FR2309952A1 - Cellule de memoire statique a trois transistors - Google Patents

Cellule de memoire statique a trois transistors

Info

Publication number
FR2309952A1
FR2309952A1 FR7612413A FR7612413A FR2309952A1 FR 2309952 A1 FR2309952 A1 FR 2309952A1 FR 7612413 A FR7612413 A FR 7612413A FR 7612413 A FR7612413 A FR 7612413A FR 2309952 A1 FR2309952 A1 FR 2309952A1
Authority
FR
France
Prior art keywords
memory cell
static memory
transistor static
transistor
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7612413A
Other languages
English (en)
Other versions
FR2309952B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2309952A1 publication Critical patent/FR2309952A1/fr
Application granted granted Critical
Publication of FR2309952B1 publication Critical patent/FR2309952B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
FR7612413A 1975-04-30 1976-04-27 Cellule de memoire statique a trois transistors Granted FR2309952A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2519323A DE2519323C3 (de) 1975-04-30 1975-04-30 Statisches Drei-Transistoren-Speicherelement

Publications (2)

Publication Number Publication Date
FR2309952A1 true FR2309952A1 (fr) 1976-11-26
FR2309952B1 FR2309952B1 (fr) 1979-04-13

Family

ID=5945460

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7612413A Granted FR2309952A1 (fr) 1975-04-30 1976-04-27 Cellule de memoire statique a trois transistors

Country Status (7)

Country Link
US (1) US4000427A (fr)
JP (1) JPS5846796B2 (fr)
DE (1) DE2519323C3 (fr)
FR (1) FR2309952A1 (fr)
GB (1) GB1550471A (fr)
IT (1) IT1060025B (fr)
NL (1) NL7604639A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142111A (en) * 1977-01-27 1979-02-27 Texas Instruments Incorporated One-transistor fully static semiconductor memory cell
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
JPS5948567B2 (ja) * 1979-12-29 1984-11-27 富士通株式会社 シュミット・トリガ回路
JPS57183119A (en) * 1981-05-02 1982-11-11 Sanyo Electric Co Ltd Schmitt circuit
FR2511822A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit
US4461963A (en) * 1982-01-11 1984-07-24 Signetics Corporation MOS Power-on reset circuit
US4687954A (en) * 1984-03-06 1987-08-18 Kabushiki Kaisha Toshiba CMOS hysteresis circuit with enable switch or natural transistor
US4615828A (en) * 1984-05-07 1986-10-07 Lockheed Corporation Method and apparatus for detecting hydrocarbon fuel leaks
US5198994A (en) * 1988-08-31 1993-03-30 Kabushiki Kaisha Toshiba Ferroelectric memory device
US6225655B1 (en) 1996-10-25 2001-05-01 Texas Instruments Incorporated Ferroelectric transistors using thin film semiconductor gate electrodes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1473979A (fr) * 1966-01-07 1967-03-24 Cie Europ D Automatisme Electr Perfectionnement aux cellules de mémoire
US3449727A (en) * 1965-12-27 1969-06-10 Ibm Transistor latch memory driven by coincidentally applied oppositely directed pulses
US3725881A (en) * 1971-08-25 1973-04-03 Intersil Inc Two terminal bipolar memory cell
FR2204079A1 (fr) * 1972-10-24 1974-05-17 Itt

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441912A (en) * 1966-01-28 1969-04-29 Ibm Feedback current switch memory cell
US3870901A (en) * 1973-12-10 1975-03-11 Gen Instrument Corp Method and apparatus for maintaining the charge on a storage node of a mos circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449727A (en) * 1965-12-27 1969-06-10 Ibm Transistor latch memory driven by coincidentally applied oppositely directed pulses
FR1473979A (fr) * 1966-01-07 1967-03-24 Cie Europ D Automatisme Electr Perfectionnement aux cellules de mémoire
US3725881A (en) * 1971-08-25 1973-04-03 Intersil Inc Two terminal bipolar memory cell
FR2204079A1 (fr) * 1972-10-24 1974-05-17 Itt

Also Published As

Publication number Publication date
US4000427A (en) 1976-12-28
DE2519323C3 (de) 1979-07-12
JPS5846796B2 (ja) 1983-10-18
NL7604639A (nl) 1976-11-02
FR2309952B1 (fr) 1979-04-13
GB1550471A (en) 1979-08-15
IT1060025B (it) 1982-07-10
JPS51134035A (en) 1976-11-20
DE2519323A1 (de) 1976-11-04
DE2519323B2 (de) 1978-11-02

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Legal Events

Date Code Title Description
ST Notification of lapse