DE2519323C3 - Statisches Drei-Transistoren-Speicherelement - Google Patents
Statisches Drei-Transistoren-SpeicherelementInfo
- Publication number
- DE2519323C3 DE2519323C3 DE2519323A DE2519323A DE2519323C3 DE 2519323 C3 DE2519323 C3 DE 2519323C3 DE 2519323 A DE2519323 A DE 2519323A DE 2519323 A DE2519323 A DE 2519323A DE 2519323 C3 DE2519323 C3 DE 2519323C3
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- connection
- node
- load element
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 15
- 230000003068 static effect Effects 0.000 title claims description 15
- 230000005669 field effect Effects 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2519323A DE2519323C3 (de) | 1975-04-30 | 1975-04-30 | Statisches Drei-Transistoren-Speicherelement |
| US05/679,089 US4000427A (en) | 1975-04-30 | 1976-04-21 | Static three-transistor-storage element |
| FR7612413A FR2309952A1 (fr) | 1975-04-30 | 1976-04-27 | Cellule de memoire statique a trois transistors |
| IT22674/76A IT1060025B (it) | 1975-04-30 | 1976-04-27 | Elemento memorizzatore statico a tre transistori |
| NL7604639A NL7604639A (nl) | 1975-04-30 | 1976-04-29 | Statisch uit drie transistoren bestaand geheugenelement. |
| GB17621/76A GB1550471A (en) | 1975-04-30 | 1976-04-30 | Static binary data storage elements |
| JP51049787A JPS5846796B2 (ja) | 1975-04-30 | 1976-04-30 | ３トランジスタスタテイツク記憶素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2519323A DE2519323C3 (de) | 1975-04-30 | 1975-04-30 | Statisches Drei-Transistoren-Speicherelement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2519323A1 DE2519323A1 (de) | 1976-11-04 |
| DE2519323B2 DE2519323B2 (de) | 1978-11-02 |
| DE2519323C3 true DE2519323C3 (de) | 1979-07-12 |
Family
ID=5945460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2519323A Expired DE2519323C3 (de) | 1975-04-30 | 1975-04-30 | Statisches Drei-Transistoren-Speicherelement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4000427A (enExample) |
| JP (1) | JPS5846796B2 (enExample) |
| DE (1) | DE2519323C3 (enExample) |
| FR (1) | FR2309952A1 (enExample) |
| GB (1) | GB1550471A (enExample) |
| IT (1) | IT1060025B (enExample) |
| NL (1) | NL7604639A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142111A (en) * | 1977-01-27 | 1979-02-27 | Texas Instruments Incorporated | One-transistor fully static semiconductor memory cell |
| US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
| JPS5948567B2 (ja) * | 1979-12-29 | 1984-11-27 | 富士通株式会社 | シュミット・トリガ回路 |
| JPS57183119A (en) * | 1981-05-02 | 1982-11-11 | Sanyo Electric Co Ltd | Schmitt circuit |
| FR2511822A1 (fr) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit |
| US4461963A (en) * | 1982-01-11 | 1984-07-24 | Signetics Corporation | MOS Power-on reset circuit |
| US4687954A (en) * | 1984-03-06 | 1987-08-18 | Kabushiki Kaisha Toshiba | CMOS hysteresis circuit with enable switch or natural transistor |
| US4615828A (en) * | 1984-05-07 | 1986-10-07 | Lockheed Corporation | Method and apparatus for detecting hydrocarbon fuel leaks |
| US5198994A (en) * | 1988-08-31 | 1993-03-30 | Kabushiki Kaisha Toshiba | Ferroelectric memory device |
| US6225655B1 (en) | 1996-10-25 | 2001-05-01 | Texas Instruments Incorporated | Ferroelectric transistors using thin film semiconductor gate electrodes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3449727A (en) * | 1965-12-27 | 1969-06-10 | Ibm | Transistor latch memory driven by coincidentally applied oppositely directed pulses |
| FR1473979A (fr) * | 1966-01-07 | 1967-03-24 | Cie Europ D Automatisme Electr | Perfectionnement aux cellules de mémoire |
| US3441912A (en) * | 1966-01-28 | 1969-04-29 | Ibm | Feedback current switch memory cell |
| US3725881A (en) * | 1971-08-25 | 1973-04-03 | Intersil Inc | Two terminal bipolar memory cell |
| DE2252130C2 (de) * | 1972-10-24 | 1978-06-08 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schmitt-Trigger-Schaltung aus Isolierschicht-Feldeffekttransistoren |
| US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
-
1975
- 1975-04-30 DE DE2519323A patent/DE2519323C3/de not_active Expired
-
1976
- 1976-04-21 US US05/679,089 patent/US4000427A/en not_active Expired - Lifetime
- 1976-04-27 FR FR7612413A patent/FR2309952A1/fr active Granted
- 1976-04-27 IT IT22674/76A patent/IT1060025B/it active
- 1976-04-29 NL NL7604639A patent/NL7604639A/xx not_active Application Discontinuation
- 1976-04-30 GB GB17621/76A patent/GB1550471A/en not_active Expired
- 1976-04-30 JP JP51049787A patent/JPS5846796B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4000427A (en) | 1976-12-28 |
| DE2519323B2 (de) | 1978-11-02 |
| JPS51134035A (en) | 1976-11-20 |
| NL7604639A (nl) | 1976-11-02 |
| GB1550471A (en) | 1979-08-15 |
| DE2519323A1 (de) | 1976-11-04 |
| IT1060025B (it) | 1982-07-10 |
| FR2309952A1 (fr) | 1976-11-26 |
| JPS5846796B2 (ja) | 1983-10-18 |
| FR2309952B1 (enExample) | 1979-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |