JPS57141956A - Optical conductive element - Google Patents

Optical conductive element

Info

Publication number
JPS57141956A
JPS57141956A JP56027753A JP2775381A JPS57141956A JP S57141956 A JPS57141956 A JP S57141956A JP 56027753 A JP56027753 A JP 56027753A JP 2775381 A JP2775381 A JP 2775381A JP S57141956 A JPS57141956 A JP S57141956A
Authority
JP
Japan
Prior art keywords
evaporated
electrode
layer
thereabouts
conductive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56027753A
Other languages
Japanese (ja)
Other versions
JPS6322467B2 (en
Inventor
Hisashi Nakatsui
Yoshiki Hazemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56027753A priority Critical patent/JPS57141956A/en
Priority to US06/350,727 priority patent/US4430666A/en
Publication of JPS57141956A publication Critical patent/JPS57141956A/en
Publication of JPS6322467B2 publication Critical patent/JPS6322467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form the filtering mechanism and the photosensitive sensor of the subject element in one body by a method wherein an optical conductive element of amorphous Si is continuously provided on the plurality of picture element electrodes on a supporting member, and a coloring layer and an opposed electrode is successively provided facing the picture element electrodes. CONSTITUTION:After an amorphous Si layer 3 has been evaporated on the glass plate 2 whereon an Al electrode 5' was evaporated, a lead-phthalocyanine green film is evaporated to the thickness of 0.4mum or thereabouts on the prescribed position in the room temperature. Subsequently, a copper-phthalocyanine blue film and a red film of rhodamine 6G are evaporated to the thickness of 0.8mum or thereabouts on the prescribed position respectively. Lastly, the array form coloring layer 4, whereon an In2O3 electrode 5 will be evaporated, is simultaneously sputter-etched together with the electrode 5, the length of a side of the layer 4 is made at 20mum or less, and the interval between electrodes is formed at 3-20mum or thereabouts. Besides, a high molecular resin layer 6 is provided for protection and ultraviolet-ray shielding. According to this constitution, the man-hours and complicated procedures heretofore required to obtain a superpositional accuracy can be reduced, and a highly sensitive optical conductive element can be obtained easily in the prescribed wavelength region.
JP56027753A 1981-02-27 1981-02-27 Optical conductive element Granted JPS57141956A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56027753A JPS57141956A (en) 1981-02-27 1981-02-27 Optical conductive element
US06/350,727 US4430666A (en) 1981-02-27 1982-02-22 Photoelectric converting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56027753A JPS57141956A (en) 1981-02-27 1981-02-27 Optical conductive element

Publications (2)

Publication Number Publication Date
JPS57141956A true JPS57141956A (en) 1982-09-02
JPS6322467B2 JPS6322467B2 (en) 1988-05-12

Family

ID=12229773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56027753A Granted JPS57141956A (en) 1981-02-27 1981-02-27 Optical conductive element

Country Status (1)

Country Link
JP (1) JPS57141956A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59166454U (en) * 1983-04-20 1984-11-08 三洋電機株式会社 Semiconductor photodetector
JPH01190170A (en) * 1988-01-26 1989-07-31 Canon Inc Color picture reader

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59166454U (en) * 1983-04-20 1984-11-08 三洋電機株式会社 Semiconductor photodetector
JPH01190170A (en) * 1988-01-26 1989-07-31 Canon Inc Color picture reader

Also Published As

Publication number Publication date
JPS6322467B2 (en) 1988-05-12

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