JPS5879773A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS5879773A
JPS5879773A JP56178759A JP17875981A JPS5879773A JP S5879773 A JPS5879773 A JP S5879773A JP 56178759 A JP56178759 A JP 56178759A JP 17875981 A JP17875981 A JP 17875981A JP S5879773 A JPS5879773 A JP S5879773A
Authority
JP
Japan
Prior art keywords
region
layer
substrate
active layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56178759A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236400B2 (enrdf_load_stackoverflow
Inventor
Yasutaka Hirachi
康剛 平地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56178759A priority Critical patent/JPS5879773A/ja
Publication of JPS5879773A publication Critical patent/JPS5879773A/ja
Publication of JPS6236400B2 publication Critical patent/JPS6236400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H10D64/2565—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies wherein the source or drain regions are on a top side of the semiconductor bodies and the recessed source or drain electrodes are on a bottom side of the semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56178759A 1981-11-06 1981-11-06 電界効果トランジスタ Granted JPS5879773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56178759A JPS5879773A (ja) 1981-11-06 1981-11-06 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56178759A JPS5879773A (ja) 1981-11-06 1981-11-06 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5879773A true JPS5879773A (ja) 1983-05-13
JPS6236400B2 JPS6236400B2 (enrdf_load_stackoverflow) 1987-08-06

Family

ID=16054099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56178759A Granted JPS5879773A (ja) 1981-11-06 1981-11-06 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5879773A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161651A (ja) * 1984-02-02 1985-08-23 Mitsubishi Electric Corp 半導体装置の製造方法
JPS629636A (ja) * 1985-07-08 1987-01-17 Hitachi Ltd 半導体集積回路基板内スル−ホ−ルの形成方法
US5236854A (en) * 1989-12-11 1993-08-17 Yukio Higaki Compound semiconductor device and method for fabrication thereof
JPH06232180A (ja) * 1993-02-05 1994-08-19 Nec Corp 半導体装置
JP2004530289A (ja) * 2001-02-23 2004-09-30 ニトロネックス・コーポレーション バックサイドビアを含む窒化ガリウム材料デバイスおよび方法
WO2008096521A1 (ja) * 2007-02-07 2008-08-14 Nec Corporation 半導体装置
JP5383652B2 (ja) * 2008-03-04 2014-01-08 ルネサスエレクトロニクス株式会社 電界効果トランジスタ及びその製造方法
US10700023B2 (en) 2016-05-18 2020-06-30 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US11367674B2 (en) 2016-08-10 2022-06-21 Macom Technology Solutions Holdings, Inc. High power transistors

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161651A (ja) * 1984-02-02 1985-08-23 Mitsubishi Electric Corp 半導体装置の製造方法
JPS629636A (ja) * 1985-07-08 1987-01-17 Hitachi Ltd 半導体集積回路基板内スル−ホ−ルの形成方法
US5236854A (en) * 1989-12-11 1993-08-17 Yukio Higaki Compound semiconductor device and method for fabrication thereof
JPH06232180A (ja) * 1993-02-05 1994-08-19 Nec Corp 半導体装置
JP2004530289A (ja) * 2001-02-23 2004-09-30 ニトロネックス・コーポレーション バックサイドビアを含む窒化ガリウム材料デバイスおよび方法
JP4792558B2 (ja) * 2001-02-23 2011-10-12 インターナショナル・レクティファイアー・コーポレーション バックサイドビアを含む窒化ガリウム材料デバイスおよび方法
WO2008096521A1 (ja) * 2007-02-07 2008-08-14 Nec Corporation 半導体装置
JP5386987B2 (ja) * 2007-02-07 2014-01-15 日本電気株式会社 半導体装置
JP5383652B2 (ja) * 2008-03-04 2014-01-08 ルネサスエレクトロニクス株式会社 電界効果トランジスタ及びその製造方法
US10700023B2 (en) 2016-05-18 2020-06-30 Macom Technology Solutions Holdings, Inc. High-power amplifier package
US11367674B2 (en) 2016-08-10 2022-06-21 Macom Technology Solutions Holdings, Inc. High power transistors
US11862536B2 (en) 2016-08-10 2024-01-02 Macom Technology Solutions Holdings, Inc. High power transistors

Also Published As

Publication number Publication date
JPS6236400B2 (enrdf_load_stackoverflow) 1987-08-06

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