JPS584816B2 - 半導体素子とその製法 - Google Patents
半導体素子とその製法Info
- Publication number
- JPS584816B2 JPS584816B2 JP51092407A JP9240776A JPS584816B2 JP S584816 B2 JPS584816 B2 JP S584816B2 JP 51092407 A JP51092407 A JP 51092407A JP 9240776 A JP9240776 A JP 9240776A JP S584816 B2 JPS584816 B2 JP S584816B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass
- protective coating
- silicon
- coating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W74/476—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H10W74/01—
-
- H10W74/137—
-
- H10W74/147—
-
- H10W74/43—
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60183875A | 1975-08-04 | 1975-08-04 | |
| US05/601,839 US4017340A (en) | 1975-08-04 | 1975-08-04 | Semiconductor element having a polymeric protective coating and glass coating overlay |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5228266A JPS5228266A (en) | 1977-03-03 |
| JPS584816B2 true JPS584816B2 (ja) | 1983-01-27 |
Family
ID=27083963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51092407A Expired JPS584816B2 (ja) | 1975-08-04 | 1976-08-04 | 半導体素子とその製法 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS584816B2 (show.php) |
| DE (1) | DE2634568C2 (show.php) |
| FR (1) | FR2320634A1 (show.php) |
| GB (1) | GB1553243A (show.php) |
| NL (1) | NL185044C (show.php) |
| SE (1) | SE429699B (show.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997012403A1 (fr) * | 1995-09-27 | 1997-04-03 | Hitachi, Ltd. | Diode |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE418433B (sv) * | 1975-12-11 | 1981-05-25 | Gen Electric | Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet |
| GB1563421A (en) * | 1975-12-18 | 1980-03-26 | Gen Electric | Polyimide-siloxane copolymer protective coating for semiconductor devices |
| JPS5978954A (ja) * | 1982-10-22 | 1984-05-08 | Nitto Electric Ind Co Ltd | 光学ガラスフアイバ用被覆材料 |
| JPH0693451B2 (ja) * | 1984-03-31 | 1994-11-16 | 株式会社東芝 | 半導体装置及びその製造方法 |
| EP0347518A1 (de) * | 1988-03-28 | 1989-12-27 | Asea Brown Boveri Ag | Passivierung eines Halbleiterbauelementes |
| FR2797996B1 (fr) * | 1999-08-25 | 2003-10-03 | Gemplus Card Int | Procede de protection de puces de circuit integre par depot de couche mince isolante |
| FR2797995B1 (fr) * | 1999-08-25 | 2002-03-22 | Gemplus Card Int | Procede de protection de puces de circuit integre par depot de couche mince isolante |
| DE102007033288A1 (de) | 2007-07-17 | 2009-01-22 | Siemens Ag | Elektronisches Bauelement und Vorrichtung mit hoher Isolationsfestigkeit sowie Verfahren zu deren Herstellung |
| EP3113219B1 (de) * | 2015-06-30 | 2020-03-11 | SEMIKRON Elektronik GmbH & Co. KG | Halbleiterbauelement und verfahren zu dessen herstellung |
| JP6704359B2 (ja) * | 2017-01-10 | 2020-06-03 | 三菱電機株式会社 | 電力用半導体装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3034079A (en) * | 1959-05-11 | 1962-05-08 | Microwave Ass | Hermetically sealed semiconductors |
| US3338859A (en) * | 1966-06-30 | 1967-08-29 | Dow Corning | Silicone polyimides |
| US3481781A (en) * | 1967-03-17 | 1969-12-02 | Rca Corp | Silicate glass coating of semiconductor devices |
| US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
| US3619733A (en) * | 1969-08-18 | 1971-11-09 | Rca Corp | Semiconductor device with multilevel metalization and method of making the same |
| US3597269A (en) * | 1969-09-30 | 1971-08-03 | Westinghouse Electric Corp | Surfce stabilization of semiconductor power devices and article |
| US3643136A (en) * | 1970-05-22 | 1972-02-15 | Gen Electric | Glass passivated double beveled semiconductor device with partially spaced preform |
| IE35063B1 (en) * | 1970-05-22 | 1975-10-29 | Gen Electric | Semiconductor device with polymeric passivant bonded preform |
| IE35247B1 (en) * | 1970-06-08 | 1975-12-24 | Gen Electric | Improvements in ceramic passivated semi-conductor device and process for its manufacture |
| JPS4723980U (show.php) * | 1971-03-19 | 1972-11-17 | ||
| US3740305A (en) * | 1971-10-01 | 1973-06-19 | Gen Electric | Composite materials bonded with siloxane containing polyimides |
| JPS5144071B2 (show.php) * | 1972-06-14 | 1976-11-26 |
-
1976
- 1976-07-21 GB GB30336/76A patent/GB1553243A/en not_active Expired
- 1976-07-30 NL NLAANVRAGE7608544,A patent/NL185044C/xx not_active IP Right Cessation
- 1976-07-30 FR FR7623319A patent/FR2320634A1/fr active Granted
- 1976-07-31 DE DE2634568A patent/DE2634568C2/de not_active Expired
- 1976-08-03 SE SE7608727A patent/SE429699B/xx not_active IP Right Cessation
- 1976-08-04 JP JP51092407A patent/JPS584816B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997012403A1 (fr) * | 1995-09-27 | 1997-04-03 | Hitachi, Ltd. | Diode |
Also Published As
| Publication number | Publication date |
|---|---|
| NL185044B (nl) | 1989-08-01 |
| FR2320634B1 (show.php) | 1983-01-07 |
| SE7608727L (sv) | 1977-02-05 |
| SE429699B (sv) | 1983-09-19 |
| DE2634568C2 (de) | 1985-06-20 |
| NL185044C (nl) | 1990-01-02 |
| JPS5228266A (en) | 1977-03-03 |
| NL7608544A (nl) | 1977-02-08 |
| FR2320634A1 (fr) | 1977-03-04 |
| GB1553243A (en) | 1979-09-26 |
| DE2634568A1 (de) | 1977-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4017340A (en) | Semiconductor element having a polymeric protective coating and glass coating overlay | |
| US4040874A (en) | Semiconductor element having a polymeric protective coating and glass coating overlay | |
| US4030948A (en) | Polyimide containing silicones as protective coating on semiconductor device | |
| US4051163A (en) | Polyimide containing silicones | |
| KR100282684B1 (ko) | 산화 실리콘막 형성방법 | |
| KR100282685B1 (ko) | 산화 실리콘막 형성방법 | |
| US3684592A (en) | Passivated surfaces and protective coatings for semiconductor devices and processes for producing the same | |
| JPS63234031A (ja) | ポリイミド−シロキサン、製法と用途 | |
| US4198444A (en) | Method for providing substantially hermetic sealing means for electronic components | |
| JPS584816B2 (ja) | 半導体素子とその製法 | |
| JPH0145493B2 (show.php) | ||
| US4331970A (en) | Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation | |
| US4652598A (en) | Siloxane-containing polymers | |
| JPS6046542B2 (ja) | 半導体素子 | |
| EP0015720B1 (en) | Copolymeric coating compositions | |
| JPH0489827A (ja) | ポリアミド酸共重合体及びその製造方法 | |
| US20050064199A1 (en) | Structure and method for improved adhesion between two polymer films | |
| JPS5835368B2 (ja) | 半導体装置及びその表面被覆組成物 | |
| JP2713051B2 (ja) | ポリアミック酸及びポリイミド樹脂、これらの製造方法並びに半導体装置保護用材料 | |
| JPS6047741B2 (ja) | 被覆用共重合体液と被覆半導体素子 | |
| JPS597213B2 (ja) | ポリイミド−シリコン共重合体接合コ−テングで被覆されたシリコン半導体接合における表面状態と表面電荷の調節法 | |
| JPS5921165B2 (ja) | 半導体素子 | |
| JPS6058582B2 (ja) | 半導体素子のパツシベ−シヨン方法 | |
| JP2979558B2 (ja) | 半導体装置の多層配線層間絶縁膜の形成方法 | |
| KR950000071B1 (ko) | 고내열성 실록산 폴리이미드막의 형성방법 |