IT1060025B - Elemento memorizzatore statico a tre transistori - Google Patents
Elemento memorizzatore statico a tre transistoriInfo
- Publication number
- IT1060025B IT1060025B IT22674/76A IT2267476A IT1060025B IT 1060025 B IT1060025 B IT 1060025B IT 22674/76 A IT22674/76 A IT 22674/76A IT 2267476 A IT2267476 A IT 2267476A IT 1060025 B IT1060025 B IT 1060025B
- Authority
- IT
- Italy
- Prior art keywords
- storage element
- static storage
- transistor static
- transistor
- storage
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2519323A DE2519323C3 (de) | 1975-04-30 | 1975-04-30 | Statisches Drei-Transistoren-Speicherelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1060025B true IT1060025B (it) | 1982-07-10 |
Family
ID=5945460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT22674/76A IT1060025B (it) | 1975-04-30 | 1976-04-27 | Elemento memorizzatore statico a tre transistori |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4000427A (enExample) |
| JP (1) | JPS5846796B2 (enExample) |
| DE (1) | DE2519323C3 (enExample) |
| FR (1) | FR2309952A1 (enExample) |
| GB (1) | GB1550471A (enExample) |
| IT (1) | IT1060025B (enExample) |
| NL (1) | NL7604639A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142111A (en) * | 1977-01-27 | 1979-02-27 | Texas Instruments Incorporated | One-transistor fully static semiconductor memory cell |
| US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
| JPS5948567B2 (ja) * | 1979-12-29 | 1984-11-27 | 富士通株式会社 | シュミット・トリガ回路 |
| JPS57183119A (en) * | 1981-05-02 | 1982-11-11 | Sanyo Electric Co Ltd | Schmitt circuit |
| FR2511822A1 (fr) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit |
| US4461963A (en) * | 1982-01-11 | 1984-07-24 | Signetics Corporation | MOS Power-on reset circuit |
| US4687954A (en) * | 1984-03-06 | 1987-08-18 | Kabushiki Kaisha Toshiba | CMOS hysteresis circuit with enable switch or natural transistor |
| US4615828A (en) * | 1984-05-07 | 1986-10-07 | Lockheed Corporation | Method and apparatus for detecting hydrocarbon fuel leaks |
| US5198994A (en) * | 1988-08-31 | 1993-03-30 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
| US6225655B1 (en) | 1996-10-25 | 2001-05-01 | Texas Instruments Incorporated | Ferroelectric transistors using thin film semiconductor gate electrodes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3449727A (en) * | 1965-12-27 | 1969-06-10 | Ibm | Transistor latch memory driven by coincidentally applied oppositely directed pulses |
| FR1473979A (fr) * | 1966-01-07 | 1967-03-24 | Cie Europ D Automatisme Electr | Perfectionnement aux cellules de mémoire |
| US3441912A (en) * | 1966-01-28 | 1969-04-29 | Ibm | Feedback current switch memory cell |
| US3725881A (en) * | 1971-08-25 | 1973-04-03 | Intersil Inc | Two terminal bipolar memory cell |
| DE2252130C2 (de) * | 1972-10-24 | 1978-06-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schmitt-Trigger-Schaltung aus Isolierschicht-Feldeffekttransistoren |
| US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
-
1975
- 1975-04-30 DE DE2519323A patent/DE2519323C3/de not_active Expired
-
1976
- 1976-04-21 US US05/679,089 patent/US4000427A/en not_active Expired - Lifetime
- 1976-04-27 FR FR7612413A patent/FR2309952A1/fr active Granted
- 1976-04-27 IT IT22674/76A patent/IT1060025B/it active
- 1976-04-29 NL NL7604639A patent/NL7604639A/xx not_active Application Discontinuation
- 1976-04-30 GB GB17621/76A patent/GB1550471A/en not_active Expired
- 1976-04-30 JP JP51049787A patent/JPS5846796B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4000427A (en) | 1976-12-28 |
| DE2519323B2 (de) | 1978-11-02 |
| JPS51134035A (en) | 1976-11-20 |
| NL7604639A (nl) | 1976-11-02 |
| GB1550471A (en) | 1979-08-15 |
| DE2519323A1 (de) | 1976-11-04 |
| FR2309952A1 (fr) | 1976-11-26 |
| DE2519323C3 (de) | 1979-07-12 |
| JPS5846796B2 (ja) | 1983-10-18 |
| FR2309952B1 (enExample) | 1979-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT1054083B (it) | Dispositivo di memorizzazione a semiconduttore | |
| BR7602160A (pt) | Aperfeicoamentos em elemento fotografico | |
| MX147443A (es) | Elemento fotografico mejorado | |
| IT1066678B (it) | Rotismo a satelliti | |
| IT1052905B (it) | Distributore dosatore a dispositivo di tenuta | |
| SE7613603L (sv) | Halvledarminne | |
| IT1059124B (it) | Valvola a saracinesca | |
| FR2307747A1 (fr) | Magasin a bobines | |
| ATA87476A (de) | Materiallager | |
| IT1057815B (it) | Memeoria a bolle magnetiche | |
| IT1054279B (it) | Dispositivo a racla | |
| DK251476A (da) | Brandhemmende midler til plastiske materialer | |
| IT1060025B (it) | Elemento memorizzatore statico a tre transistori | |
| FR2319182A1 (fr) | Memoire a semi-conducteurs | |
| FR2308165A1 (fr) | Circuits a semi-conducteurs | |
| BR7603389A (pt) | Elemento fotografico | |
| IT1057752B (it) | Cirsuito rivelatore a transistori | |
| SE402999B (sv) | Minnesanordning | |
| FR2313799A1 (fr) | Inverseur a transistors | |
| DK203176A (da) | Thiazolinforbindelser | |
| BE849552A (fr) | Oscillateur a transistor | |
| SE418812B (sv) | Anordning vid en malapparat for fibrost lignocellulosahaltigt material | |
| IT1034441B (it) | Polisilossani organici induri bili a caldo | |
| SE396853B (sv) | Tvapol innefattande en transistor | |
| IT1057711B (it) | Pagnetron a cavita riscnante |