JPS6236400B2 - - Google Patents
Info
- Publication number
- JPS6236400B2 JPS6236400B2 JP56178759A JP17875981A JPS6236400B2 JP S6236400 B2 JPS6236400 B2 JP S6236400B2 JP 56178759 A JP56178759 A JP 56178759A JP 17875981 A JP17875981 A JP 17875981A JP S6236400 B2 JPS6236400 B2 JP S6236400B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- region
- electrode
- gate electrode
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
- H10D64/2565—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies wherein the source or drain regions are on a top side of the semiconductor bodies and the recessed source or drain electrodes are on a bottom side of the semiconductor bodies
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178759A JPS5879773A (ja) | 1981-11-06 | 1981-11-06 | 電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178759A JPS5879773A (ja) | 1981-11-06 | 1981-11-06 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5879773A JPS5879773A (ja) | 1983-05-13 |
| JPS6236400B2 true JPS6236400B2 (enrdf_load_stackoverflow) | 1987-08-06 |
Family
ID=16054099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56178759A Granted JPS5879773A (ja) | 1981-11-06 | 1981-11-06 | 電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5879773A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60161651A (ja) * | 1984-02-02 | 1985-08-23 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0797572B2 (ja) * | 1985-07-08 | 1995-10-18 | 株式会社日立製作所 | 半導体集積回路基板内スル−ホ−ルの形成方法 |
| US5236854A (en) * | 1989-12-11 | 1993-08-17 | Yukio Higaki | Compound semiconductor device and method for fabrication thereof |
| JPH06232180A (ja) * | 1993-02-05 | 1994-08-19 | Nec Corp | 半導体装置 |
| US6611002B2 (en) * | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
| JP5386987B2 (ja) * | 2007-02-07 | 2014-01-15 | 日本電気株式会社 | 半導体装置 |
| JP5383652B2 (ja) * | 2008-03-04 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | 電界効果トランジスタ及びその製造方法 |
| US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
| US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
-
1981
- 1981-11-06 JP JP56178759A patent/JPS5879773A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5879773A (ja) | 1983-05-13 |
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