JPS5879790A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS5879790A JPS5879790A JP17804781A JP17804781A JPS5879790A JP S5879790 A JPS5879790 A JP S5879790A JP 17804781 A JP17804781 A JP 17804781A JP 17804781 A JP17804781 A JP 17804781A JP S5879790 A JPS5879790 A JP S5879790A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current
- transistor
- active layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 230000000903 blocking effect Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 102100037651 AP-2 complex subunit sigma Human genes 0.000 abstract 2
- 101000806914 Homo sapiens AP-2 complex subunit sigma Proteins 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 130
- 238000005253 cladding Methods 0.000 description 15
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004781 supercooling Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- WFWLQNSHRPWKFK-UHFFFAOYSA-N Tegafur Chemical compound O=C1NC(=O)C(F)=CN1C1OCCC1 WFWLQNSHRPWKFK-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17804781A JPS5879790A (ja) | 1981-11-06 | 1981-11-06 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17804781A JPS5879790A (ja) | 1981-11-06 | 1981-11-06 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5879790A true JPS5879790A (ja) | 1983-05-13 |
| JPS6320397B2 JPS6320397B2 (enrdf_load_stackoverflow) | 1988-04-27 |
Family
ID=16041661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17804781A Granted JPS5879790A (ja) | 1981-11-06 | 1981-11-06 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5879790A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013214648A (ja) * | 2012-04-03 | 2013-10-17 | Sumitomo Electric Device Innovations Inc | 光半導体素子 |
-
1981
- 1981-11-06 JP JP17804781A patent/JPS5879790A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013214648A (ja) * | 2012-04-03 | 2013-10-17 | Sumitomo Electric Device Innovations Inc | 光半導体素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320397B2 (enrdf_load_stackoverflow) | 1988-04-27 |
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