JPS6243357B2 - - Google Patents
Info
- Publication number
- JPS6243357B2 JPS6243357B2 JP12905681A JP12905681A JPS6243357B2 JP S6243357 B2 JPS6243357 B2 JP S6243357B2 JP 12905681 A JP12905681 A JP 12905681A JP 12905681 A JP12905681 A JP 12905681A JP S6243357 B2 JPS6243357 B2 JP S6243357B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current
- conductivity type
- ingaasp
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000005253 cladding Methods 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12905681A JPS5831592A (ja) | 1981-08-18 | 1981-08-18 | 埋め込み構造半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12905681A JPS5831592A (ja) | 1981-08-18 | 1981-08-18 | 埋め込み構造半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831592A JPS5831592A (ja) | 1983-02-24 |
| JPS6243357B2 true JPS6243357B2 (enrdf_load_stackoverflow) | 1987-09-12 |
Family
ID=14999991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12905681A Granted JPS5831592A (ja) | 1981-08-18 | 1981-08-18 | 埋め込み構造半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831592A (enrdf_load_stackoverflow) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60126885A (ja) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
| JPH0827619B2 (ja) * | 1985-02-07 | 1996-03-21 | 富士ゼロックス株式会社 | 文字処理方法およびその装置 |
| JPH0766994B2 (ja) * | 1985-02-19 | 1995-07-19 | シャープ株式会社 | 半導体レーザ素子 |
| JPS61204994A (ja) * | 1985-03-08 | 1986-09-11 | Fujitsu Ltd | 半導体発光装置 |
| JPH0821751B2 (ja) * | 1986-02-28 | 1996-03-04 | 株式会社日立製作所 | 半導体装置 |
| JPS6260285A (ja) * | 1985-09-10 | 1987-03-16 | Sharp Corp | 半導体レ−ザ素子 |
| JPS6276583A (ja) * | 1985-09-12 | 1987-04-08 | Agency Of Ind Science & Technol | 半導体レ−ザ |
| JPS63221045A (ja) * | 1987-03-10 | 1988-09-14 | Matsushita Electric Ind Co Ltd | 千鳥ヘツド用デ−タ生成回路 |
| JP3241002B2 (ja) | 1998-09-02 | 2001-12-25 | 日本電気株式会社 | 半導体レーザの製造方法 |
| JP4541469B2 (ja) * | 1999-10-07 | 2010-09-08 | 富士通株式会社 | 光半導体装置及びその製造方法 |
-
1981
- 1981-08-18 JP JP12905681A patent/JPS5831592A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5831592A (ja) | 1983-02-24 |
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