JPS5846796B2 - ３トランジスタスタテイツク記憶素子 - Google Patents
３トランジスタスタテイツク記憶素子Info
- Publication number
- JPS5846796B2 JPS5846796B2 JP51049787A JP4978776A JPS5846796B2 JP S5846796 B2 JPS5846796 B2 JP S5846796B2 JP 51049787 A JP51049787 A JP 51049787A JP 4978776 A JP4978776 A JP 4978776A JP S5846796 B2 JPS5846796 B2 JP S5846796B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- terminal
- node
- address
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003068 static effect Effects 0.000 title claims description 9
- 230000005669 field effect Effects 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 101001043821 Homo sapiens Interleukin-31 Proteins 0.000 description 1
- 102100021596 Interleukin-31 Human genes 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2519323A DE2519323C3 (de) | 1975-04-30 | 1975-04-30 | Statisches Drei-Transistoren-Speicherelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51134035A JPS51134035A (en) | 1976-11-20 |
| JPS5846796B2 true JPS5846796B2 (ja) | 1983-10-18 |
Family
ID=5945460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51049787A Expired JPS5846796B2 (ja) | 1975-04-30 | 1976-04-30 | ３トランジスタスタテイツク記憶素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4000427A (enExample) |
| JP (1) | JPS5846796B2 (enExample) |
| DE (1) | DE2519323C3 (enExample) |
| FR (1) | FR2309952A1 (enExample) |
| GB (1) | GB1550471A (enExample) |
| IT (1) | IT1060025B (enExample) |
| NL (1) | NL7604639A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142111A (en) * | 1977-01-27 | 1979-02-27 | Texas Instruments Incorporated | One-transistor fully static semiconductor memory cell |
| US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
| JPS5948567B2 (ja) * | 1979-12-29 | 1984-11-27 | 富士通株式会社 | シュミット・トリガ回路 |
| JPS57183119A (en) * | 1981-05-02 | 1982-11-11 | Sanyo Electric Co Ltd | Schmitt circuit |
| FR2511822A1 (fr) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit |
| US4461963A (en) * | 1982-01-11 | 1984-07-24 | Signetics Corporation | MOS Power-on reset circuit |
| US4687954A (en) * | 1984-03-06 | 1987-08-18 | Kabushiki Kaisha Toshiba | CMOS hysteresis circuit with enable switch or natural transistor |
| US4615828A (en) * | 1984-05-07 | 1986-10-07 | Lockheed Corporation | Method and apparatus for detecting hydrocarbon fuel leaks |
| US5198994A (en) * | 1988-08-31 | 1993-03-30 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
| US6225655B1 (en) | 1996-10-25 | 2001-05-01 | Texas Instruments Incorporated | Ferroelectric transistors using thin film semiconductor gate electrodes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3449727A (en) * | 1965-12-27 | 1969-06-10 | Ibm | Transistor latch memory driven by coincidentally applied oppositely directed pulses |
| FR1473979A (fr) * | 1966-01-07 | 1967-03-24 | Cie Europ D Automatisme Electr | Perfectionnement aux cellules de mémoire |
| US3441912A (en) * | 1966-01-28 | 1969-04-29 | Ibm | Feedback current switch memory cell |
| US3725881A (en) * | 1971-08-25 | 1973-04-03 | Intersil Inc | Two terminal bipolar memory cell |
| DE2252130C2 (de) * | 1972-10-24 | 1978-06-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schmitt-Trigger-Schaltung aus Isolierschicht-Feldeffekttransistoren |
| US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
-
1975
- 1975-04-30 DE DE2519323A patent/DE2519323C3/de not_active Expired
-
1976
- 1976-04-21 US US05/679,089 patent/US4000427A/en not_active Expired - Lifetime
- 1976-04-27 FR FR7612413A patent/FR2309952A1/fr active Granted
- 1976-04-27 IT IT22674/76A patent/IT1060025B/it active
- 1976-04-29 NL NL7604639A patent/NL7604639A/xx not_active Application Discontinuation
- 1976-04-30 GB GB17621/76A patent/GB1550471A/en not_active Expired
- 1976-04-30 JP JP51049787A patent/JPS5846796B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4000427A (en) | 1976-12-28 |
| DE2519323B2 (de) | 1978-11-02 |
| JPS51134035A (en) | 1976-11-20 |
| NL7604639A (nl) | 1976-11-02 |
| GB1550471A (en) | 1979-08-15 |
| DE2519323A1 (de) | 1976-11-04 |
| IT1060025B (it) | 1982-07-10 |
| FR2309952A1 (fr) | 1976-11-26 |
| DE2519323C3 (de) | 1979-07-12 |
| FR2309952B1 (enExample) | 1979-04-13 |
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