JPS5870500A - 半導体記憶回路 - Google Patents
半導体記憶回路Info
- Publication number
- JPS5870500A JPS5870500A JP56169251A JP16925181A JPS5870500A JP S5870500 A JPS5870500 A JP S5870500A JP 56169251 A JP56169251 A JP 56169251A JP 16925181 A JP16925181 A JP 16925181A JP S5870500 A JPS5870500 A JP S5870500A
- Authority
- JP
- Japan
- Prior art keywords
- circuit section
- read
- data
- row
- error correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000011159 matrix material Substances 0.000 claims abstract description 22
- 230000008929 regeneration Effects 0.000 claims description 3
- 238000011069 regeneration method Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56169251A JPS5870500A (ja) | 1981-10-21 | 1981-10-21 | 半導体記憶回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56169251A JPS5870500A (ja) | 1981-10-21 | 1981-10-21 | 半導体記憶回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5870500A true JPS5870500A (ja) | 1983-04-26 |
JPS6226120B2 JPS6226120B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-06 |
Family
ID=15883042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56169251A Granted JPS5870500A (ja) | 1981-10-21 | 1981-10-21 | 半導体記憶回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5870500A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01128298A (ja) * | 1987-11-12 | 1989-05-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH02257498A (ja) * | 1988-12-27 | 1990-10-18 | Nec Corp | 集積回路 |
JPH07169297A (ja) * | 1994-11-18 | 1995-07-04 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1981
- 1981-10-21 JP JP56169251A patent/JPS5870500A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01128298A (ja) * | 1987-11-12 | 1989-05-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH02257498A (ja) * | 1988-12-27 | 1990-10-18 | Nec Corp | 集積回路 |
JPH07169297A (ja) * | 1994-11-18 | 1995-07-04 | Mitsubishi Electric Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6226120B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4112502A (en) | Conditional bypass of error correction for dual memory access time selection | |
US20060112321A1 (en) | Transparent error correcting memory that supports partial-word write | |
JP2821278B2 (ja) | 半導体集積回路 | |
JP2669303B2 (ja) | ビットエラー訂正機能付き半導体メモリ | |
JPS58220299A (ja) | メモリ・システム | |
JPS6284498A (ja) | 半導体記憶装置 | |
JPS5870500A (ja) | 半導体記憶回路 | |
JPH1097471A (ja) | メモリデータのエラー訂正方法、及びエラー訂正方式 | |
US5864567A (en) | Data memory apparatus | |
JPH0440697A (ja) | 半導体記憶装置 | |
JPS6129024B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH01273154A (ja) | Ecc回路付記憶装置 | |
JP2518614B2 (ja) | 半導体不揮発性記憶装置とその動作方法 | |
US12253912B2 (en) | Memory including error correction circuit and operating method thereof | |
JPH0756640B2 (ja) | 記憶装置 | |
KR100328818B1 (ko) | 플래시 메모리의 데이타 저장방법 | |
JPS5963015A (ja) | 回転体磁気記憶装置 | |
JPH01133299A (ja) | 半導体記憶装置 | |
SU1088073A2 (ru) | Запоминающее устройство с обнаружением ошибок | |
JP2627491B2 (ja) | 半導体記憶装置 | |
SU1483494A2 (ru) | Запоминающее устройство с обнаружением ошибок | |
JPS63181197A (ja) | スタチツク型半導体メモリ装置及びその駆動方法 | |
JPS6161418B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS63170756A (ja) | 主記憶イニシヤライズ方式 | |
JPS61120392A (ja) | 記憶回路 |