect on the back surface side of the silicon wafer 21 cannot be obtained.
【０００７】さらにの方法では、アルミニウムの拡散
マスクとして二酸化チタンや二酸化錫を形成している
が、この二酸化チタンや二酸化錫は反射防止膜（ＢＳ
Ｒ）としての効果はあるが、パシベーション効果は得ら
れないという問題があった。In the further method, titanium dioxide or tin dioxide is formed as a diffusion mask for aluminum, and the titanium dioxide or tin dioxide is used as an antireflection film (BS).
Although it has the effect as R), there is a problem that the passivation effect cannot be obtained.
【０００８】本発明はこのような従来技術の問題点に鑑
みて発明されたものであり、ＢＳＦ層を微細なパターン
に形成できると共に、シリコンウェハ裏面側のパシベー
ション効果も得られる太陽電池素子およびその製造方法
を提供することを目的とする。The present invention has been invented in view of the above problems of the prior art, and a solar cell element and a solar cell element capable of forming a BSF layer in a fine pattern and also having a passivation effect on the back surface side of a silicon wafer. It is intended to provide a manufacturing method.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に係る太陽電池素子では、Ｐ−Ｎ接合部を
有するシリコンウェハの裏面側にアルミニウムを含有さ
せると共に、このシリコンウェハに表面電極と裏面電極
を設けた太陽電池素子において、前記シリコンウェハの
裏面側に多数の透孔部を有する窒化シリコン膜を設け、
この透孔部に裏面電極を設けた。In order to achieve the above object, in the solar cell element according to claim 1, aluminum is contained in the back surface side of a silicon wafer having a P-N junction, and the silicon wafer is included in the silicon wafer. In a solar cell element provided with a front surface electrode and a back surface electrode, a silicon nitride film having a large number of through holes is provided on the back surface side of the silicon wafer,
A back electrode was provided in this through hole.
【００１０】この請求項１に係る太陽電池素子では、シ
リコンウェハの裏面側に多数の透孔部を有する窒化シリ
コン膜を設けると共に、この透孔部に裏面電極を設けた
ことから、この窒化シリコン膜をアルミニウムペースト
を印刷して拡散させる際のマスクとして使用することが
でき、Ｐ+ 高濃度領域を微細なパターンに形成できると
共に、この窒化シリコン膜によって、シリコンウェハ裏
面側のパシベーション効果も得られる。In the solar cell element according to the present invention, the silicon nitride film having a large number of through holes is provided on the back surface side of the silicon wafer, and the back surface electrode is provided at the through holes. The film can be used as a mask when aluminum paste is printed and diffused, and the P + high-concentration region can be formed into a fine pattern, and the silicon nitride film also provides a passivation effect on the back surface side of the silicon wafer. .
【００１１】また、請求項２に係る太陽電池素子の製造
方法では、Ｐ−Ｎ接合部を有するシリコンウェハの裏面
側にアルミニウムを拡散させた後、このシリコンウェハ
に表面電極と裏面電極を形成する太陽電池素子の製造方
法において、前記シリコンウェハの裏面側にアルミニウ
ムを拡散させる際に、多数の透孔部を有する窒化シリコ
ン膜をマスクとして拡散させる。In the method of manufacturing a solar cell element according to a second aspect of the present invention, aluminum is diffused on the back surface side of a silicon wafer having a PN junction, and then a front surface electrode and a back surface electrode are formed on this silicon wafer. In the method of manufacturing a solar cell element, when aluminum is diffused on the back surface side of the silicon wafer, a silicon nitride film having a large number of through holes is used as a mask for diffusion.
【００１２】この請求項２に係る太陽電池素子の製造方
法では、シリコンウェハの裏面側にアルミニウムを拡散
させる際に、多数の透孔部を有する窒化シリコン膜をマ
スクとして拡散させることから、Ｐ+ 高濃度領域の面積
が減少して、この領域でのキャリアの再結合が減少す
る。またＰ+ 領域を微細なパターンで形成できるので、
拡散長の短い多結晶シリコン基板へ適用した場合、より
効果的である。さらに窒化シリコン膜が裏面パシベーシ
ョン膜として働き、多結晶シリコンのような拡散長の短
いウェハには特性向上の効果が大きい。In the method of manufacturing a solar cell element according to the second aspect, when diffusing aluminum on the back surface side of the silicon wafer, the silicon nitride film having a large number of through holes is used as a mask for diffusing, so that P + The area of the high-concentration region is reduced, and the recombination of carriers in this region is reduced. Moreover, since the P + region can be formed in a fine pattern,
It is more effective when applied to a polycrystalline silicon substrate having a short diffusion length. Further, the silicon nitride film acts as a back surface passivation film, and the effect of improving the characteristics is great for a wafer having a short diffusion length such as polycrystalline silicon.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づき詳細に説明する。図１（ａ）〜（ｇ）は本
発明の太陽電池素子の製造工程を示す図である。まず、
同図（ａ）に示すように、０．２〜１．０ｍｍ程度の厚
みを有するシリコンウェハ１を用意する。このシリコン
ウェハ１は、ＣＺ法、ＦＺ法、ＥＦＧ法、或いは鋳造法
等で形成された単結晶又は多結晶のシリコンをスライス
して形成され、例えばボロン（Ｂ）等のＰ型不純物を含
有する。シリコンウェハ１の表面にＮ層１ａを設け、Ｐ
−Ｎ接合部を形成する。層１ａの深さは２０００Å〜１
μｍ程度である。このＮ層１ａはリンを含む気体例えば
オキシ塩化リン（ＰＯＣｌ3 ）等を用いることにより形
成する。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. 1 (a) to 1 (g) are views showing a manufacturing process of the solar cell element of the present invention. First,
As shown in FIG. 3A, a silicon wafer 1 having a thickness of about 0.2 to 1.0 mm is prepared. The silicon wafer 1 is formed by slicing single crystal or polycrystalline silicon formed by a CZ method, an FZ method, an EFG method, a casting method, or the like, and contains a P-type impurity such as boron (B). . An N layer 1a is provided on the surface of the silicon wafer 1, and P
Form an N junction. The depth of layer 1a is 2000Å ~ 1
It is about μm. The N layer 1a is formed by using a gas containing phosphorus such as phosphorus oxychloride (POCl 3 ).
【００１４】次に、同図（ｂ）に示すように、一主面側
のＮ層１ａのみを残してＮ層１ａの他の部分を除去す
る。すなわち、一主面側のみにエッチングのレジスト膜
を塗布し、フッ酸（ＨＦ）と硝酸（ＨＮＯ3 ）との混合
液に浸漬して、一主面側以外のＮ層１ａを除去した後に
レジスト膜を除去し、シリコンウェハ１を純水で洗浄す
る。Next, as shown in FIG. 3B, the N layer 1a on the one main surface side is left and the other portion of the N layer 1a is removed. That is, an etching resist film is applied only on one main surface side, and is immersed in a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO 3 ) to remove the N layer 1a other than the one main surface side, and then the resist is applied. The film is removed, and the silicon wafer 1 is washed with pure water.
【００１５】次に、同図（ｃ）に示すように、シリコン
ウェハ１の一主面側に反射防止膜２を形成すると共に、
他の主面側に窒化シリコン膜３を形成する。この反射防
止膜２はシリコンウェハ１に入射される光を効率よく吸
収するための膜であり、その厚みが５００〜１０００
Å、屈折率が１．９０〜２．３０程度になるように形成
される。例えばシランとアンモニアとの混合ガスをプラ
ズマ化して析出させた窒化シリコン膜等で形成される。
具体的には、プラズマＣＶＤ装置内でシリコンウェハ１
を１５０〜４００℃にまで加熱し、ガス圧を０．２〜
２．０Ｔｏｒｒに維持しながら、高周波電圧を印加す
る。この反射防止膜２の材料としては窒化シリコン膜の
他に、一酸化シリコン（ＳｉＯ）、二酸化シリコン（Ｓ
ｉＯ2 ）、二酸化チタン（ＴｉＯ2 ）などがある。ま
た、シリコンウェハ１の裏面側の窒化シリコン膜３は、
プラズマＣＶＤ法などで厚み５００〜１０００Å程度に
形成される。Next, as shown in FIG. 1C, an antireflection film 2 is formed on one main surface side of the silicon wafer 1, and at the same time,
A silicon nitride film 3 is formed on the other main surface side. The antireflection film 2 is a film for efficiently absorbing light incident on the silicon wafer 1 and has a thickness of 500 to 1000.
Å, formed to have a refractive index of about 1.90 to 2.30. For example, it is formed of a silicon nitride film or the like deposited by converting a mixed gas of silane and ammonia into plasma.
Specifically, the silicon wafer 1 in the plasma CVD apparatus
Is heated to 150 to 400 ° C., and the gas pressure is 0.2 to
A high frequency voltage is applied while maintaining at 2.0 Torr. As the material of the antireflection film 2, in addition to the silicon nitride film, silicon monoxide (SiO), silicon dioxide (S
iO 2 ), titanium dioxide (TiO 2 ) and the like. Further, the silicon nitride film 3 on the back surface side of the silicon wafer 1 is
It is formed to a thickness of about 500 to 1000Å by plasma CVD method or the like.
【００１６】次に、同図（ｄ）に示すように、窒化シリ
コン膜３にフォトリソグラフィによって透孔部３ａを形
成する。この透孔部３ａは内径が数１０μｍ程度にな
り、ピッチが１００μｍ程度になるように形成する。こ
の透孔部３ａの形状は円形でも四角形でもいずれでもよ
い。Next, as shown in FIG. 3D, a through hole portion 3a is formed in the silicon nitride film 3 by photolithography. The through holes 3a are formed so that the inner diameter is about several tens of μm and the pitch is about 100 μm. The shape of the through hole 3a may be circular or quadrangular.
【００１７】次に、同図（ｅ）に示すように、窒化シリ
コン膜３上からシリコンウェハ１の他の主面側の全面
に、アルミニウムペースト４を塗布して焼き付けること
により、シリコンウェハ１の窒化シリコン膜３の透孔部
３ａにＰ+ 領域１ｂを形成する。Next, as shown in FIG. 1E, an aluminum paste 4 is applied and baked on the entire surface of the silicon nitride film 3 on the other main surface side of the silicon wafer 1 to form the silicon wafer 1. A P + region 1b is formed in the through hole portion 3a of the silicon nitride film 3.
【００１８】次に、同図（ｆ）に示すように、シリコン
ウェハ１の他の主面側に塗布したアルミニウムペースト
４をエッチング除去した後、シリコンウェハ１の表面側
に形成した反射防止膜２を表面電極５の形状に応じて除
去する。すなわち、表面電極５のパターンと逆パターン
を形づくるように反射防止膜２を除去する。Next, as shown in FIG. 1F, after the aluminum paste 4 applied to the other main surface side of the silicon wafer 1 is removed by etching, the antireflection film 2 formed on the front surface side of the silicon wafer 1 is removed. Are removed according to the shape of the surface electrode 5. That is, the antireflection film 2 is removed so as to form a pattern opposite to the pattern of the surface electrode 5.
【００１９】次に、同図（ｇ）に示すように、シリコン
ウェハ１の一主面側の反射防止膜２及び他の主面側の窒
化シリコン膜３の除去部分に表面電極５及び裏面電極６
を形成する。表面電極５及び裏面電極６は、銀粉末を主
成分とするペーストをシリコンウェハ１の表面ｇび裏面
に厚膜手法で塗布して加熱焼成することにより形成す
る。Next, as shown in FIG. 1G, the front surface electrode 5 and the back surface electrode are formed on the removed portion of the antireflection film 2 on the one main surface side of the silicon wafer 1 and the silicon nitride film 3 on the other main surface side. 6
To form The front surface electrode 5 and the back surface electrode 6 are formed by applying a paste containing silver powder as a main component to the front surface g and the back surface of the silicon wafer 1 by a thick film method and baking the paste.
【００２０】裏面電極６は、窒化シリコン膜３の透孔部
３ａにも充填され、電極として機能することになる。The back surface electrode 6 is also filled in the through hole portion 3a of the silicon nitride film 3 and functions as an electrode.
【００２１】この表面電極２及び裏面電極３上には、必
要に応じて半田層（不図示）などが形成される。なお、
表面電極５及び裏面電極６は、メッキ法や真空蒸着法を
用いて形成してもよい。A solder layer (not shown) or the like is formed on the front surface electrode 2 and the back surface electrode 3 if necessary. In addition,
The front surface electrode 5 and the back surface electrode 6 may be formed by using a plating method or a vacuum evaporation method.
【００２２】[0022]
【発明の効果】以上のように、請求項１に係る太陽電池
素子では、シリコンウェハの裏面側に多数の透孔部を有
する窒化シリコン膜を設けると共に、この透孔部に裏面
電極を設けたことから、この窒化シリコン膜をアルミニ
ウムペーストを印刷して拡散させる際のマスクとして使
用することができ、Ｐ+ 高濃度領域を微細なパターンに
形成できると共に、この窒化シリコン膜によって、シリ
コンウェハ裏面側のパシベーション効果も得られる。As described above, in the solar cell element according to claim 1, the silicon nitride film having a large number of through holes is provided on the back surface side of the silicon wafer, and the back surface electrode is provided at the through holes. Therefore, this silicon nitride film can be used as a mask when aluminum paste is printed and diffused, and a P + high concentration region can be formed in a fine pattern. The passivation effect of is also obtained.
【００２３】また請求項２に係る太陽電池素子の製造方
法では、シリコンウェハの裏面側にアルミニウムを拡散
させる際に、多数の透孔部を有する窒化シリコン膜をマ
スクとして拡散させることから、Ｐ+ 高濃度領域の面積
が減少して、この領域でのキャリアの再結合が減少す
る。またＰ+ 領域を微細なパターンで形成できるので、
拡散長の短い多結晶シリコン基板へ適用した場合、より
効果的である。さらに窒化シリコン膜が裏面パシベーシ
ョン膜として働き、多結晶シリコンのような拡散長の短
いウェハには特性向上の効果が大きい。[0023] In the manufacturing method of the solar cell element according to claim 2, when diffusing aluminum on the back surface side of the silicon wafer, since the diffusing silicon nitride film having a large number of through holes section as a mask, P + The area of the high-concentration region is reduced, and the recombination of carriers in this region is reduced. Moreover, since the P + region can be formed in a fine pattern,
It is more effective when applied to a polycrystalline silicon substrate having a short diffusion length. Further, the silicon nitride film acts as a back surface passivation film, and the effect of improving the characteristics is great for a wafer having a short diffusion length such as polycrystalline silicon.
【図１】本願の請求項１に係る太陽電池素子および請求
項２に係る太陽電池素子の製造方法の一実施例を示す図
である。FIG. 1 is a diagram showing an example of a method for manufacturing a solar cell element according to claim 1 and a solar cell element according to claim 2 of the present application.
【図２】従来の太陽電池素子を示す図である。FIG. 2 is a diagram showing a conventional solar cell element.
１・・・シリコンウェハ、１ａ・・・Ｎ層、１ｂ・・・
Ｐ+ 高濃度不純物領域、２・・・反射防止膜、３・・・
窒化シリコン膜、４・・・表面電極、５・・・裏面電極1 ... Silicon wafer, 1a ... N layer, 1b ...
P + high-concentration impurity region, 2 ... Antireflection film, 3 ...
Silicon nitride film, 4 ... Front electrode, 5 ... Back electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 白沢 勝彦 滋賀県八日市市蛇溝町長谷野1166番地の６ 京セラ株式会社滋賀工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsuhiko Shirasawa 6 16-1166 Haseno, Jamizo Town, Yokaichi City, Shiga Prefecture Kyocera Corporation Shiga Factory
Claims (2)
裏面側にアルミニウムを拡散させると共に、このシリコ
ンウェハに表面電極と裏面電極を設けた太陽電池素子に
おいて、前記シリコンウェハの裏面側に多数の透孔部を
有する窒化シリコン膜を設け、この透孔部に裏面電極を
設けたことを特徴とする太陽電池素子。1. A solar cell element in which aluminum is diffused on the back surface side of a silicon wafer having a PN junction and a front surface electrode and a back surface electrode are provided on the silicon wafer, and a large number of silicon wafers are formed on the back surface side of the silicon wafer. A solar cell element comprising a silicon nitride film having a through hole and a back electrode provided in the through hole.
裏面側にアルミニウムを拡散させた後、このシリコンウ
ェハに表面電極と裏面電極を形成する太陽電池素子の製
造方法において、前記シリコンウェハの裏面側にアルミ
ニウムを拡散させる際に、多数の透孔部を有する窒化シ
リコン膜をマスクとして拡散させることを特徴とする太
陽電池素子の製造方法。2. A method for manufacturing a solar cell element, which comprises diffusing aluminum on the back surface side of a silicon wafer having a P-N junction and then forming a front surface electrode and a back surface electrode on the silicon wafer. A method of manufacturing a solar cell element, which comprises diffusing aluminum to the side by using a silicon nitride film having a large number of through holes as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7192859A JPH0945945A (en) | 1995-07-28 | 1995-07-28 | Solar cell element and fabrication thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7192859A JPH0945945A (en) | 1995-07-28 | 1995-07-28 | Solar cell element and fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0945945A true JPH0945945A (en) | 1997-02-14 |
Family
ID=16298164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7192859A Pending JPH0945945A (en) | 1995-07-28 | 1995-07-28 | Solar cell element and fabrication thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0945945A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
| JP2008172279A (en) * | 2008-04-03 | 2008-07-24 | Shin Etsu Handotai Co Ltd | Solar cell |
| WO2010064303A1 (en) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| EP2615613A2 (en) | 2012-01-16 | 2013-07-17 | E. I. du Pont de Nemours and Company | A solar cell back side electrode |
-
1995
- 1995-07-28 JP JP7192859A patent/JPH0945945A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
| JP2008172279A (en) * | 2008-04-03 | 2008-07-24 | Shin Etsu Handotai Co Ltd | Solar cell |
| WO2010064303A1 (en) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| US8377734B2 (en) | 2008-12-02 | 2013-02-19 | Mitsubishi Electric Corporation | Method for manufacturing solar battery cell |
| JP5197760B2 (en) * | 2008-12-02 | 2013-05-15 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| EP2615613A2 (en) | 2012-01-16 | 2013-07-17 | E. I. du Pont de Nemours and Company | A solar cell back side electrode |
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